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| NJG1139UA2 UHF BAND LOW NOISE AMPLIFIER GaAs MMIC ! GENERAL DESCRIPTION The NJG1139UA2 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA pass-through function to select high gain mode or low gain mode by single bit control. Also, the ESD protection circuit is integrated into the IC to achieve high ESD tolerance. An ultra-small and ultra-thin package of EPFFP6-A2 is adopted. ! PACKAGE OUTLINE NJG1139UA2 ! FEATURES " Low voltage operation " Low voltage control " Package " External matching parts [High gain mode] " Low current consumption " High gain " Low noise figure " High input IP3 [Low gain mode] " Low current consumption " Gain (Low loss) " High input IP3 ! PIN CONFIGURATION +1.8V typ. +1.8V typ. EPFFP6-A2 (Package size: 1.0mm x 1.0mm x 0.37mm typ.) 2pcs. 3.5mA typ. 14.0dB typ. 1.2dB typ. -4.0dBm typ. 11A typ. -2.0dB typ. +30.0dBm typ. (Top View) 6 RFIN 5 GND VCTL 4 Pin Connection 1. GND 2. VDD 3. RFOUT 4. VCTL 5. GND 6. RFIN Logic circuit 1PIN INDEX 1 GND VDD RFOUT 2 3 ! TRUTH TABLE "H"=VCTL(H), "L"=VCTL(L) VCTL H L LNA ON ON OFF Bypass OFF ON LNA mode High Gain mode Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2009-9-18 -1- NJG1139UA2 ! ABSOLUTE MAXIMUM RATINGS Ta=+25C, Zs=Zl=50 ohm PARAMETER Drain voltage Control voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL CONDITIONS RATINGS UNITS VDD VCTL PIN PD Topr Tstg VDD=1.8V 4-layer FR4 PCB with through-hole (101.5x114.5mm), Tj=150C 5.0 5.0 +15 590 -40~+95 -55~+150 V V dBm mW C C ! ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: VDD=1.8V, Ta=+25C, Zs=Zl=50 ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage Control voltage (High) Control voltage (Low) VDD VCTL(H) VCTL(L) IDD1 IDD2 ICTL RF OFF, VCTL=1.8V RF OFF, VCTL=0V RF OFF, VCTL=1.8V 1.7 1.5 0 - 1.8 1.8 0 3.5 11 6 3.6 3.6 0.4 5.0 25 10 V V V mA A A Operating current1 Operating current2 Control current -2- NJG1139UA2 ! ELECTRICAL CHARACTERISTICS2 (High Gain mode) General conditions: VDD=1.8V, VCTL=1.8V, Ta=+25C, Zs=Zl=50 ohm, with application circuit PARAMETERS Operating frequency Small signal gain1 Noise figure Input power at 1dB gain compression point1 Input 3rd order intercept point1 RF IN VSWR1 RF OUT VSWR1 SYMBOL CONDITIONS MIN TYP MAX UNITS fRF Gain1 NF P-1dB(IN)1 470 11.0 Exclude PCB & connector losses*1 620 14.0 1.2 -12.0 -4.0 1.5 1.5 770 17.0 1.7 4.9 3.0 MHz dB dB dBm dBm - -18.0 IIP3_1 VSWRi1 VSWRo1 f1=fRF, f2=fRF+100kHz, PIN=-25dBm -8.0 - ! ELECTRICAL CHARACTERISTICS3 (Low Gain mode) General conditions: VDD=1.8V, VCTL=0V, Ta=+25C, Zs=Zl=50 ohm, with application circuit PARAMETERS Operating frequency Small signal gain2 Input power at 1dB gain compression point2 Input 3rd order intercept point2 RF IN VSWR2 RF OUT VSWR2 SYMBOL CONDITIONS MIN TYP MAX UNITS fRF Gain2 P-1dB(IN)2 470 Exclude PCB & connector losses*2 620 -2.0 +15.0 +30.0 1.5 1.5 770 2.5 2.5 MHz dB dBm dBm - -2.5 +5.0 IIP3_2 VSWRi2 VSWRo2 f1=fRF, f2=fRF+100kHz, PIN=-8dBm +15.0 - *1 Input PCB and connector losses: 0.033dB(at 470MHz), 0.047dB(at 770MHz) *2 Input & output PCB and connector losses: 0.057dB(at 470MHz), 0.085dB(at 770MHz) -3- NJG1139UA2 ! TERMINAL INFORMATION No. SYMBOL DESCRIPTION Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. This terminal is a power supply terminal of LNA and the logic circuit. Inductor L2 as shown in the application circuit is a part of an external matching circuit, and also provide DC power to LNA. RF input terminal. Since this IC is integrated an input DC blocking capacitor. 1 GND 2 VDD 3 RFOUT 4 VCTL Control voltage supply terminal. 5 GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. RF input terminal. The RF signal is input through external matching circuit connected to this terminal. Since this IC is integrated an input DC blocking capacitor. 6 RFIN -4- NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25C, VDD=1.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit Pout vs. Pin (f=620MHz) 15 10 5 15 20 Gain, IDD vs. Pin (f=620MHz) 20 Gain Pout Gain (dB) 15 Pout (dBm) -5 -10 -15 -20 -25 -30 -40 P-1dB(IN)=-12.0dBm -35 -30 -25 -20 -15 -10 -5 0 10 10 5 IDD P-1dB(IN)=-12.0dBm 5 0 -40 0 -35 -30 -25 -20 -15 -10 -5 0 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin (f1=620MHz, f2=f1+100kHz) 20 19 Gain,NF vs.frequency (f=400~900MHz) 4 3.5 3 18 17 Pout 0 Pout, IM3 (dBm) Gain IM3 -40 15 14 13 -60 IIP3=-3.1dBm -80 -30 12 (NF:Exclude PCB,Connector Losses) 2 1.5 NF 1 0.5 0 900 -25 -20 -15 -10 -5 0 5 10 11 400 500 600 700 800 Pin (dBm) freqency (MHz) P-1dB(IN) vs. frequency (f=400~900MHz) 0 20 OIP3, IIP3 vs. frequency (f1=400~900MHz, f2=f1+100kHz, Pin=-25dBm) 15 OIP3, IIP3 (dBm) P-1dB(IN) (dBm) -5 10 OIP3 -10 P-1dB(IN) 5 0 -15 -5 IIP3 -20 400 500 600 700 800 900 -10 400 500 600 700 800 900 frequency (MHz) frequency (MHz) -5- NF (dB) -20 Gain (dB) 16 2.5 IDD (mA) 0 NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25C, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit Gain, NF vs. VDD (f=620MHz) 19 18 4 3.5 P-1dB(IN) vs. VDD (f=620MHz) 0 Gain Gain (dB) 16 15 14 13 12 11 1 1.5 2 2.5 3 3.5 4 2.5 2 1.5 1 P-1dB(IN) (dBm) 17 3 -5 NF (dB) -10 -15 NF 0.5 0 -20 1 1.5 2 2.5 3 3.5 4 VDD (V) VDD (V) OIP3, IIP3 vs. VDD (f=620MHz) 25 20 3 VSWR vs. VDD (f=620MHz) OIP3, IIP3 (dBm) 15 10 5 0 -5 -10 1 OIP3 VSWR 2.5 VSWRo 2 IIP3 1.5 VSWRi 1 1.5 2 2.5 3 3.5 4 1 1.5 2 2.5 3 3.5 4 VDD (V) VDD (V) IDD vs. VDD (RF off) 10 8 IDD (mA) 6 4 2 0 1 1.5 2 2.5 3 3.5 4 VDD (V) -6- NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=1.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit Gain, NF vs. Temperature (f=620MHz) 19 18 17 4 3.5 0 P-1dB(IN) vs. Temperature (f=620MHz) Gain (dB) NF (dB) 16 15 14 Gain 2.5 2 1.5 P-1dB(IN) (dBm) 3 -5 P-1dB(IN) -10 NF 13 12 11 -40 1 0.5 0 100 -15 -20 0 20 40 o 60 80 -20 -40 -20 0 20 40 o 60 80 100 Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature (f1=620MHz, f2=f1+100kHz, Pin=-25dBm) 20 3 VSWR vs. Temperature (f=620MHz) 15 OIP3 2.5 OIP3, IIP3 (dBm) VSWRo 10 5 VSWR 2 0 1.5 -5 VSWRi IIP3 -20 0 20 40 60 80 100 1 -40 -20 0 20 40 60 80 100 -10 -40 Temperature ( oC) Temperature ( oC) IDD vs. Temperature (RF off) 10 20 K factor vs. Temperature (f=50MHz~20GHz) 8 15 IDD (mA) 6 K factor -40(oC) 10 -20(oC) 0(oC) 25(oC) 60(oC) 85(oC) 95(oC) 4 5 2 0 -40 0 -20 0 20 40 o 60 80 100 0 5 10 15 20 Temperature ( C) Frequency (GHz) -7- NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25C, VDD=1.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit S11, S22 S21, S12 VSWRi, VSWRo Zin, Zout S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) -8- NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25C, VDD=1.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit Pout vs. Pin (f=620MHz) 20 15 -1 10 0 Gain, IDD vs. Pin (f=620MHz) 10 Gain 8 Pout (dBm) 0 -5 -10 -3 4 -4 -15 -20 -20 P-1dB(IN)=+15.0dBm -5 -20 P-1dB(IN)=+15.0dBm IDD 2 0 -15 -10 -5 0 5 10 15 20 -15 -10 -5 0 5 10 15 20 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin (f1=620MHz, f2=f1+100kHz) 40 20 0 Gain vs. frequency (f=400~900MHz) Pout Pout, IM3 (dBm) 0 -1 Gain Gain(dB) -20 -40 -60 -80 -100 -20 -2 -3 IM3 IIP3=+30.4dBm -4 (Gain:Exclude PCB,Connector Losses) -10 0 10 20 30 -5 400 500 600 700 800 900 Pin (dBm) frequency(MHz) P-1dB(IN) vs. frequency (f=400~900MHz) 20 34 OIP3, IIP3 vs. frequency (f1=400~900MHz, f2=f1+100kHz, Pin=-8dBm) 32 IIP3 P-1dB(IN) (dBm) OIP3, IIP3 (dBm) 15 P-1dB(IN) 10 30 28 OIP3 26 5 24 0 400 500 600 700 800 900 22 400 500 600 700 800 900 frequency (MHz) frequency (MHz) -9- IDD (mA) 5 Gain (dB) Pout -2 6 NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25C, VCTL=0V, Zs=Zl=50 ohm, with application circuit Gain vs. VDD (f=620MHz) 0 20 P-1dB(IN) vs. VDD (f=620MHz) -1 -2 P-1dB(IN) (dBm) 1 1.5 2 2.5 3 3.5 4 15 Gain (dB) 10 -3 5 -4 -5 0 1 1.5 2 2.5 3 3.5 4 VDD (V) VDD (V) OIP3, IIP3 vs. VDD (f=620MHz) 34 VSWR vs. VDD (f=620MHz) 1.5 32 IIP3 OIP3, IIP3 (dBm) 1.4 30 VSWR 1.3 OIP3 28 VSWRi 1.2 26 24 1.1 VSWRo 22 1 1.5 2 2.5 3 3.5 4 1 1 1.5 2 2.5 3 3.5 4 VDD (V) VDD (V) IDD vs. VDD (RF off) 25 20 IDD (uA) 15 10 5 0 1 1.5 2 2.5 3 3.5 4 VDD (V) - 10 - NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=1.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit Gain vs. Temperature (f=620MHz) 0.0 20 P-1dB(IN) vs. Temperature (f=620MHz) -1.0 -2.0 P-1dB(IN) (dBm) 15 Gain (dB) P-1dB(IN) 10 -3.0 5 -4.0 -5.0 -40 -20 0 20 40 o 60 80 100 0 -40 -20 0 20 40 o 60 80 100 Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature (f1=620MHz, f2=f1+100kHz, Pin=-8dBm) 34 1.5 VSWR vs. Temperature (f=620MHz) 32 OIP3, IIP3 (dBm) IIP3 VSWR 1.4 VSWRin 30 1.3 OIP3 28 1.2 26 1.1 VSWRout 24 -40 -20 0 20 40 o 60 80 100 1 -40 -20 0 20 40 o 60 80 100 Temperature ( C) Temperature ( C) - 11 - NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=1.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit IDD vs. Temperature (RF off) 10 20 K factor vs. Temperature (f=50MHz~20GHz) -40(oC) -20(oC) 0(oC) 8 15 25(oC) 60(oC) 85(oC) 95(oC) IDD (uA) 6 K factor -20 0 20 40 o 10 4 5 2 0 -40 0 60 80 100 0 5 10 15 20 Temperature ( C) Frequency (GHz) IDD vs. VCTL (RF off) 5 4 IDD (mA) 3 -40 (oC) 2 -20 ( C) 0 ( C) 25 ( C) o o o o o o 1 60 ( C) 85 ( C) 95 ( C) 0 0 0.5 1 1.5 2 VCTL (V) - 12 - NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25C, VDD=1.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit S11, S22 S21, S12 VSWRi, VSWRo Zin, Zout S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) - 13 - NJG1139UA2 ! APPLICATION CIRCUIT (Top View) RF IN L1 18nH 6 RFIN 5 GND VCTL VCTL 4 Logic circuit 1PIN INDEX 1 GND VDD RFOUT RF OUT 2 L2 27nH 3 C1 1000pF VDD (Top View) Parts List ! TEST PCB LAYOUT Parts ID L1, L2 VCTL C1 Notes MURATA LQP03T series MURATA GRM03 series L1 RF OUT PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50 ohm) PCB SIZE=14.0mmx14.0mm RF IN 1PIN INDEX L2 C1 VDD * Please place all external parts around the IC as close as possible. - 14 - NJG1139UA2 ! PACKAGE OUTLINE (EPFFP6-A2) Unit Substrate Terminal treat Molding material Weight (typ.) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. : mm : FR4 : Au : Epoxy resin : 0.855mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 15 - |
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