|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
IGBT Optimized for switching up to 5KHz Preliminary data sheet IXGA 12N120A2 IXGP 12N120A2 VCES = 1200 V = 24 A IC25 VCE(sat) = 3.0 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 100 Clamped inductive load TC = 25C Maximum Ratings 1200 1200 20 30 24 12 48 ICM = 24 @ 0.8 VCES 75 -55 ... +150 150 -55 ... +150 300 W C C C C Features V V V V A A A A G E C (TAB) GC E TO-220AB (IXGP) TO-263 AA (IXGA) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md www..net *International standard packages Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g JEDEC TO-220AB and TO-263AA *Low VCE(sat) - for minimum on-state conduction losses - drive simplicity Applications Weight *MOS Gate turn-on Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IC = 250 A, VGE = 0 V IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15V Characteristic Values Min. Typ. Max. 1200 2.5 TJ = 25C TJ = 125C 5.0 25 250 100 2.4 3.0 V V A A nA V * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode * Capacitor power supplies discharge Advantages * Easy to mount with one screw * Reduces assembly time and cost * High power density (c) 2004 IXYS All rights reserved DS99199(8/04) IXGA12N120A2 IXGP12N120A2 TO-220 AB Dimensions Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs IC(on) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-220 0.5 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 100 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 100 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90 VCE = 10 V Pulse test, t 300 s, duty cycle 2 % VGE = 10 V, VCE = 10V 35 530 30 4 24 5.5 8.8 15 30 680 1000 650 1000 5.4 15 30 0.5 700 1050 7.7 1.66 9.0 A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W TO-263 AA Outline Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side Characteristic Values Min. Typ. Max. 4.0 7.8 S www..net 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Min. Recommended Footprint (Dimensions in inches and mm) Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXGA12N120A2 IXGP12N120A2 Fig. 1. Output Characteristics @ 25 C 24 22 20 18 VGE = 15V 13V 11V 70 60 50 VGE = 15V 13V Fig. 2. Extended Output Characteristics @ 25 C I C - Amperes 14 12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3 I C - Amperes 16 9V 11V 40 30 20 7V 10 9V 7V 5V 0 3.5 4 4.5 5 0 5 10 5V 15 20 25 30 V C E - Volts Fig. 3. Output Characteristics @ 125 C 24 22 20 18 VGE = 15V 13V 11V 1.7 1.6 1.5 VGE = 15V V C E - Volts Fig. 4. Dependence of V CE(sat) on Tem perature VC E (sat)- Normalized I C = 24A I C - Amperes 16 14 12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5 5V 7V 9V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 I C = 6A I C = 12A www..net V CE - Volts 4 4.5 5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 8 7 6 I C = 24A TJ = 25C 24 21 18 Fig. 6. Input Adm ittance I C - Amperes VC E - Volts 5 4 3 2 1 6 7 8 9 12A 6A 15 12 9 6 3 0 TJ = 125C 25C -40C V G E - Volts 10 11 12 13 14 15 16 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 V G E - Volts (c) 2004 IXYS All rights reserved IXGA12N120A2 IXGP12N120A2 Fig. 7. Transconductance 11 10 9 18 16 14 I C = 24A TJ = 25C VGE = 15V VCE = 960V I C = 12A Fig. 8. Dependence of Turn-off Energy Loss on RG E o f f - milliJoules 8 g f s - Siemens 7 6 5 4 3 2 1 0 0 3 6 9 12 15 18 21 24 27 TJ = -40C 25C 125C 12 10 8 6 4 2 0 0 I C = 6A 200 400 600 800 1000 I C - Amperes Fig. 9. Dependence of Turn-Off Energy Loss on IC 16 14 12 10 8 6 4 2 0 6 www..net R G - Ohms Fig. 10. Dependence of Turn-off 3 2.7 Delay Tim e on RG VGE = 15V VCE = 960V TJ = 25C I C = 6A 12A 24A R G =100 t d ( o f f ) - microseconds VGE = 15V E o f f - MilliJoules VCE = 960V TJ = 25C 2.4 2.1 1.8 1.5 1.2 0.9 0.6 9 12 I C - Amperes 15 18 21 24 0 200 R G - Ohms 400 600 800 1000 Fig. 11. Dependence of Turn-off 0.80 0.75 Fig. 12. Dependence of Turn-off 0.85 Current Fall Tim e on RG I C = 24A Sw itching Tim e on IC t f i - microseconds 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0 200 I C = 6A I C = 12A VGE = 15V VCE = 960V TJ = 25C Switching Time -microseconds 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 td(off) tfi - - - - R G = 100 VGE = 15V VCE = 960V TJ = 25C 6 8 10 12 14 16 18 20 22 24 R G - Ohms 400 600 800 1000 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXGA12N120A2 IXGP12N120A2 Fig. 13. Gate Charge 16 14 12 10 8 6 4 2 0 0 2 4 6 5 VCE = 600V IC=1 2A 30 Fig. 14. Reverse-Bias Safe Operating Area 25 I C - Amperes I G= 1 0mA 20 VG E - Volts 15 10 TJ = 125C R G = 100 dV/dT < 10V/ns 0 Q G - nanoCoulombs 8 10 12 14 16 18 20 22 24 100 300 500 700 900 1100 1300 V C E - Volts Fig. 15. Capacitance 1000 C ies Capacitance - p F 100 C oes 10 C res f = 1 MHz 1 0 5 10 15 20 25 30 35 40 www..net V C E - Volts Fig. 17. Maxim um Transient Therm al Resistance 10.00 R ( t h ) J C - C / W 1.00 0.10 0.1 1 Pulse Width - milliseconds 10 100 1000 (c) 2004 IXYS All rights reserved |
Price & Availability of IXGA12N120A2 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |