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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor DESCRIPTION *With TO-3 package *Respectively complement to type MJ4035 *DARLINGTON *High DC current gain APPLICATIONS *For use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL VCBO VCEO VEBO IC IB B MJ4032 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VALUE -100 -100 UNIT V PC TJ Tstg Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature w ww scs .i -5 -16 -0.5 150 200 -55~200 MAX 1.17 .cn mi e V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ4032 MAX UNIT VCEO Collector-Emitter Breakdown Voltage IC=-100mA; IB= 0 B -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-10A; IB=-40mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-16A; IB=-80mA -4 V VBE(sat) Base-Emitter Saturation Voltage IC=-5A; IB=-400mA -3 V VBE(on) Base-Emitter On voltage IC=-10A ; VCE=-3V VCB=-100V; RBE= 1K; VCB=-100V; RBE= 1K; TC= 150 -3 -1 -5 -3 V ICER Collector Cutoff Current ICEO Collector Cutoff current IEBO Emitter Cut-off current hFE DC Current Gain w w scs .i w VCE=-50V; IB=0 VEB=-5V; IC= 0 IC=-10A ; VCE=-3V .cn mi e mA mA -5 mA 1000 isc Websitewww.iscsemi.cn 2 |
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