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| SMD Type N-Channel Logic Level Enhancement Mode Field Effect Transistor KDB6030L TO-263 Features 52A, 30 V. RDS(ON) = 0.0135 RDS(ON) = 0.020 @ VGS = 10 V @ VGS = 4.5 V + .2 8 .7 -00.2 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low Crss (typical 175 pF). Fast switching speed. +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 Low gate charge (typical 34 nC). 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Drain Current Pulsed Power dissipation @ TC=25 Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient PD PD TJ, TSTG R R JC JA Symbol VDSS VGS ID Rating 30 20 52 156 75 0.5 -65 to 175 2 62.5 Unit V V A A W W/ /W /W 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KDB6030L Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy * Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSSF IGSSR VGS(th) Symbol WDSS IAR BVDSS VGS = 0 V, ID = 250 ID = 250 A Testconditons VDD = 15 V, ID = 21A Transistors IC Min Typ Max 150 21 Unit mJ A V 30 37 10 100 -100 1 1.6 -4 0.0095 0.0135 0.014 0.015 60 15 37 1230 0.023 0.02 3 A, Referenced to 25 mV/ A nA nA V mV/ VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 ID = 250 A A, Referenced to 25 VGS = 10 V, ID = 26 A Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 26 A,TJ = 125 VGS = 4.5 V, ID =21 A, On-State Drain Current On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current * Drain-Source Diode Forward Voltage Drain-Source Diode Forward Voltage * Pulse Test: Pulse Width 300 s, Duty Cycle ID(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VSD 2.0% VGS = 0 V, IS = 26 A * VGS = 0 V, IS = 26 A *TJ=125 VDS = 12 V, ID = 26A,VGS = 10 V * VDD = 15 V, ID = 52 A,VGS = 10 V, RGEN = 24 * VDS = 15 V, VGS = 0 V,f = 1.0 MHz VGS = 10 V, VDS = 10 V VGS = 4.5 V, VDS = 10 V VDS = 10 V, ID = 26 A m A S pF pF pF 15 210 46 27 46 ns ns ns ns nC nC nC 52 A V V 640 175 7.6 150 29 17 34 6 8 0.91 0.8 1.3 1.2 2 www.kexin.com.cn |
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