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Freescale Semiconductor Technical Data
Document Number: MRFE6S9160H Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. * Typical Single - Carrier N - CDMA. Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 21 dB Drain Efficiency -- 31% ACPR @ 750 kHz Offset -- - 46.8 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness. Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9160HR3 MRFE6S9160HSR3
880 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRFE6S9160HR3
CASE 465A - 06, STYLE 1 NI - 780S MRFE6S9160HSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS Tstg TC TJ
Value - 0.5, +66 - 0.5, +12 - 65 to +150 150 225
Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 160 W CW Case Temperature 73C, 35 W CW Symbol RJC Value (2,3) 0.31 0.33 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved.
MRFE6S9160HR3 MRFE6S9160HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 525 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss -- -- 2.2 80.2 -- -- pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1 -- 2.1 0.1 2 3 3.17 0.175 3 -- 4.22 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. N - CDMA, f = 880 MHz, Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps D ACPR IRL 20 29 -- -- 21 31 - 46.8 - 17 23 -- - 45 -9 dB % dBc dB
1. VGG = 19/18 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part is internally matched on input. (continued)
MRFE6S9160HR3 MRFE6S9160HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Video Bandwidth @ 160 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 35 MHz Bandwidth @ Pout = 35 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol VBW -- 10 -- Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 865 - 900 MHz Bandwidth
GF G P1dB
-- -- --
0.5 0.016 0.008
-- -- --
dB dB/C dBm/C
MRFE6S9160HR3 MRFE6S9160HSR3 RF Device Data Freescale Semiconductor 3
B2 VBIAS + C16 C17 C18 C19 C7 L1 RF INPUT Z1 C1 C3 C4 C6 DUT C5 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C8 C10 C11 C12 C13 C14 C15 Z9 Z10 C9 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 C2 Z19 B1 R2 + R1 C20 C21 L2 RF OUTPUT C22 C23 C24 VSUPPLY
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
0.426 x 0.080 Microstrip 0.813 x 0.080 Microstrip 0.471 x 0.080 Microstrip 0.319 x 0.220 Microstrip 0.171 x 0.220 Microstrip 0.200 x 0.425 x 0.630 Taper 0.742 x 0.630 Microstrip 0.233 x 0.630 Microstrip 0.128 x 0.630 Microstrip 0.134 x 0.630 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB
0.066 x 0.630 Microstrip 0.630 x 0.425 x 0.220 Taper 0.120 x 0.220 Microstrip 0.292 x 0.220 Microstrip 0.023 x 0.220 Microstrip 0.030 x 0.220 Microstrip 0.846 x 0.080 Microstrip 0.440 x 0.080 Microstrip 0.434 x 0.080 Microstrip Arlon CuClad 250GX - 0300- 55- 22, 0.030, r = 2.55
Figure 1. MRFE6S9160HR3(SR3) Test Circuit Schematic
Table 5. MRFE6S9160HR3(SR3) Test Circuit Component Designations and Values
Part B1, B2 C1, C2, C19 C3, C11 C4 C5, C6 C7, C8 C9, C10 C12 C13, C14 C15 C16 C17 C18 C20 C21, C22, C23 C24 L1, L2 R1 R2 Description Ferrite Beads, Small 47 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 2.7 pF Chip Capacitor 15 pF Chip Capacitors 12 pF Chip Capacitors 4.3 pF Chip Capacitors 8.2 pF Chip Capacitor 3.9 pF Chip Capacitors 0.6- 4.5 pF Variable Capacitor, Gigatrim 22 pF Chip Capacitor 1 F, 50 V Tantalum Capacitor 20K pF Chip Capacitor 180 pF Chip Capacitor 10 F, 50 V Chip Capacitors 470 F, 63 V Electrolytic Capacitor 10 nH Inductors 180 , 1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number 2743019447 ATC100B470JT500XT 27291SL ATC100B2R7JT500XT ATC100B150JT500XT ATC100B120JT500XT ATC100B4R3JT500XT ATC100B8R2JT500XT ATC100B3R9JT500XT 27271SL ATC100B220JT500XT T491C105K0J0AT CDR35BP203AKYS ATC100B181JT500XT GRM55DR61H106KA88B ESME630ELL471MK25S 0603HC CRCW12061800FKEA CRCW120610R0FKEA Manufacturer Fair Rite ATC Johanson ATC ATC ATC ATC ATC ATC Johanson ATC Kemet Kemet ATC Murata United Chemi - Con Coilcraft Vishay Vishay
MRFE6S9160HR3 MRFE6S9160HSR3 4 RF Device Data Freescale Semiconductor
C16 B1 900 MHz Rev. 2 C18 R2 B2
C24
C17
C21
C22 C23
R1 C19 C20 L1 C5 C7 C9 L2 C14 C1 CUT OUT AREA C2
C3
C4 C6
C12 C13 C8 C10 C11
C15
Figure 2. MRFE6S9160HR3(SR3) Test Circuit Component Layout
MRFE6S9160HR3 MRFE6S9160HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
21 20 19 Gps, POWER GAIN (dB) 18 17 16 IRL 15 14 13 820 840 860 880 900 920 940 960 f, FREQUENCY (MHz) ALT1 -55 -60 -65 980 Gps D 33 30 27 -40 -45 -50 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) 0 -5 -10 -15 -20 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) 0 -5 -10 -15 -20 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB)
VDD = 28 Vdc, Pout = 35 W (Avg.) IDQ = 1200 mA, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 ACPR
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 35 Watts Avg.
20 19 18 Gps, POWER GAIN (dB) 17 16 15 IRL 14 13 ALT1 12 820 840 860 880 900 920 940 960 f, FREQUENCY (MHz) -50 -60 -70 980 VDD = 28 Vdc, Pout = 70 W (Avg.) IDQ = 1200 mA, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13 ACPR Gps D 50 45 40 35 -30 -40
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 70 Watts Avg.
22 21 Gps, POWER GAIN (dB) 20 19 18 17 16 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP IDQ = 1800 mA 1500 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 900 mA -50 1200 mA -60 -70 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 1800 mA 1500 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements, 1 kHz Tone Spacing
1200 mA 900 mA
IDQ = 600 mA
600 mA VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements, 100 kHz Tone Spacing
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRFE6S9160HR3 MRFE6S9160HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 -70 -80 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 3rd Order VDD = 28 Vdc, IDQ = 1200 mA f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements, 1 kHz Tone Spacing 0 -10 -20 -30 IM3-U IM5-U VDD = 28 Vdc, Pout = 140 W (PEP) IDQ = 1200 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz
-40 IM3-L -50 IM5-L -60 -70 1 IM7-U
5th Order 7th Order
IM7-L
10 TWO-TONE SPACING (MHz)
100
Figure 7. Intermodulation Distortion Products versus Output Power
60
Figure 8. Intermodulation Distortion Products versus Tone Spacing
Ideal P6dB = 53.13 dBm (205.59 W)
58 Pout, OUTPUT POWER (dBm) 56 54 52 50 48 28 P3dB = 52.86 dBm (193.2 W) P1dB = 52.1 dBm (162.2 W) Actual VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 12 sec(on), 1% Duty Cycle f = 880 MHz 29 30 31 32 33 34 35 36 37
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) -20 VDD = 28 Vdc, IDQ = 1200 mA f = 880 MHz, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 ACPR TC = -30_C 85_C 25_C 25_C -30 -40 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) 80 70 60 50 40 30 20 10 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 ALT1 Gps D 85_C 25_C
85_C -50 -60 -70 -30_C -80 -90
-30_C
-100 200
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power
MRFE6S9160HR3 MRFE6S9160HSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
24 23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 1 10 100 Pout, OUTPUT POWER (WATTS) CW D 25_C 85_C VDD = 28 Vdc IDQ = 1200 mA f = 880 MHz -30_C Gps TC = -30_C 80 70 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 25_C 60 85_C 50 40 30 20 10 0 400 16 0 100 200 300 Pout, OUTPUT POWER (WATTS) CW 20 21
19
18 IDQ = 1200 mA f = 880 MHz 17 VDD = 24 V 28 V 32 V
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
Figure 12. Power Gain versus Output Power
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 35 W Avg., and D = 31%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9160HR3 MRFE6S9160HSR3 8 RF Device Data Freescale Semiconductor
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
1.2288 MHz Channel BW .... ................ .... ... ... . .................................. . .. . . . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . ... ............. ........... .... ....... ......... . .... ... . ........ ....... .. ........ .... ..... . . ... .... ......... ... ... . . ...... ....... ..... .... . .. ... . ... ..... .... .... . .... ... ........ . .......... . .... .. .... . ...... .... ....... .. .. ........ -ACPR in 30 kHz .. +ACPR in 30 kHz ............ ..... ........... ..... . ... ............... ......... .. ... ......... Integrated BW Integrated BW .. ......... ..... ... . . ............ ....... .. ....... ....
Figure 14. Single - Carrier CCDF N - CDMA
-110 -3.6 -2.9 -2.2
-1.5 -0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRFE6S9160HR3 MRFE6S9160HSR3 RF Device Data Freescale Semiconductor 9
f = 910 MHz Zload
f = 850 MHz Zo = 2
f = 910 MHz
Zsource
f = 850 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. f MHz 850 865 880 895 910 Zsource 0.61 - j1.27 0.66 - j1.15 0.64 - j1.05 0.55 - j0.90 0.48 - j0.74 Zload 1.20 + j0.03 1.26 + j0.15 1.31 + j0.22 1.32 + j0.28 1.26 + j0.32
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance MRFE6S9160HR3 MRFE6S9160HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRFE6S9160HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRFE6S9160HSR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
MRFE6S9160HR3 MRFE6S9160HSR3 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Mar. 2007 Dec. 2008 * Initial Release of Data Sheet * Table 4, On Characteristics, tightened VDS(on) Min value from 0.05 to 0.1 to match production test values, p. 2 * Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 4 * Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 4 * Adjust scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 7 Description
MRFE6S9160HR3 MRFE6S9160HSR3 12 RF Device Data Freescale Semiconductor
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MRFE6S9160HR3 MRFE6S9160HSR3
Document Number: RF Device Data MRFE6S9160H Rev. 1, 12/2008 Freescale Semiconductor
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