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Freescale Semiconductor Technical Data
Document Number: MRFE6S9205H Rev. 0, 10/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 21.2 dB Drain Efficiency -- 34% Device Output Signal PAR -- 6.3 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 39.1 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 260 W CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9205HR3 MRFE6S9205HSR3
880 MHz, 58 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRFE6S9205HR3
CASE 465C - 02, STYLE 1 NI - 880S MRFE6S9205HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +66 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 202 W CW Case Temperature 77C, 58 W CW Symbol RJC Value (2,3) 0.27 0.33 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRFE6S9205HR3 MRFE6S9205HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class Class 1C (Minimum) Class B (Minimum) Class IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 600 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 4.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 1.63 590 491 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.4 2.2 0.1 2.1 2.9 0.2 2.9 3.7 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg. W - CDMA, f = 880 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched on input. (continued) Gps D PAR ACPR IRL 20 32 6 -- -- 21.2 34 6.3 - 39.1 - 12.5 23 -- -- - 37.5 - 8.5 dB % dB dBc dB
MRFE6S9205HR3 MRFE6S9205HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Video Bandwidth @ 220 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 35 MHz Bandwidth @ Pout = 58 W Avg. Average Deviation from Linear Phase in 35 MHz Bandwidth @ Pout = 200 W CW Average Group Delay @ Pout = 200 W CW, f = 880 MHz Part - to - Part Insertion Phase Variation @ Pout = 200 W CW, f = 880 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol VBW -- GF Delay G P1dB -- -- -- -- -- -- 10 0.315 0.59 4.27 26.3 0.016 0.006 -- -- -- -- -- -- -- dB ns dB/C dBm/C Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 865 - 900 MHz Bandwidth
MRFE6S9205HR3 MRFE6S9205HSR3 RF Device Data Freescale Semiconductor 3
VSUPPLY B1 VBIAS + R2 C5 C6 C7 R1 RF INPUT Z1 C1 C2 C3 C4 VSUPPLY + C15 C16 C17 C18 C19 C20 Z10 Z8 Z11 Z12 Z13 Z14 Z15 Z16 C27 Z9 DUT C8 C9 C10 C11 C12 C13 C14 RF Z17 OUTPUT R3 C21 C22 C23 C24 C25 + C26
Z2
Z3
Z4
Z5
Z6
Z7
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z9 Z10
0.263 x 0.065 Microstrip 0.310 x 0.065 Microstrip 0.711 x 0.120 Microstrip 0.199 x 0.120 Microstrip 0.263 x 1.020 x 0.120 Taper 0.351 x 1.020 Microstrip 0.055 x 1.020 Microstrip 0.947 x 0.120 Microstrip 0.060 x 0.980 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB
0.150 x 0.980 Microstrip 0.200 x 0.980 x 0.387 Taper 0.115 x 0.444 Microstrip 0.140 x 0.444 x 0.110 Taper 0.770 x 0.110 Microstrip 0.442 x 0.065 Microstrip 0.274 x 0.065 Microstrip Taconic RF35 0.030, r = 3.5
Figure 1. MRFE6S9205HR3(HSR3) Test Circuit Schematic
Table 5. MRFE6S9205HR3(HSR3) Test Circuit Component Designations and Values
Part B1 C1, C7, C15, C16, C21, C22, C27 C2, C14 C3, C4 C5 C6, C17, C18, C19, C23, C24, C25 C8, C9, C10, C11, C12, C13 C20, C26 R1, R3 R2 Short RF Bead 39 pF Chip Capacitors 0.8 - 8.0 pF Variable Capacitors, Gigatrim 5.1 pF Chip Capacitors 33 F, 25 V Electrolytic Capacitor 10 F, 50 V Chip Capacitors 6.8 pF Chip Capacitors 470 F, 63 V Electrolytic Capacitors 3.3 , 1/3 W Chip Resistors 2.2 k, 1/4 W Chip Resistor Description Part Number 2743019447 ATC100B390JT500XT 27291SL ATC100B5R1JT500XT EMVY350ADA330MF55G GRM55DR61H106KA88B ATC100B6R8JT500XT EKME630ELL471MK255 CRCW12103R30FKEA CRCW12062K20FKEA Manufacturer Fair - Rite ATC Johanson ATC Nippon Chemi - Con Murata ATC United Chemi - Con Vishay Vishay
MRFE6S9205HR3 MRFE6S9205HSR3 4 RF Device Data Freescale Semiconductor
R3 B1 + R2 C6
C26
C7
C21 C22
C23 C24
C5
C4 C1
R1 CUT OUT AREA
C9 C12 C10 C8
C13
C25 C14 C27
C2 C3
C11
C19
C15 C16
C17 C18
MRFE6S9205H Rev. 1
C20
Figure 2. MRFE6S9205HR3(HSR3) Test Circuit Component Layout
MRFE6S9205HR3 MRFE6S9205HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D D, DRAIN EFFICIENCY (%) 23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 15 800 820 840 860 880 900 920 940 f, FREQUENCY (MHz) PARC IRL -2.5 960 Gps VDD = 28 Vdc, Pout = 58 W (Avg.) IDQ = 1400 mA, Single-Carrier W-CDMA, 3.84 MHz, Channel Bandwidth, Input PAR = 7.5 dB @ 0.01% Probability (CCDF) 36 34 32 30 -0.5 PARC (dB) -1 -1.5 -2
0 -4 -8 -12 -16
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 58 Watts Avg.
D, DRAIN EFFICIENCY (%) 22 21 Gps, POWER GAIN (dB) 20 19 18 17 16 15 14 800 PARC IRL -4 820 840 860 880 900 920 940 960 f, FREQUENCY (MHz) VDD = 28 Vdc, Pout = 95 W (Avg.), IDQ = 1400 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input PAR = 7.5 dB @ 0.01% Probability (CCDF) D Gps 40 IRL, INPUT RETURN LOSS (dB) -2 -2.5 PARC (dB) -3 -3.5 0 -5 -10 -15 46 44 42
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 95 Watts Avg.
23 22 Gps, POWER GAIN (dB) 21 20 19 18 700 mA 17 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 1050 mA 1750 mA 1400 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2100 mA 0 -10 -20 IDQ = 700 mA -30 -40 -50 1400 mA -60 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 1750 mA 1050 mA VDD = 28 Vdc, f1 = 875 MHz, f2 = 885 MHz Two-Tone Measurements, 10 MHz Tone Spacing
IRL, INPUT RETURN LOSS (dB)
VDD = 28 Vdc, f1 = 875 MHz, f2 = 885 MHz Two-Tone Measurements, 10 MHz Tone Spacing
2100 mA
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRFE6S9205HR3 MRFE6S9205HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) -10 IMD, INTERMODULATION DISTORTION (dBc) -20 -30 -40 3rd Order -50 5th Order -60 7th Order -70 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP VDD = 28 Vdc, IDQ = 1400 mA f1 = 875 MHz, f2 = 885 MHz Two-Tone Measurements, 10 MHz Tone Spacing 0 -10 -20 -30 -40 -50 -60 1 IM7-U IM7-L 10 TWO-TONE SPACING (MHz) 100 IM3-U IM3-L IM5-U IM5-L VDD = 28 Vdc, Pout = 220 W (PEP), IDQ = 1400 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 0 -1 -2 -3 D -4 -5 30 40 50 60 70 80 Ideal
Figure 8. Intermodulation Distortion Products versus Output Power
50 45 40
-1 dB = 51.81 W -2 dB = 73.12 W VDD = 28 Vdc, IDQ = 1400 mA f = 880 MHz, Input PAR = 7.5 dB Actual
35 30 25 20 110
-3 dB = 99.2 W
90
100
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 1 10 100 Pout, OUTPUT POWER (WATTS) CW D VDD = 28 Vdc IDQ = 1400 mA f = 880 MHz Gps TC = -30_C 25_C -30_C 25_C 60 50 40 85_C 30 20 10 0 400 D, DRAIN EFFICIENCY (%) 70
85_C
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
MRFE6S9205HR3 MRFE6S9205HSR3 RF Device Data Freescale Semiconductor 7
D, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
22 IDQ = 1400 mA f = 880 MHz 21 Gps, POWER GAIN (dB) MTTF (HOURS) VDD = 24 V 28 V 18 0 50 100 150 200 250 300 32 V 105 350 90 110 130 150 170 190 210 230 250 Pout, OUTPUT POWER (WATTS) CW TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 58 W Avg., and D = 34%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 107 108
20
106
19
Figure 11. Power Gain versus Output Power
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. Input PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 Compressed Output Signal @ 58 W Pout Input Signal -50 (dB) -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 14. Single - Carrier W - CDMA Spectrum
MRFE6S9205HR3 MRFE6S9205HSR3 8 RF Device Data Freescale Semiconductor
f = 980 MHz
Zload f = 820 MHz Zo = 5
f = 980 MHz
Zsource
f = 820 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource W 1.80 - j4.00 1.88 - j3.76 1.64 - j3.65 1.54 - j3.41 1.35 - j3.13 1.37 - j2.89 1.37 - j2.66 1.39 - j2.53 1.25 - j2.33 Zload W 1.75 - j0.73 1.68 - j0.69 1.57 - j0.64 1.44 - j0.58 1.33 - j0.51 1.21 - j0.40 1.07 - j0.27 0.92 - j0.13 0.74 + j0.01
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRFE6S9205HR3 MRFE6S9205HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M (INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465B - 03 ISSUE D NI - 880 MRFE6S9205HR3
B
1
(FLANGE)
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
DIM A B C D E F H K M N R S aaa bbb ccc
C F E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
T A
SEATING PLANE
CASE 465C - 02 ISSUE D NI - 880S MRFE6S9205HSR3
MRFE6S9205HR3 MRFE6S9205HSR3 10 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Oct. 2007 * Initial Release of Data Sheet Description
MRFE6S9205HR3 MRFE6S9205HSR3 RF Device Data Freescale Semiconductor 11
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MRFE6S9205HR3 MRFE6S9205HSR3
Rev. 12 0, 10/2007 Document Number: MRFE6S9205H
RF Device Data Freescale Semiconductor

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