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| Rev. 2.1 BSP296 SIPMOS Small-Signal-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Product Summary VDS 100 0.7 1.1 PG-SOT223 4 V A RDS(on) ID * Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 3 2 1 VPS05163 Type BSP296 BSP296 Package PG-SOT223 PG-SOT223 Tape and Reel Information L6433: 4000 pcs/reel L6327: 1000 pcs/reel Marking BSP296 BSP296 Packaging Non dry Non dry Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value 1.1 0.88 Unit A Pulsed drain current TA=25C I D puls dv/dt VGS Ptot 4.4 6 20 1B (>500V, <1000V) 1.79 -55... +150 55/150/56 W C kV/s V Reverse diode dv/dt IS=1.1A, VDS=80V, di/dt=200A/s, Tjmax=150C Gate source voltage ESD (JESD22-A114-HBM) Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j , Tstg Page 1 2009-08-18 Rev. 2.1 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) BSP296 Symbol min. RthJS RthJA - Values typ. max. 25 Unit K/W - 115 70 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID =250A Symbol min. V(BR)DSS Values typ. 1.4 max. 1.8 Unit 100 0.8 V Gate threshold voltage, VGS = VDS ID=400A VGS(th) I DSS Zero gate voltage drain current VDS=100V, VGS=0, Tj=25C VDS=100V, VGS=0, Tj=150C A 10 0.62 0.43 0.1 50 100 1 0.7 nA Gate-source leakage current VGS=20V, VDS=0 I GSS RDS(on) RDS(on) - Drain-source on-state resistance VGS=4.5V, ID=0.95A Drain-source on-state resistance VGS=10V, ID=1.1A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2009-08-18 Rev. 2.1 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD=50V, VGS=10V, ID=1.1A, RG=6 VDS2*ID*RDS(on)max, ID=0.88A VGS=0, VDS=25V, f=1MHz BSP296 Symbol Conditions min. 0.6 - Values typ. 1.2 291 53 29 5.2 7.9 37.4 21.4 max. 364 66 36 7.8 11.8 56.1 32.1 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Q gs Q gd VDD =80V, ID =1.1A - 0.7 5 13.8 2.7 0.9 7.5 17.2 - nC Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Qg VDD =80V, ID =1.1A, VGS =0 to 10V V(plateau) VDD =80V, ID = 1.1 A V IS TA=25C - 0.82 44.3 71.9 1.1 4.4 1.2 55.4 89.8 A Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0, IF = IS VR=50V, I F=lS , diF/dt=100A/s - V ns nC Page 3 2009-08-18 Rev. 2.1 1 Power dissipation Ptot = f (TA) 1.9 BSP296 BSP296 2 Drain current ID = f (TA) parameter: VGS 10 V 1.3 BSP296 W 1.6 1.4 A 1.1 1 P tot 0.9 ID 20 40 60 80 100 120 1.2 1 0.8 0.8 0.7 0.6 0.5 0.6 0.4 0.2 0 0 0.4 0.3 0.2 0.1 C 160 0 0 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C 10 1 BSP296 tp = 120.0s 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 2 BSP296 K/W A DS = V /I 10 1 D 10 DS (o n 0 Z thJA ) 1 ms 10 0 ID R 10 ms 10 -1 D = 0.50 0.20 10 -1 10 -2 0.10 0.05 0.02 10 -3 DC 10 -2 single pulse 0.01 10 0 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2009-08-18 Rev. 2.1 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS 2 BSP296 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS 2 2.1V 2.5V 2.7V 3.1V A R DS(on) 3.7V 3.9V 4.1V 1.6 4.3V 4.5V 1.4 10V 1.2 1 0.8 0.6 0.4 0.2 0 0 3.1V 1.4 2.7V 1.1 3.7V 3.9V 4.5V 5V 6V 10V ID 2.5V 0.8 2.1V 0.5 0.5 1 1.5 2 V 3 0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 A 2 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C 2 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 C 2 A S 1.2 gfs 2.4 2.8 3.2 V ID 1.2 0.8 0.8 0.4 0.4 0 0 0.4 0.8 1.2 1.6 2 4 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 A 2 VGS Page 5 ID 2009-08-18 Rev. 2.1 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 1.1 A, VGS = 10 V BSP296 BSP296 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =400A 2.4 2.8 V 2 2.4 2.2 R DS(on) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 C V GS(th) 1.8 1.6 1.4 1.2 1 98% typ. 98% 0.8 0.6 2% typ 0.4 0.2 180 0 -60 -20 20 60 100 Tj C Tj 160 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 1 BSP296 A pF C iss 10 0 C 10 2 Coss 10 -1 IF Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 V 30 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2009-08-18 Rev. 2.1 13 Typ. gate charge VGS = f (QG ); parameter: VDS , BSP296 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP296 ID = 1.1 A pulsed, Tj = 25 C 16 V BSP296 120 V 12 V (BR)DSS 0.5 VDS max 114 112 110 108 106 104 102 100 98 96 V GS 10 8 0.2 VDS max 6 0.8 V DS max 4 2 94 92 0 0 2 4 6 8 10 12 14 16 18 nC 21 90 -60 -20 20 60 100 C 180 QG Tj Page 7 2009-08-18 Rev. 2.1 BSP296 Page 8 2009-08-18 |
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