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WFP650
Silicon N-Channel MOSFET
Features
28A, 200v, RDS(on)=0.085 @VGS=10V Low gate charge (typical 95 nC) Low crss (typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability
General Description
These N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary , planar,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching Performance , and with stand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switching DC/DC converters, Switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ,TSTG TL
Parameter
Drain-Source Voltage Drain Current -Continuous(TC=25) -Continuous(TC=100) Drain Current -Pulsed Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation(TC=25) -Derate above25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds (Note 2) (Note 1) (Note 1) (Note 3) (Note 1)
Value
200 28 17.7 112 30 600 28 15.6 5.5 156 1.25 -55~150 300
Units
V A A A V mJ A mJ V/ns W W/
Thermal Characteristics
Symbol
RQJC RQCS RQJA
Parameter
Thermal Resistance,Junction-to-Case Thermal Resistance,Case-to-Sink Thermal Resistance,Junction-Ambient
Min
-
Value Typ
0.5 -
Max
0.8 62.5
Units
/W /W /W
Rev.A Jul.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WFP650
Electrical Characteristics TC=25
Characteristics
Drain-source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current ,Forward Gate-Body Leakage Current ,Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Symbol
BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Td(on) tr Td(off) tf Qg Qgs Qgd
Test Conditions
VGS=0V,ID=250A ID=250A,Reference d to 25 VDS=200V,VGS=0V VDS=160V,TC=125 VGS=30V,VDS=0V VGS=-30V,VDS=0V VDS=VGS,ID=250A VGS=10V,ID=14A VDS=40V,ID=14A (Note4) VDS=25V,VGS=0V, f=1.0MHz VDD=100V,ID=32A,RG =25 (Note4,5) VDS=160V,ID=32A,VG S=10V (Note4,5)
Min
200 -----2.0 -------------
Typ
-0.2 -----0.071 25 2600 330 75 30 240 295 195 95 13 43
Max
--10 100 100 -100 4.0 0.085 -3400 430 100 70 490 600 400 123 ---
Units
V V/ A A nA nA V S pF pF pF ns ns ns ns nC nC nC
Source-Drain Ratings and Characteristlcs
Characteristics
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Forward Current Drain-Source Diode
Symbol
IS ISM VSD trr Qrr
Test Conditions
--VGS=0V,IS=28A VGS=0V,IS=32A, dIF/dt=100A/s (Note4)
Min
------
Typ
---220 1.89
Max
28 112 1.5 ---
Units
A A V ns C
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Notes:
1. Repetitive Rating:Pulse Width limited by maximum junction temperature 2. L=1.15mH,IAS=28A,VDD=50V,RG=25,Starting TJ=25 3. ISD32A,di/dt300A/s,VDDBVDSS,Starting TJ=25 4. Pulse Test:Pulse width300s,Duty cycle2% 5. Essentially independent of operating temperature
2/7
Steady,all for your advance
WFP650
3/7
Steady,all for your advance
WFP650
4/7
Steady,all for your advance
WFP650
5/7
Steady,all for your advance
WFP650
6/7
Steady,all for your advance
WFP650
To-220 Package Dimension
7/7
Steady,all for your advance

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