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| www..com SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N024-06P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Pulse Voltage Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current, Single Pulse Avalanche Energy, Single Pulse TA = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C PD TJ, Tstg L = 0.1 mH TC = 25_C TC= 100_C ID IDM IS IAS EAS Symbol VDS(pulse) VDS VGS Limit 24C 22 "20 80d 56d 100 26 45 101 6.8a 65 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case t v 10 sec Steady State RthJA RthJC Symbol Typical 18 40 1.9 Maximum 22 50 2.3 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72289 S-31398--Rev. A, 30-Jun-03 www.vishay.com 1 www..com SUD50N024-06P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 15 0.0073 50 0.0046 0.006 0.0084 0.0095 S W 22 0.8 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss RG Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 10 V, VGS = 4.5 V, ID = 50 A VGS = 0 V, VDS = 10 V, f = 1 MHz 2550 900 415 1.5 19 7.5 6.0 11 10 24 9 20 15 35 15 ns 30 nC W p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 160 140 VGS = 10 thru 5 V 120 I D - Drain Current (A) 4V 100 80 60 40 20 2V 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3V I D - Drain Current (A) 60 80 100 Transfer Characteristics 40 TC = 125_C 20 25_C - 55_C 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72289 S-31398--Rev. A, 30-Jun-03 2 www..com SUD50N024-06P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 100 TC = - 55_C g fs - Transconductance (S) 80 r DS(on)- On-Resistance ( W ) 25_C 125_C 0.008 VGS = 4.5 V 0.006 0.010 Vishay Siliconix On-Resistance vs. Drain Current 60 VGS = 6.3 V 40 0.004 VGS = 10 V 0.002 20 0 0 10 20 30 40 50 0.000 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 3500 3000 Ciss C - Capacitance (pF) 2500 2000 1500 Coss 1000 Crss 500 0 0 4 8 12 16 20 10 Gate Charge V GS - Gate-to-Source Voltage (V) 8 VDS = 10 V ID = 50 A 6 4 2 0 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature 1.6 VGS = 10 V ID = 30 A r DS(on)- On-Resistance ( W ) (Normalized) 1.4 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.2 TJ = 150_C 10 TJ = 25_C 1.0 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Document Number: 72289 S-31398--Rev. A, 30-Jun-03 www.vishay.com 3 www..com SUD50N024-06P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 40 1000 Limited by rDS(on) 32 I D - Drain Current (A) I D - Drain Current (A) 100 10, 100 ms 1 ms 10 ms 100 ms 1s 10 s 100 s dc New Product Safe Operating Area 24 10 16 1 8 0.1 TA = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 TA - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 72289 S-31398--Rev. A, 30-Jun-03 |
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