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| SMD Type 400V P-Channel MOSFET KQB4P40 TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features 3.5A, -400V, RDS(on) = 3.1 @VGS = -10 V Low gate charge ( typical 18 nC) Fast switching + .2 5 .2 8 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 100% avalanche tested Improved dv/dt capability 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 Low Crss ( typical 11 pF) + .2 8 .7 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Drain Current Continuous TC=25 Drain Current Continuous TC=100 Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power dissipation @ Ta=25 Power dissipation @ Tc=25 Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient * Thermal Resistance Junction to Ambient TJ, TSTG TL R R R JC JA JA Symbol VDSS ID (Note 1) IDM VGSS EAS IAR EAR dv/dt Rating -400 -3.5 -2.2 -14 30 260 -3.5 8.5 -4.5 3.13 Unit V A A A V mJ A mJ V/ns W W W/ (Note 1) (Note 1) (Note 3) PD 85 0.68 -55 to 150 300 1.47 40 62.5 /W /W /W * When mounted on the minimum pad size recommended (PCB Mount) 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KQB4P40 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 37mH, IAS = -3.5A, VDD = -50V, RG = 25 3. ISD -3.5A, di/dt 200A/ s, VDD , Starting TJ = 25 IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr VGS = 0 V, IS = -3.5 A VGS = 0 V, IS = -3.5 A, dIF / dt = 100 A/ s (Note 4) VDS = -320 V, ID = -3.5 A,VGS = -10 V(Note4,5) VDD = -200 V, ID = -3.5 A,RG = 25 (Note4,5) VDS = -25 V, VGS = 0 V,f = 1.0 MHz Symbol BVDSS Testconditons VGS = 0 V, ID = -250 ID = -250 A Transistors IC Min -400 Typ Max Unit V A, Referenced to 25 0.36 -1 -10 -100 100 V/ A A nA nA V VDS = -400 V, VGS = 0 V VDS = -320V, TC=125 VGS = -30 V, VDS = 0 V VGS = 30V, VDS = 0 V VDS = VGS, ID = -250 A -3.0 2.44 2.7 520 80 11 13 55 35 37 18 5.8 9.4 -5.0 3.1 VGS = -10 V, ID = -1.75A VDS = -50 V, ID = -1.75 A S 680 105 15 35 120 80 85 23 pF pF pF ns ns ns ns nC nC nC -3.5 -14 -5 A A V ns c 260 1.4 BVDSS, Starting TJ = 25 2% 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature 2 www.kexin.com.cn |
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