? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 250 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 250 v v gsm 20 v i d25 t c = 25 c42a i dm t c = 25 c, pulse width limited by t jm 110 a i ar t c = 25 c50a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c to-263 package for 10s m d mounting torque (to-3p / to-220) 1.13/10 nm/lb.in. weight to-3p 5.5 g to-220 4 g to-263 3 g g = gate d = drain s = source tab = drain ds99157a(05/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 250 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 70 84 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm power mosfet advanced technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density polarht tm dmos transistors utilize proprietary designs and process. us patent is pending. to-3p (ixtq) to-263 (i xta ) to-220 (i xtp ) g d s (tab) d (tab) g s g s (tab) ixtq 42n25p ixta 42n25p ixtp 42n25p v dss = 250 v i d25 = 42 a r ds(on) = 84 m ? ? ? ? ?
ixys reserves the right to change limits, test conditions, and dimensions. ixta 42n25p ixtp 42n25p ixtq 42n25p ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 12 20 s c iss 2300 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 430 pf c rss 115 pf t d(on) 24 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 28 ns t d(off) r g = 10 ? (external) 81 ns t f 30 ns q g(on) 70 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 17 nc q gd 37 nc r thjc 0.42 k/w r thck (to-3p) 0.21 k/w (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 42 a i sm repetitive 110 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 200 ns -di/dt = 100 a/ s q rm v r = 100 v 2.0 c to-3p (ixtq) outline pins: 1 - gate 2 - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline
? 2004 ixys all rights reserved ixta 42n25p ixtp 42n25p ixtq 42n25p fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 110 0369121518212427 v d s - volts i d - amperes v gs = 10v 7v 6v 5v 8v 9v fig. 3. output characteristics @ 125 o c 0 5 10 15 20 25 30 35 40 45 0123456789 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 00.511.522.533.54 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50-25 0 255075100125150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 42a i d = 21a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 4.2 4.6 0 102030405060708090100110 i d - amperes r d s ( o n ) - normalize d t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixta 42n25p ixtp 42n25p ixtq 42n25p ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070 q g - nanocoulombs v g s - volts v ds = 125v i d = 21a i g = 10ma fig. 7. input admittance 0 10 20 30 40 50 60 70 44.5 55.5 66.5 77.5 88.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 30 0 102030405060708090 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 15 30 45 60 75 90 105 120 0.4 0.6 0.8 1 1.2 1.4 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25s
? 2004 ixys all rights reserved ixta 42n25p ixtp 42n25p ixtq 42n25p fig. 13. m axim um trans ie nt the rm al re s is tance 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 1 10 100 1000 pu ls e w id th - m illis e c o n d s r ( t h ) j c - o c / w
|
