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CMKD6263DO SURFACE MOUNT DUAL OPPOSING HIGH VOLTAGE SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6263DO contains two (2) galvanically isolated, high voltage, low VF Silicon Schottky diodes with an opposing Anode/ Cathode configuration, epoxy molded in a SOT-363 surface mount package. This ULTRAminiTM device has been designed for fast switching applications requiring a low forward voltage drop. MARKING CODE: 63D SOT-363 CASE FEATURES: * Dual Opposing (DO) Schottky Diodes * High Voltage (70V) MAXIMUM RATINGS: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance * Low Forward Voltage * Galvanically Isolated SYMBOL VRRM IF IFSM PD TJ, Tstg JA 70 15 50 250 -65 to +150 500 UNITS V mA mA mW C C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR BVR VF CT trr VR=50V IR=10A IF=1.0mA VR=0, f=1.0MHz IR=IF=10mA, Irr=1.0mA, RL=100 70 395 410 2.0 5.0 98 200 UNITS nA V mV pF ns R3 (13-January 2010) CMKD6263DO SURFACE MOUNT DUAL OPPOSING HIGH VOLTAGE SILICON SCHOTTKY DIODES SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) NC 3) Cathode D2 4) Anode D2 5) NC 6) Cathode D1 MARKING CODE: 63D R3 (13-January 2010) w w w. c e n t r a l s e m i . c o m |
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