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STX616
High voltage NPN power transistor
Features

High voltage capability High DC current gain Minimum lot-to-lot spread for reliable operation
Applications

Switching mode power supply Battery charger TO-92 TO-92AP
Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage withstand capability. The device is designed for use in SMPS and battery charger.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking X616 X616 Package TO-92 TO-92AP Packaging Bulk Ammopack
Order code STX616 STX616-AP
October 2007
Rev 2
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Electrical characteristics
STX616 STX616-AP
1
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 2.
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25C Storage temperature Max. operating junction temperature Value 980 500 12 1.5 2.4 0.8 1.2 2.8 -65 to 150 150 Unit V V V A A A A W C C
Table 3.
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-ambient __max __max Value 44.6 150 Unit C/W C/W
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STX616 STX616-AP
Electrical characteristics
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 4.
Symbol ICES
Electrical characteristics
Parameter Collector cut-off current (VBE =0) Collector-emitter sustaining voltage (IB = 0) Emitter-base voltage (IC = 0) Collector-emitter saturation voltage Base-emitter saturation voltage Test conditions VCE = 980V VCE = 980V IC = 10mA Tc = 125C 500 Min. Typ. Max. 50 0.5 Unit A mA
VCE(sus) (1)
V
VEBO VCE(sat) (1)
IE = 1mA IC = 0.2A IC = 1A IC = 0.2A IC = 1A IC = 500A IB = 40mA IB = 200mA IB = 40mA IB = 200mA VCE = 2V V CE = 5V V CE = 5V VCE = 5V
12 0.5 1 1 1.4 17 25 12 4
V V V V V
VBE(sat) (1)
hFE (1)
DC current gain
IC = 200mA IC = 500mA IC = 1.5A
ton ts tf ton ts tf ts tf ts tf
RESISTIVE LOAD Turn-on time Storage time Fall time RESISTIVE LOAD Turn-on time Storage time Fall time INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time
VCC = 250V IB1 = 65mA
IC = 250mA IB2 = -130mA
0.2 5 0.65
s s s s s s s s s s
VCC = 250V
IC = 0.8A
1 2.5 0.35
IB1 = 160mA IB2 = -0.4A
Vcl = 300V IB1 = 65mA L = 200H Vcl = 300V IB1 = 160mA L = 200H
IC = 250mA IB2 = -130mA IC = 0.8A IB2 = -0.4A 2.5 0.25 5 0.5
Note (1) Pulsed duration = 300 s, duty cycle 1.5%
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Package mechanical data
STX616 STX616-AP
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STX616 STX616-AP
Package mechanical data
TO-92 BULK SHIPMENT MECHANICAL DATA
DIM.
mm. MIN. 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5O TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56
A b D E e e1 L R S1 W V
0102782 C
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Package mechanical data
STX616 STX616-AP
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA
mm. TYP
DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P
MIN.
12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.50 15.50 3.80
12.70 6.35 2.54 18.00 6.00 9.00
16.00 4.00
MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00
3.00 -1.00
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STX616 STX616-AP
Revision history
4
Revision history
Table 5.
Date 06-Jun-2007 22-Oct-2007
Document revision history
Revision 1 2 Initial release. Added TO-92AP package. Changes
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STX616 STX616-AP
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