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DMG8880LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features * * * * * * * Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * * Case: TO252-3L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.33 grams (approximate) D TO252-3L D G D G Top View S S Equivalent Circuit PIN OUT -TOP VIEW Ordering Information (Note 3) Part Number DMG8880LK3-13 Notes: Case TO252-3L Packaging 2500 / Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information G8880L YYWW G8880L = Product Type Marking Code = Manufacturer's Marking YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 ~ 53) DMG8880LK3 Document number: DS32052 Rev. 3 - 2 1 of 6 www.diodes.com October 2010 (c) Diodes Incorporated DMG8880LK3 Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 10V Continuous Drain Current (Note 5) VGS = 10V Pulsed Drain Current (Note 6) Steady State Steady State TA = 25C TA = 85C TA = 25C TA = 85C Symbol VDSS VGSS ID ID IDM Value 30 20 11 8 16.5 12 48 Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25C (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25C (Note 5) Operating and Storage Temperature Range Symbol PD RJA PD RJA TJ, TSTG Value 1.68 74.3 4.1 30.8 -55 to +150 Unit W C/W W C/W C Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Min 30 1.0 - Typ 1.5 7.0 9.6 22 0.7 1289 187 162 0.97 27.6 14.4 3.6 4.9 7.04 17.52 36.13 19.67 Max 1.0 100 2.0 9.3 14 1.0 - Unit V A nA V m S V pF pF pF nC nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 11.6A VGS = 4.5V, ID = 10.7A VDS = 15V, ID = 15A VGS = 0V, ISD = 2.1A VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 11.6A, Ig = 1.0mA VGS = 5V, VDS = 15V, ID = 11.6A VDD = 15V, VGS = 10V, RG = 11, ID = 11.6A, RL = 1.3 4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 5. Device mounted on 2" x 2" FR-4 PCB with high coverage 2oz. copper, single sided. 6. Repetitive rating, pulse width limited by junction temperature and current limited by package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG8880LK3 Document number: DS32052 Rev. 3 - 2 2 of 6 www.diodes.com October 2010 (c) Diodes Incorporated DMG8880LK3 50 VGS = 8.0V 30 40 ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 3.5V 25 ID, DRAIN CURRENT (A) VDS = 5V 20 30 15 TA = 150C TA = 125C TA = 85C TA = 25C TA = -55C 20 VGS = 3.2V 10 10 VGS = 2.2V VGS = 3.0V 5 VGS = 2.5V 0 0 0.5 1.0 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 2.0 0 0 1 2 3 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.020 0.03 VGS = 4.5V 0.015 0.02 TA = 150C TA = 125C TA = 85C 0.010 VGS = 4.5V VGS = 8.0V 0.01 TA = 25C TA = -55C 0.005 0 0 10 20 30 40 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 50 0 0 10 15 20 25 30 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 VGS = 10V ID = 20A RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.7 0.025 0.020 1.3 0.015 VGS = 4.5V ID = 10A 1.1 VGS = 4.5V ID = 10A 0.010 0.9 0.7 0.005 VGS = 10V ID = 20A 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature DMG8880LK3 Document number: DS32052 Rev. 3 - 2 3 of 6 www.diodes.com October 2010 (c) Diodes Incorporated DMG8880LK3 2.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 18 2.0 IS, SOURCE CURRENT (A) 16 14 12 10 8 6 4 2 T A = 25C 1.6 ID = 1mA 1.2 ID = 250A 0.8 0.4 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 10,000 f = 1MHz 0 -50 -25 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 TA = 150C C, CAPACITANCE (pF) 1,000 TA = 125C 1,000 Ciss 100 TA = 85C 10 TA = 25C Coss Crss 100 1 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 30 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 76C/W P(pk) D = 0.02 0.01 D = 0.01 D = 0.005 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 10 100 1,000 DMG8880LK3 Document number: DS32052 Rev. 3 - 2 4 of 6 www.diodes.com October 2010 (c) Diodes Incorporated DMG8880LK3 Package Outline Dimensions E b3 L3 D b2 b e L4 A1 H A a L SEATING PLANE C2 TO252-3L Dim Min Typ Max A 2.19 2.29 2.39 A1 0.97 1.07 1.17 b 0.64 0.76 0.88 b2 0.76 0.95 1.14 b3 5.21 5.33 5.50 C2 0.45 0.51 0.58 D 6.00 6.10 6.20 E 6.45 6.58 6.70 e 2.286 Typ. H 9.40 9.91 10.41 L 1.40 1.59 1.78 L3 0.88 1.08 1.27 L4 0.64 0.83 1.02 a 0 10 All Dimensions in mm Suggested Pad Layout X2 Y2 C Y1 Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 X1 E1 DMG8880LK3 Document number: DS32052 Rev. 3 - 2 5 of 6 www.diodes.com October 2010 (c) Diodes Incorporated DMG8880LK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com DMG8880LK3 Document number: DS32052 Rev. 3 - 2 6 of 6 www.diodes.com October 2010 (c) Diodes Incorporated |
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