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Features * * * * * * 35 dBm Output Power in CW Mode High Power Added Efficiency (PAE) Single Supply Operation (No Negative Rail) Simple Analog Power Ramp Control Low Current Consumption in Power-down Mode (Typically 15 mA) Small SMD Package (PSSOP28 with Heat Slug) Applications * * * * Professional Phones Hands-free Sets ISM Band Application Wireless Infrastructure Pre-amplifiers Description The ATR0906 is a monolithic integrated power amplifier IC manufactured with Atmel's Silicon-Germanium (SiGe) process. Due to its open architecture it can be used either as a two or three-stage amplifier. Every stage can be matched individually which allows applications in a wide frequency range. The ATR0906 can be used from 600 MHz up to 1 GHz in both linear and non-linear (saturated) mode. The analog control input sets dynamically the power gain (either for every single stage or the entire power amplifier).Constant gain mode is also possible. The ATR0906 is suited for the CW mode up to 35 dBm. All these features, including wide power ramp control, makes the ATR0906 a very flexible power amplifier serving many different applications. In addition to phones, the application range includes car identification systems and various wireless communication systems. The single supply voltage operation at +3.5 V and a negligible leakage current in power-down mode allow to significantly simplify the power management of the application. Figure 1. Block Diagram Vctl1 Generalpurpose VHF/UHF Power Amplifier (600 - 1000 MHz) ATR0906 Preliminary 13 Gain1 16 Vctl2 14 Gain2 17 Vctl3 Gain3 15 18 19 Vbias3 BGout Vctl Vcc_ctl 11 12 10 BG Buf1 Buf2 Buf3 9 8 20 Vbias2 Vb2_dc Vb3_dc RFout/Vcc3 7 RFin1 21 GND3 22-25 Match RF1 Match RF2 Match RF3 5 4 6 GND1 Vcc1 RFin2 28 Vcc2 26 GND3 Rev. 4785A-SIGE-12/03 Pin Configuration Figure 2. Pinning SSOP28 NC NC NC RFin2 Vcc1 GND1 RFin1 Vb2_dc Vbias2 Vcc_ctl BGout Vctl Vctl1 Vctl2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc2 NC GND3 RFout/Vcc3 RFout/Vcc3 RFout/Vcc3 RFout/Vcc3 GND3 Vb3_dc Vbias3 Gain3 Gain2 Gain1 Vctl3 Pin Description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Note: Symbol NC NC NC RFin2 Vcc1 GND1 RFin1 Vb2_dc Vbias2 Vcc_ctl BGout Vctl Vctl1 Vctl2 Vctl3 Gain1 Gain2 Gain3 Vbias3 Vb3_dc GND3(1) RFout/Vcc3 RFout/Vcc3 RFout/Vcc3 RFout/Vcc3 GND3 NC Vcc2 (1) Function Not connected Not connected Not connected RF input (two-stage operation) Supply voltage (first stage) Ground RF input (three-stage operation) Input for gain setting (second stage) Output Buf2 Supply voltage control block Output band gap Control voltage input Control voltage input (first stage) Control voltage input (second stage) Control voltage input (third stage) Gain setting Buf1 Gain setting Buf2 Gain setting Buf3 Output Buf3 Input for gain setting (third stage) Ground RF output/supply voltage (third stage) RF output/supply voltage (third stage) RF output/supply voltage (third stage) RF output/supply voltage (third stage) Ground Not connected Supply voltage (second stage) 1. GND2 and GND3 are internally connected and both are connected to the down-set paddle 2 ATR0906 [Preliminary] 4785A-SIGE-12/03 ATR0906 [Preliminary] Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage VCC, no RF Input power Gain control voltage (1) Symbol VCC1, VCC2, VCC3 PRFin Vctl Tc Tstg PRFout Value 0 to +5.5 10 0 to +2.5 -30 to +100 -40 to +150 36 Unit V dBm V C C dBm Operating case temperature Storage temperature Maximum output power Note: 1. The part may not survive all maximums applied simultaneously. Thermal Resistance Parameters Junction case Symbol RthJC Value 19 Unit K/W Operating Range Parameters Supply voltage Ambient temperature Input frequency Symbol VCC Tamb fRFin Value 2.4 to 5.0 -30 to +85 600 to 1000 Unit V C MHz Electrical Characteristics Test conditions (if not otherwise specified): VCC = +3.5 V, Tamb = +25 C, 50 input and 50 output match No. 1 1.1 2 2.1 2.2 Parameters Power Supply Current consumption, power-down mode (leakage current) Frequency range Output power, normal conditions VCC = 3.5 V Tamb = +25 C PRFin = 3 dBm RL = RG = 50 VCC = 2.4 V Tamb = +85 C PRFin = 3 dBm RL = RG = 50 22-25 Vctl 0.2 V 10, 22-25, 28 I 15 25 A A Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 750 MHz Amplifier Mode fRFin750 PRFout750 700 34 35.0 800 MHz dBm C 2.3 2.4 2.5 Extreme conditions Input power Power added efficiency 22-25 7 PRFout750 PRFin750 PAE750 32 33.0 3 10 dBm dBm % VCC = 3.5 V PRFout = 35.0 dBm 10, 22-25, 28 45 50 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 3 4785A-SIGE-12/03 Electrical Characteristics (Continued) Test conditions (if not otherwise specified): VCC = +3.5 V, Tamb = +25 C, 50 input and 50 output match No. 2.6 2.7 2.8 2.9 2.10 2.11 2.12 3 3.1 3.2 Parameters Current consumption, active mode Input VSWR Stability/load mismatch 2nd harmonic distortion 3rd harmonic distortion 4th to 8th harmonic distortion Isolation between input and output PRFin750 = 8 dBm Vctl 0.2 V (power down) Test Conditions PRFout = 35.0 dBm PRFin = 0 to 8 dBm PRFout = 31.0 dBm PRFout = 31.0 dBm VCC = 4.6 V Pin 10, 22-25, 28 7 22-25 22-25 22-25 22-25 7, 22-25 Symbol I750 VSWR750 VSWR750 2fo750 3fo750 4fo750 to 8fo750 PRFout750 Min. Typ. 1.81 2:1 8:1 -35 -35 -35 -30 dBc dBc dBc dBm Max. Unit A Type* 830 MHz Amplifier Mode Frequency range Output power, normal conditions VCC = 3.5 V Tamb = +25 C PRFin = 3 dBm RL = RG = 50 VCC = 2.4 V Tamb = +85 C PRFin = 3 dBm RL = RG = 50 22-25 fRFin830 PRFout830 776 34 35.0 870 MHz dBm C A 3.3 3.4 3.5 Extreme conditions Input power Power added efficiency Current consumption, active mode Input VSWR Stability/load mismatch 2nd harmonic distortion 3rd harmonic distortion 4th to 8th harmonic distortion Isolation between input and output 22-25 7 PRFout830 PRFin830 PAE830 31.5 32.5 3 10 dBm dBm % C A A VCC = 3.5 V PRFout = 35.0 dBm PRFout = 35.0 dBm PRFin = 0 to 8 dBm PRFout = 31.0 dBm PRFout = 31.0 dBm VCC = 4.6 V 10, 22-25, 28 10, 22-25, 28 7 22-25 22-25 22-25 22-25 43 48 3.6 3.7 3.8 3.9 3.10 3.11 3.12 I830 VSWR830 VSWR830 2fo830 3fo830 4fo830 to 8fo830 PRFout830 1.88 2:1 8:1 -35 -35 -35 -30 A A C C dBc dBc dBc dBm A A A A PRFin830 = 8 dBm Vctl 0.2 V (power down) 7, 22-25 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 4 ATR0906 [Preliminary] 4785A-SIGE-12/03 ATR0906 [Preliminary] Electrical Characteristics (Continued) Test conditions (if not otherwise specified): VCC = +3.5 V, Tamb = +25 C, 50 input and 50 output match No. 4. 4.1 4.2 Parameters Frequency range Output power, normal conditions VCC = 3.5 V Tamb = +25 C PRFin = 3 dBm RL = RG = 50 VCC = 2.4 V Tamb = +85 C PRFin = 3 dBm RL = RG = 50 22-25 Test Conditions Pin Symbol fRFin940 PRFout940 Min. 776 33 34.0 Typ. Max. 870 Unit MHz dBm Type* C C 940 MHz Amplifier Mode 4.3 4.4 4.5 Extreme conditions Input power Power added efficiency Current consumption, active mode Input VSWR Stability/load mismatch 2nd harmonic distortion 3rd harmonic distortion 4 to 8 harmonic distortion Isolation between input and output Power Control Control curve slope Power control range Control voltage range Control current th th 22-25 7 PRFout940 PRFin940 PAE940 29 30.0 3 10 dBm dBm % C C C VCC = 3.5 V PRFout = 34.0 dBm PRFfout = 34.0 dBm PRFin = 0 to 8 dBm PRFout = 31.0 dBm PRFout = 31.0 dBm VCC = 4.6 V 10, 22-25, 28 10, 22-25, 28 7 22-25 22-25 22-25 22-25 41 46 4.6 4.7 4.8 4.9 4.10 4.11 4.12 5 5.1 5.2 5.3 5.4 I940 VSWR940 VSWR940 2fo940 3fo940 4fo940 to 8fo940 PRFout940 1.56 2:1 8:1 -35 -35 -35 -30 A C C C dBc dBc dBc dBm C C C C PRFin940 = 8 dBm Vctl 0.2 V (power down) PRFout 5 dBm PRFout 25 dBm Vctl = 0 to 2.5 V PRFin = 0 to 8 dBm Vctl = 0 to 2.5 V 7, 22-25 22-25 22-25 12-14 12-14 Sctl Gctl Vctl Ictl 60 0.5 300 120 350 150 2.0 200 dB/V dB/V dB V A C C C A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 5 4785A-SIGE-12/03 Application Example Figure 3. Application Example for 830 MHz with Variable Gain Vctl R3 Vctl1 13 Gain1 Vctl2 16 14 R7 Gain2 17 R11 Vctl3 15 C22 Gain3 18 19 BGout 11 C4 Buf1 Vctl 12 BG Buf2 Buf 3 9 8 20 7 Match Vbias3 C6 R14 Vbias2 Vb2_dc Vb3_dc MS3 RFout/ Vcc3 L3 R1 C1 MS4 C7 L8 MS5 C21 C8 RFout C25 L2 Vcc_ctl C18 RFin MS7 L4 C5 Vcc_ctl 10 C3 L9 MS6 RFin1 21 GND3 RF1 5 Match RF2 22-25 Match RF3 26 GND3 6 GND1 4 28 Vcc2 RFin2 Vcc1 MS8 MS1 MS9 L12 C26 MS2 L5 C20 L7 C14 C19 L10 C11 L11 C10 C17 C12 C16 C13 C9 C15 Vcc1 Vcc2 Vcc3 6 ATR0906 [Preliminary] 4785A-SIGE-12/03 ATR0906 [Preliminary] Recommended Package Footprint Figure 4. Extract from the PCB Showing a Part of the Core Application (without Components) Notes: 1. Only ground signal traces are recommended directly under the package. 2. The greatest possible density of ground vias guarantees an optimum connection of the ground layers and the best diversion of the heat. 3. The heat slug must be soldered to GND. 4. Plugging of the ground via under the heat slug is also recommended to avoid soldering problems. 7 4785A-SIGE-12/03 Ordering Information Extended Type Number ATR0906 Package PSSOP28 Remarks - Package Information Package PSSOP28 Dimensions in mm 9.98 9.80 1.60 1.45 0.25 0.64 8.32 28 15 0.10 0.00 3.91 6.02 0.2 2.21 1.80 technical drawings according to DIN specifications 1 7.29 6.88 14 8 ATR0906 [Preliminary] 4785A-SIGE-12/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Literature Requests www.atmel.com/literature Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life support devices or systems. (c) Atmel Corporation 2003. All rights reserved. Atmel (R) and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4785A-SIGE-12/03 |
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