1999. 11. 16 1/3 semiconductor technical data KTD1047 triple diffused npn transistor revision no : 1 high power amplifier application. features complementary to ktb817. recommended for 60w audio frequency amplifier output stage. maximum rating (ta=25 1 ) 1. base 2. collector (heat sink) 3. emitter to-3p(n) c g l k h a d b e f i d p pt m j q 123 a 15.9 max millimeters dim b 4.8 max c 20.0 0.3 d 2.0 0.3 d 1.0+0.3/-0.25 e2.0 f1.0 g 3.3 max h9.0 i4.5 j 2.0 k 1.8 max l 20.5 0.5 p 5.45 0.2 q 3.2 0.2 t 0.6+0.3/-0.1 2.8 m + _ + _ + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe (1) classification o:60 120, y:100 200 characteristic symbol rating unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 140 v emitter-base voltage v ebo 6 v collector current dc i c 12 a pulse i cp 15 collector power dissipation (tc=25 1 ) p c 100 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =80v, i e =0 - - 0.1 ma emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 ma dc current gain h fe (1) (note) v ce =5v, i c =1a 60 - 200 h fe 2 v ce =5v, i c =6a 20 - collector-emitter saturation voltage v ce(sat) i c =5a, i b =0.5a - - 2.5 v base-emitter voltage v be(on) v ce =5v, i c =1a - - 1.5 v transition frequency f t v ce =5v, i c =1a - 15 - mhz output capacitance c ob v cb =10v, i e =0, f=1mhz - 210 - pf turn on time t on v cc =20v i c =1a=10 i b1 =-10 i b2 r l =20 u - 0.26 - s fall time t f - 0.68 - storage time t stg - 6.88 -
1999. 11. 16 2/3 KTD1047 revision no : 1 0 c base-emitter voltage v (v) i - v collector current i (a) be 0 i - v cce ce collector emitter voltage v (v) 0 c 0 collector current i (a) 2 v - i be(sat) c c collector current i (a) 0.1 0.3 3 1 0.1 be(sat) base-emitter saturation dc current h 1 fe 3 1 0.3 0.1 collector current i (a) c c fe h - i transition frequency f (mhz) 1 t 13 0.3 0.1 collector current i (a) c c t f - i 10 20 30 40 50 4 6 8 10 240ma 200ma 160ma 120ma 80ma 40ma 20ma i =0 b collector current i (a) v - i ce(sat) c collector-emitter voltage 0.1 0.01 0.3 1 c 10 30 100 3 5 10 30 50 100 300 500 1k v (v) 35 10 0.03 0.05 0.1 0.3 0.5 1 3 5 10 v =5v ce i /i =10 c b ce(sat) voltage v (v) 10 0.3 0.5 1 3 5 10 i /i =10 c b be c 0.4 0.8 1.2 1.6 1 2 3 4 5 6 7 8 v =5v ce 10 3 5 10 30 50 100 v =5v ce 0.5 0.5 5 0.5 5
1999. 11. 16 3/3 KTD1047 revision no : 1 collector current i (a) c 0.1 30 10 3 1 collector-emitter voltage v (v) ce safe operating area collector-base voltage v (v) c (pf) 1 ob 10 3 3 0 100 c - v ob cb cb 10 30 50 100 300 500 1k f=1mhz 100 300 1 k 0.3 0.5 1 3 5 10 30 50 100 1ms 10ms 100m s dc collector output capacitance
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