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| ( DataSheet : www..com ) www..com STP10NK80ZFP STP10NK80Z - STW10NK80Z N-CHANNEL 800V - 0.78 - 9A - TO-220/FP-TO-247 Zener-Protected SuperMESHTM MOSFET General features Type VDSS RDS(on) ID 9A 9A 9A Pw 160 W 160 W 40 W STW10NK80Z 800 V <0.90 STP10NK80Z 800 V <0.90 STP10NK80ZFP 800 V <0.90 s s s s s Package 3 1 2 1 3 2 TO-220 TO-220FP EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEABILITY 3 2 1 TO-247 Internal schematic diagram Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Applications s s s HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE Order codes Sales Type STP10NK80Z STP10NK80ZFP STW10NK80Z Marking P10NK80Z P10NK80ZFP W10NK80Z Package TO-220 TO-220FP TO-247 Packaging TUBE TUBE TUBE August 2005 Rev 2 1/14 www.st.com 14 www..com www..com www..com 1 Electrical ratings STP10NK80ZFP - STP10NK80Z - STW10NK80Z 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Value TO-220/ TO-247 VDS VDGR VGS ID ID Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor 9 6 36 160 1.28 4 4.5 --55 to 150 2500 800 800 30 9 (Note 1) 6 (Note 1) 36 (Note 1) 40 0.32 TO-220FP V V V A A A W W/C KV V/ns V C Unit Symbol IDM Note 2 PTOT Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5k) dv/dt Note 3 Peak Diode Recovery voltage slope VISO Tj Tstg Insulation Withstand Volatge (DC) Operating Junction Temperature Storage Temperature Table 2. Thermal data TO-220 TO-220FP 3.1 62.5 300 TO-247 0.78 50 Unit C/W C/W C Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-amb Max Maximum Lead Temperature For Soldering Purpose 0.78 Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj=25C, ID=IAR, VDD = 50V) Max Value 9 290 Unit A mJ 2/14 www..com STP10NK80ZFP - STP10NK80Z - STW10NK80Z 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS On/off states Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Test Conditions ID = 1 mA, VGS= 0 VDS = Max Rating, VDS = Max Rating,Tc=125C VGS = 20 V VDS= VGS, ID = 100 A VGS= 10 V, ID= 4.5 A 3 3.75 0.78 Min. 800 1 50 10 Typ. Max. Unit V A A A V IGSS VGS(th) RDS(on) 4.5 0.9 Table 5. Symbol gfs Note 4 Ciss Coss Crss Coss eq. Note 5 Qg Qgs Qgd Dynamic Parameter Forward Transconductance Test Conditions VDS =15V, ID = 4.5 A Min. Typ. 9.6 2180 205 38 105 72 12.5 37 101 Max. Unit S pF pF pF pF nC nC nC Input Capacitance VDS =25V, f=1 MHz, V GS=0 Output Capacitance Reverse Transfer Capacitance Equivalent Ouput Capacitance VGS=0, VDS =0V to 640V Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=640V, ID = 9A VGS =10V (see Figure 19) Table 6. Symbol td(on) tr td(off) tf tr(Voff) tf tc Switching times Parameter Turn-on Delay Time Rise Time Test Conditions VDD=400 V, ID=4.5A, RG=4.7, VGS=10V (see Figure 20) VDD=400 V, ID=4.5A, RG=4.7, VGS=10V (see Figure 20) VDD=640 V, ID=9A, RG=4.7, VGS=10V (see Figure 20) Min. Typ. 30 20 Max. Unit ns ns Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time 65 17 13 10 25 ns ns ns ns ns 3/14 www..com 2 Electrical characteristics STP10NK80ZFP - STP10NK80Z - STW10NK80Z Table 7. Symbol BVGSO Note 6 Gate-source zener diode Parameter Gate-Source Breakdown Voltage Test Conditions Igs=1mA (Open Drain) Min. 30 Typ. Max. Unit V Table 8. Symbol ISD ISDMNote 2 VSDNote 4 trr Qrr IRRM Source drain diode Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=9 A, VGS=0 ISD=9A, di/dt = 100A/s, VDD=45 V, Tj=150C 645 6.4 20 Test Conditions Min. Typ. Max. 9 36 1.6 Unit A A V ns C A (1)Limited only by maximum temperature allowed (2) Pulse width limited by safe operating area (3) ISD 9A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX (4) Pulsed: pulse duration = 300s, duty cycle 1.5% (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% (6) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 www..com STP10NK80ZFP - STP10NK80Z - STW10NK80Z 2 Electrical characteristics 2.1 Electrical characteristics (curves) Safe Operating Area for TO-220 Figure 2. Thermal Impedanc for TO-220 Figure 1. Figure 3. Safe Operating Area for TO-220FP Figure 4. Thermal Impedance for TO-220FP Figure 5. Safe Operating Area for TO-247 Figure 6. Thermal Impedance for TO-247 5/14 www..com 2 Electrical characteristics STP10NK80ZFP - STP10NK80Z - STW10NK80Z Figure 8. Transfer Characteristics Figure 7. Output Characteristics Figure 9. Transconductance Figure 10. Static Drain-Source on Resistance Figure 11. Gate Charge vs Gate -Source Voltage Figure 12. Capacitance Variations 6/14 www..com STP10NK80ZFP - STP10NK80Z - STW10NK80Z 2 Electrical characteristics Figure 13. Normalized Gate Threshold Voltage Figure 14. Normalized on Resistance vs vs Temperatute Temperature Figure 15. Source-drain Diode Forward Characteristics Figure 16. Normalized BVDSS vs Temperature Figure 17. Maximum Avalanche Energy vs Temperature 7/14 www..com 3 Test circuits STP10NK80ZFP - STP10NK80Z - STW10NK80Z 3 Test circuits Figure 19. Gate Charge Test Circuit Figure 18. Switching Times Test Circuit For Resistive Load Figure 20. Test Circuit For Inductive Load Switching and Diode Recovery Times 8/14 www..com STP10NK80ZFP - STP10NK80Z - STW10NK80Z 4 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 www..com 4 Package mechanical data STP10NK80ZFP - STP10NK80Z - STW10NK80Z TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 10/14 www..com STP10NK80ZFP - STP10NK80Z - STW10NK80Z 4 Package mechanical data TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 11/14 www..com 4 Package mechanical data STP10NK80ZFP - STP10NK80Z - STW10NK80Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/14 www..com STP10NK80ZFP - STP10NK80Z - STW10NK80Z 5 Revision History 5 Revision History Date 30-Aug-2005 Revision 2 Changes Inserted new package (DPAK) 13/14 www..com 5 Revision History STP10NK80ZFP - STP10NK80Z - STW10NK80Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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