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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 300 Volts APPLICATION * Video out to drive color CRT * Other high voltage applications. CHT42PT CURRENT 0.5 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) * Low voltage (Max.=300V) . * High saturation current capability. (1) (3) (2) CONSTRUCTION * NPN High Voltage Transistor .055 (1.40) .047 (1.20) MARKING * T42 .045 (1.15) .033 (0.85) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1) B C (3) E (2) .019 (0.50) * Small surface mounting type. (SOT-23) * Low current (Max.=500mA). * Suitable for high packing density. Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-4 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - - Tamb 25 C; note 1 - MIN. MAX. 300 300 6 500 500 100 350 +150 150 +150 V V V UNIT mA mA mA mW C C C -55 - -55 RATING CHARACTERISTIC CURVES ( CHT42PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 2 0 0 V IC = 0; VEB = 6 V VCE = 10V; note 1; IC = 1.0 mA IC = 10 mA IC = 30 mA VCEsat VBEsat Ccb fT Note 1. Pulse test: tp 300 s; 0.02. collector-emitter saturation voltage base-emitter saturation voltage collector-base capacitance transition frequency IC = 20 mA; IB = 2 mA IC = 20 mA; IB = 2 mA IE = ie = 0; VCB = 2 0 V ; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz 25 40 40 - - - 50 - - 300 500 900 3 - mV mV pF MHz - - MIN. MAX. 0.1 0.1 UNIT uA uA RATING CHARACTERISTIC CURVES ( CHT42PT ) DC Current Gain vs Collector Current 140 h FE - DC CURRE NT GAIN 120 100 80 60 40 20 0.1 VCE = 5V - 40 C 25 C 125 C VCESAT - COLLE CTOR-EMITTER VOLTAGE (V) Collector-Emitter Saturation Voltage vs Collector Current 0.3 = 10 0.25 0.2 0.15 25 C 125 C 0.1 0.05 0.1 - 40 C 1 10 I C - COLLECTOR CURRENT (mA) 100 1 10 I C - COLLECTOR CURRENT (mA) 100 V BE(O N)- BASE-E MITTER ON VOLTAGE (V) V BESAT - BASE -EMITTER VOLTAG E (V) Base-Emitter Saturation Voltage vs Collector Current 1 Base-Emitter ON Voltage vs Collector Current 1 VC E = 1V 0.8 - 40 C 0.8 - 40 C 0.6 25 C 0.6 25 C 0.4 125 C 0.4 125 C = 10 0.2 0.1 IC 1 10 - COLLE CTOR CURRENT ( mA) 100 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR CURRENT (nA) 100 Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage 100 50 CAPACITANCE (pF) 20 10 5 2 C cb Ceb V CB = 150V 10 1 25 1 50 75 100 125 T A - AMBIENT TEMPE RATURE ( C) 150 1 10 100 REVERSE BIAS VOLTAGE (V) 1000 RATING CHARACTERISTIC CURVES ( CHT42PT ) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 |
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