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| CMLM0574 Multi Discrete Module TM w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON N-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0574 is a Multi Discrete ModuleTM consisting of a single N-Channel Enhancement-mode MOSFET and a Low VF Schottky diode packaged in a space saving PICOminiTM SOT-563 surface mount case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MARKING CODE: 57C SOT-563 CASE * Device is Halogen Free by design FEATURES: * ESD protection up to 2kV * Low rDS(on) Transistor (560m MAX @ VGS=2.5V) * Low VF Schottky Diode (0.47V MAX @ 0.5A) SYMBOL PD PD PD TJ, Tstg JA SYMBOL VDS VGS ID SYMBOL VRRM IF IFRM IFSM 350 300 150 -65 to +150 357 UNITS mW mW mW C C/W UNITS V V mA UNITS V mA A A APPLICATIONS: * DC / DC Converters * Battery Powered Portable Equipment MAXIMUM RATINGS - CASE: (TA=25C) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS - Q1: (TA=25C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current MAXIMUM RATINGS - D1: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp1.0ms Peak Forward Surge Current, tp = 8.0ms 30 8.0 450 40 500 3.5 10 ELECTRICAL CHARACTERISTICS - Q1: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS=0, ID=10A 30 VGS(th) VDS=VGS, ID=250A 0.5 VSD VGS=0, IS=400mA 0.5 VGS=4.5V, ID=200mA 280 rDS(ON) rDS(ON) VGS=2.5V, ID=100mA 390 rDS(ON) VGS=1.8V, ID=75mA 550 gFS VDS =10V, ID=100mA 200 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 MAX 3.0 1.0 1.0 1.1 460 560 730 UNITS A A V V V m m m mS R1 (16-August 2010) CMLM0574 Multi Discrete Module TM SURFACE MOUNT SILICON N-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE ELECTRICAL SYMBOL Crss Ciss Coss ELECTRICAL SYMBOL IR IR BVR VF VF VF VF VF CT CHARACTERISTICS - Q1 - Continued: (TA=25C unless otherwise noted) TEST CONDITIONS TYP VDS=25V, VGS=0, f=1.0MHz 5.0 VDS=25V, VGS=0, f=1.0MHz 43 VDS=25V, VGS=0, f=1.0MHz 8.0 CHARACTERISTICS - D1: (TA=25C) TEST CONDITIONS VR=10V VR=30V IR=500A IF=100A IF=1.0mA IF=10mA IF=100mA IF=500mA VR=1.0V, f=1.0MHz MIN MAX 20 100 0.13 0.21 0.27 0.35 0.47 50 UNITS pF pF pF 40 UNITS A A V V V V V V pF SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Drain Q1 MARKING CODE: 57C R1 (16-August 2010) w w w. c e n t r a l s e m i . c o m |
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