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savantic semiconductor product specification silicon npn power transistors 2SD772 2SD772a 2SD772b description with t o-220c package high breakdown voltage high speed switching applications for power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SD772 150 2SD772a 200 v cbo collector-base voltage 2SD772b open emitter 250 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 5 a i cm collector current-peak 10 a p c collector dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -50~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD772 2SD772a 2SD772b characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a; l=25mh 80 v v cesat collector-emitter saturation voltage i c =5a; i b =1a 1.6 v v be base-emitter on voltage i c =5a ; v ce =4v 1.5 v 2SD772 v cb =150v; i e =0 2SD772a v cb =200v; i e =0 i cbo collector cut-off current 2SD772b v cb =250v; i e =0 1.0 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe dc current gain i c =5a ; v ce =4v 14 t f fall time i c =5a ; v eb =-5v, i b1 =0.8a 1 s f t transition frequency i c =0.5a ; v ce =10v 40 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2SD772 2SD772a 2SD772b package outline fig.2 outline dimensions (unindicated tolerance:0.10mm)

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