? 2008 ixys all rights reserved - 4 200808a ixer 20n120 ixer 20n120d1 ixys reserves the right to change limits, test conditions and dimensions. npt 3 igbt in isoplus247? features ? npt 3 igbt - low saturation voltage - positive temperature coeffcient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits ? hiperfred? diode - fast reverse recovery - low operating forward voltage - low leakage current ? isoplus247? package - isolated back surface - low coupling capacity between pins and heatsink - high reliability - industry standard outline applications ? single switches ? choppers with complementary free wheeling diodes ? phaselegs, h bridges, three phase bridges e.g. for - power supplies, ups - ac, dc and sr drives - induction heating i c25 = 36 a v ces = 1200 v v ce(sat)typ = 2.4 v isoplus247? isolated backside ? e c g c g e c g e ixer 20n20d ixer 20n20 igbt symbol conditions maximum ratings v ces t vj = 25c to 50c 200 v v ges 20 v i c25 i c90 t c = 25c t c = 90c 29 9 a a i cm v cek v ge = 5 v; r g = 68 w ; t vj = 25c rbsoa clamped inductive load; l = 00 h 40 v ces a t sc (scsoa) v ce = 900 v; v ge = 5 v; r g = 68 w t vj = 25c; non-repetitive 0 s p tot t c = 25c 30 w symbol conditions characteristic values (t vj = 25c, unless otherwise specifed) min. typ. max. v ce(sat) i c = 20 a; v ge = 5 v; t vj = 25c t vj = 25c 2.4 2.8 2.8 v v v ge(th) i c = 0.6 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ; v ge = 0 v; t vj = 25c t vj = 25c 0.2 0.2 ma ma i ges v ce = 0 v; v ge = 20 v 200 na t d(on) t r t d(off) t f e on e off inductive load l = 00 h; t vj = 25c v ce = 600 v; i c = 25 a v ge = 5 v; r g = 68 w 205 05 320 75 4. .5 ns ns ns ns mj mj c ies q gon v ce = 25 v; v ge = 0 v; f = mhz v ce = 600 v; v ge = 5 v; i c = 20 a .2 00 nf nc r thjc r thch with heatsink compound 0.5 0.96 k/w k/w g = gate c = collector e = emitter p h a s e - o u t
? 2008 ixys all rights reserved 2 - 4 200808a ixer 20n120 ixer 20n120d1 ixys reserves the right to change limits, test conditions and dimensions. diode [d version only] symbol conditions maximum ratings i f25 i f90 t c = 25c t c = 90c 25 5 a a symbol conditions characteristic values min. typ. max. v f i f = 20 a; v ge = 0 v; t vj = 25c t vj = 25c 2.6 2.0 3.0 v v i rm t rr v r = 600 v; l = 00 h; t vj = 25c di f /dt = -400a/s; i f = 5 a; v ge = 0 v 6 30 a ns r thjc r thch with heatsink compound 2.3 .3 k/w symbol conditions characteristic values min. typ. max. c p coupling capacity between shorted pins and mounting tab in the case 30 pf weight 6 g module symbol conditions maximum ratings t vj t stg -55...+50 -55...+50 c c v isol i isol < ma; 50/60 hz 2500 v~ f c mounting force with clip 20... 20 n isoplus247? outline die konvexe form des substrates ist typ. < 0.04 mm ber der kunststoff-f- oberfl?che der bauteilunterseite the convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side die geh?useabmessungen entsprechen dem typ to-247 ad gem?? jedec au?er schraubloch und l max . this drawing will meet all dimensions requiarement of jedec outline to-247 ad except screw hole and except l max . p h a s e - o u t
? 2008 ixys all rights reserved 3 - 4 200808a ixer 20n120 ixer 20n120d1 ixys reserves the right to change limits, test conditions and dimensions. 0 200 400 600 800 1000 0 10 20 30 40 0 50 100 150 200 0 1 2 3 4 5 6 0 20 40 60 80 0 20 40 60 80 100 0 3 6 9 12 15 0 1 2 3 4 5 6 0 10 20 30 40 50 60 v ce [v] i c [a] -di/dt [a/s] i rm [a] t rr [ns] fii30-12e i rm t rr 9 v 11 v 11 v 0 5 10 15 20 0 20 40 60 80 0 1 2 3 4 0 10 20 30 40 50 i f [a] 9 v 13 v 13 v 15 v t vj = 25c t vj = 125c v ce = 20 v t vj = 125c t vj = 25c t vj = 125c v r = 600 v i f = 15 a t vj = 25c v ge = 17 v v ge = 17 v t vj = 125c v ce = 600 v i c = 20 a 15 v v ce [v] i c [a] v ge [v] i c [a] v f [v] v ge [v] q g [nc] fig. typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. forward characteristics of free wheeling diode fig. 5 typ. turn on gate charge fig. 6 typ. turn off characteristics of free wheeling diode p h a s e - o u t
? 2008 ixys all rights reserved 4 - 4 200808a ixer 20n120 ixer 20n120d1 ixys reserves the right to change limits, test conditions and dimensions. 0 10 20 30 40 0 4 8 12 16 20 0 50 100 150 200 250 0 10 20 30 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250 300 350 400 0.001 0.01 0.1 1 10 0.1 1 10 0 50 100 150 200 250 0.0 0.5 1.0 1.5 2.0 2.5 0 250 500 750 1000 1250 0 50 100 150 200 250 0 2 4 6 8 10 0 200 400 600 800 1000 1200 1400 0 10 20 30 40 50 e off t d(off) t f e on t r e off t d(off) t f i c [a] a e off [mj] e on [mj] t [ns] r g [ : ] v ce [v] t [ms] i cm [a] z thjh [k/w] t d(on) v ce = 600 v v ge = 15 v i c = 20 a t vj = 125c v ce = 600 v v ge = 15 v i c = 20 a t vj = 125c v ce = 600 v v ge = 15 v r g = 68 : t vj = 125c v ce = 600 v v ge = 15 v r g = 68 : t vj = 125c r g = 68 : t vj = 125c igbt diode i c [a] t [ns] e off [mj] t [ns] e on [mj] r g [ : ] fig. 7 typ. turn on energy and switching times versus collector current fig. 8 typ. turn off energy and switching times versus collector current fig. 9 typ. turn on energy vs gate resistor fig.0 typ. turn off energy and switching times versus gate resistor fig. reverse biased safe operating area rbsoa fig. 2 typ. transient thermal impedance igbt diode r i i r i i 0. 93 0.0060 0.497 0.00 782 2 0.57 0.022 .4 9 0.043 3 0.059 2. 92 0.72 0. 96 4 0.634 0. 34 0.945 0.0 r1 r2 r3 r4 c1 c2 c3 c4 i r i c i ?= zth t( ) 1 n i r i 1 exp t i ? ? ? ? ? ? ? ? = = ? ? thermal analysis model p h a s e - o u t
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