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DMG8822UTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
* * * * * * * Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * Case: TSSOP-8L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.039 grams (approximate)
NEW PRODUCT
D1
D2
G1
1 2 3 4 D S1 S1 G1 D S2 S2 G2 8 7 6 5
G2
S1
S2
TOP VIEW
BOTTOM VIEW
Top View
Internal Schematic
Pin Configuration
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage
@TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 70C ID IDM Value 20 8 4.9 3.9 31 Unit V V A A
Characteristic
Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
Steady State
Thermal Characteristics
Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25C Operating and Storage Temperature Range
Notes:
Symbol PD RJA TJ, TSTG
Value 0.87 143 -55 to +150
Unit W C/W C
1. Device mounted on FR-4 PCB with minimum recommended pad layout. 2. Repetitive rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
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(c) Diodes Incorporated
DMG8822UTS
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf Min 20 0.5 Typ 19 22 28 7 0.7 841 88 81 1.24 9.6 1.4 2.1 7.8 21.1 38.6 10.1 Max 1.0 100 0.9 25 29 37 0.9 Unit V A nA V m S V pF pF pF nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 8.2A VGS = 2.5V, ID = 3.3A VGS = 1.8V, ID = 2.0A VDS = 10V, ID = 4A Is = 2.25A, VGS = 0V VDS = 10V, VGS = 0V, f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 8.2A
NEW PRODUCT
Forward Transfer Admittance Diodes Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
VDD = 10V, VGS = 4.5V, RL = 10, RG = 6
5. Short duration pulse test used to minimize self-heating effects. 6. Guaranteed by design. Not subject to production testing.
30
VGS = 4.5V VGS = 3.5V VGS = 3.0V VGS = 2.0V
20
ID, DRAIN CURRENT (A)
20
VGS = 2.5V
VGS = 1.8V
ID, DRAIN CURRENT (A)
VGS = 2.8V
15
VDS = 5V
10
10
VGS = 1.5V
TA = 150C
5
TA = 125C TA = 85C TA = 25C TA = -55C
0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 2
0 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
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(c) Diodes Incorporated
DMG8822UTS
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.05
0.05
VGS = 4.5V
0.04
0.04
0.03
VGS = 1.8V
0.03
TA = 150C T A = 125C TA = 85C
NEW PRODUCT
0.02
VGS = 2.5V VGS = 4.5V
0.02
T A = 25C T A = -55C
0.01
0.01
0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30
0 0 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.7
0.04
0.03
1.3
VGS = 2.5V ID = 5A
VGS = 2.5V ID = 5A
1.1
VGS = 4.5V ID = 10A
0.02
VGS = 4.5V ID = 10A
0.9
0.01
0.7
0.5 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature
1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 IS, SOURCE CURRENT (A)
20 18 16 14 12 10 8 6 4 2
T A = 25C
0.8
ID = 1mA
0.6
ID = 250A
0.4
0.2
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0 -50
0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
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(c) Diodes Incorporated
DMG8822UTS
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
10,000
f = 1MHz
10,000
TA = 150C
C, CAPACITANCE (pF)
1,000
TA = 125C
1,000
Ciss
NEW PRODUCT
100
TA = 85C
100
Coss Crss
10
TA = 25C
10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 20
1 2 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 4
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05 D = 0.9 RJA(t) = r(t) * RJA RJA = 141C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
D = Single Pulse
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 /t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number DMG8822UTS-13
Notes:
(Note 7) Case TSSOP-8L Packaging 2500 / Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
8 5
Logo
N8822U
YY WW
1 4
Part no Xth week : 01~52 Year: "09" = 2009
Top View
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
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(c) Diodes Incorporated
DMG8822UTS
Package Outline Dimensions
D
See Detail C
E E1
e b
c Gauge plane
A D
A2 L A1
a
TSSOP-8L Dim Min Max Typ a 0.09 - - A 1.20 - - A1 0.05 0.15 - A2 0.825 1.025 0.925 b 0.19 0.30 - c 0.09 0.20 - D 2.90 3.10 3.025 e 0.65 - - E 6.40 - - E1 4.30 4.50 4.425 L 0.45 0.75 0.60 All Dimensions in mm
NEW PRODUCT
Detail C
Suggested Pad Layout
Y X C3 C2 G C1
Dimensions Value (in mm) X 0.45 Y 1.78 C1 7.72 C2 0.65 C3 4.16 G 0.20
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
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DMG8822UTS
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
6 of 6 www.diodes.com
June 2009
(c) Diodes Incorporated

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