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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. may 2009 doc id 15696 rev 1 1/13 13 STD5N95K3, stf5n95k3 stp5n95k3, stu5n95k3 n-channel 950 v, 2.5 ? , 3.5 a, dpak, to-220, to-220fp, ipak supermesh3? power mosfet features 100% avalanche tested extremely large avalanche performance gate charge minimized very low intrinsic capacitances zener-protected application switching applications description the new supermesh3? series of power mosfets is the result of the fine-tuning of st's well-established strip-based powermesh? layout with a new optimized vertical structure. the innovative design offer significantly reduced on- resistance, exceptional dynamic performance and very large avalanche capab ility, making the device suitable for the most demanding applications. figure 1. internal schematic diagram type v dss r ds(on) max i d p w STD5N95K3 950 v < 3 ? 3.5 a 90 w stf5n95k3 950 v < 3 ? 3.5 a 25 w stp5n95k3 950 v < 3 ? 3.5 a 90 w stu5n95k3 950 v < 3 ? 3.5 a 90 w 1 2 3 to-220 ipak to-220fp 1 2 3 3 2 1 dpak 1 3 d(2) g(1) s(3) am01476v1 table 1. device summary order code marking package packaging STD5N95K3 5n95k3 dpak tape and reel stf5n95k3 5n95k3 to-220fp tube stp5n95k3 5n95k3 to-220 tube stu5n95k3 5n95k3 ipak tube www.st.com
contents STD5N95K3, stf5n95k 3, stp5n95k3, stu5n95k3 2/13 doc id 15696 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD5N95K3, stf5n95k3, stp5n95k3, stu5n95k3 electrical ratings doc id 15696 rev 1 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-220fp ipak dpak v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 3.5 3.5 (1) 1. limited only by maximu m temperature allowed 3.5 a i d drain current (continuous) at t c = 100 c 2.2 2.2 (1) 2.2 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 14 14 (1) 14 a p tot total dissipation at t c = 25 c 90 25 90 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 4.4 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) tbd mj dv/dt (3) 3. i sd 3.5 a, di/dt 100 a/s, peak v ds v (br)dss peak diode recovery voltage slope 6 v/ns v iso insulation withstand voltage (ac) 2500 t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit to-220 to-220fp ipak dpak r thj-case thermal resistance junction-case max 1.39 5 1.39 c/w r thj-amb thermal resistance junction-ambient max 62.50 c/w r thj-pcb thermal resistance junction-pcb max 50 c/w t j maximum lead temperature for soldering purpose 300 c/w
electrical characteristics STD5N95K3, stf5n95k3, stp5n95k3, stu5n95k3 4/13 doc id 15696 rev 1 2 electrical characteristics (tcase =25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v; v ds =0 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 1.75 a 2.5 3 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 1.75 a - tbd - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 455 48 1 - pf pf pf c o(tr) (2) 2. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 760 v, v gs = 0 - tbd - pf c o(er) (3) 3. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related v ds = 0 to 760 v, v gs = 0 - tbd - pf r g gate input resistance f=1 mhz open drain - 4.5 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 760 v, i d = 3.5 a, v gs = 10 v (see figure 3) - 13 tbd tbd - nc nc nc
STD5N95K3, stf5n95k3, stp5n95k3, stu5n95k3 electrical characteristics doc id 15696 rev 1 5/13 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make th em safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 475 v, i d = 1.75 a, r g = 4.7 ?, v gs = 10 v (see figure 2) - tbd tbd tbd tbd - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 3.5 14 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 3.5 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3.5 a, di/dt = 100 a/s v dd = 60 v (see figure 4) - tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3.5 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 4) - tbd tbd tbd ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 - - v
test circuits STD5N95K3, stf5 n95k3, stp5n95k3, stu5n95k3 6/13 doc id 15696 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STD5N95K3, stf5n95k3, stp5n95k3, stu5n95k3 package mechanical data doc id 15696 rev 1 7/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STD5N95K3, stf5n95k3, stp5n95k3, stu5n95k3 8/13 doc id 15696 rev 1 dim. mm. . x a m p y t . n i m 0 4 . 2 0 2 . 2 a 0 1 . 1 0 9 . 0 1 a 3 2 . 0 3 0 . 0 2 a 0 9 . 0 4 6 . 0 b 0 4 . 5 0 2 . 5 4 b 0 6 . 0 5 4 . 0 c 0 6 . 0 8 4 . 0 2 c 0 2 . 6 0 0 . 6 d 0 1 . 5 1 d 0 6 . 6 0 4 . 6 e 0 7 . 4 1 e 8 2 . 2 e 0 6 . 4 0 4 . 4 1 e 0 1 . 0 1 5 3 . 9 h 1 l 0 8 . 2 1 l 0 8 . 0 2 l 1 0 6 . 0 4 l 0 2 . 0 r v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
STD5N95K3, stf5n95k3, stp5n95k3, stu5n95k3 package mechanical data doc id 15696 rev 1 9/13 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
package mechanical data STD5N95K3, stf5n95k3, stp5n95k3, stu5n95k3 10/13 doc id 15696 rev 1 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.019 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 3 9 3 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 .9 3 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 .90 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q 2.65 2.95 0.104 0.116
STD5N95K3, stf5n95k3, stp5n95k3, stu5n95k3 package mechanical data doc id 15696 rev 1 11/13 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 b 0.64 0. 9 0 b 2 0. 9 5 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 e 6.40 6.60 e2.2 8 e1 4.40 4.60 h 16.10 l 9 .00 9 .40 (l1) 0. 8 01.20 l2 0. 8 0 v1 10 o to-251 (ipak) mechanical data 006 8 771_h
revision history STD5N95K3, stf5n95k3, stp5n95k3, stu5n95k3 12/13 doc id 15696 rev 1 5 revision history table 9. document revision history date revision changes 12-may-2009 1 first release
STD5N95K3, stf5n95k3, stp5n95k3, stu5n95k3 doc id 15696 rev 1 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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