IRFNJZ48 semelab plc. telephone +44(0)1455) 556565. fax +44(0)1455) 552612. e-mail: sales@semelab.co.uk website http://www.semelab.co.uk document number 5610 issue 1 v gs gate ? source voltage i d* continuous drain current @ t case = 25c i d* continuous drain current @ t case = 100c i dm pulsed drain current p d power dissipation @ t case = 25c linear derating factor t j , t stg operating and storage temperature range r jc thermal resistance junction to case 20v 22a 22a 88a 75w 0.6 w/c ?55 to 150c 1.67c/w max. mechanical data dimensions in mm (inches) 2 1 3 2.41 (0.095) (0.030) min. 3.05 (0.120) 5.72 (.225) 0.127 (0.005) (0.296) 10.16 (0.400) 0.76 (0.030) min. 3.175 (0.125) max. 0.50 (0.020) max. 7.54 0.76 2.41 (0.095) 0.127 (0.005) (0.286) 7.26 16 plcs 0.50(0.020) 0.127 (0.005) absolute maximum ratings (t case = 25 c unless otherwise stated) smd05 (to-276aa) n?channel power mosfet for hi?rel applications features hermetically sealed simple drive requirements lightweight screening options available v dss 55v i d(cont) 22a r ds(on) 0.016 ? ? pad1 = source pad 2 = drain pad3 = gate semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
semelab plc. telephone +44(0)1455) 556565. fax +44(0)1455) 552612. e-mail: sales@semelab.co.uk website http://www.semelab.co.uk parameter test conditions min. typ. max. unit v gs = 0 i d = 250 a reference to 25 c i d = 1ma v gs = 10v i d = 22a v ds = v gs i d = 250 a v ds 25v i ds = 22a v ds = 55v v gs = 0 v ds = 44v t j = 125 c v gs = 20v v gs = -20v v gs = 0 v ds = 25v f = 1mhz v gs = 10v v ds = 44v i d = 22a v dd = 28v i d = 22a r g = 5.1 ? i s = 22a t j = 25 c v gs = 0 i f = 16a t j = 25 c d i / d t 100a/ sv dd 30v electrical characteristics (t c = 25 c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on ? state resistance gate threshold voltage forward transconductance zero gate voltage drain current v gs = 0 forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain ( ? miller ? ) charge turn ? on delay time rise time turn ? off delay time fall time continuous source current pulse source current diode forward voltage reverse recovery time reverse recovery charge 55 0.056 0.016 24 22 25 250 100 -100 1900 620 270 101 19 41 23 141 60 98 22* 88 1.3 104 210 v v/ c ? v s ( ? a na pf nc ns a v ns nc bv dss ? bv dss ? t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr static electrical ratings dynamic characteristics source ? drain diode characteristics ( ? ) semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 5610 issue 1 IRFNJZ48 * current limited by package
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