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| FDMC86102 N-Channel Power Trench(R) MOSFET July 2009 FDMC86102 N-Channel Power Trench(R) MOSFET 100 V, 20 A, 24 m Features Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A Max rDS(on) = 38 m at VGS = 6 V, ID = 5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor`s advanced Power Trench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC - DC Conversion Top Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 33 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 100 20 20 29 7 30 72 41 2.3 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 53 C/W Package Marking and Ordering Information Device Marking FDMC86102 Device FDMC86102 Package Power 33 Reel Size 13'' Tape Width 12 mm Quantity 3000 units (c)2009 Fairchild Semiconductor Corporation FDMC86102 Rev.C 1 www.fairchildsemi.com FDMC86102 N-Channel Power Trench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V 100 69 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 7 A VGS = 6 V, ID = 5 A VGS = 10 V, ID = 7 A, TJ = 125 C VDD = 10 V, ID = 7 A 2.0 3.1 -9 19.4 26.8 32.8 19 24 38 41 S m 4.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 725 175 15 0.5 965 235 25 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 50 V ID = 7 A VDD = 50 V, ID = 7 A, VGS = 10 V, RGEN = 6 8 4 14 4 13 8 3.7 3.6 17 10 25 10 18 11 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 7 A VGS = 0 V, IS = 2 A IF = 7 A, di/dt = 100 A/s (Note 2) (Note 2) 0.81 0.75 44 40 1.3 1.2 70 65 V ns nC NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 53 C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0 %. 3. Starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 12 A, VDD = 90 V, VGS = 10 V. FDMC86102 Rev.C 2 www.fairchildsemi.com FDMC86102 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 25 ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 5.5 V VGS = 10 V VGS = 6 V VGS = 5 V 5 VGS = 4.5 V 4 VGS = 5 V 20 15 10 5 0 0.0 3 VGS = 5.5 V 2 VGS = 6 V VGS = 4.5 V 1 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 10 V 0.5 1.0 1.5 2.0 2.5 3.0 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 80 SOURCE ON-RESISTANCE (m) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 7 A VGS = 10 V 70 60 50 ID = 7 A rDS(on), DRAIN TO TJ = 125 oC 40 30 20 TJ = 25 oC -50 -25 0 25 50 75 100 125 150 10 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 30 25 ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 60 IS, REVERSE DRAIN CURRENT (A) VGS = 0 V 10 TJ = 150 oC TJ = 25 oC VDS = 5 V 20 15 TJ = 150 oC 1 0.1 10 TJ = 25 oC 5 TJ = -55 oC 0.01 TJ = -55 oC 0 2 3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC86102 Rev.C 3 www.fairchildsemi.com FDMC86102 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 7 A VDD = 50 V 1000 Ciss CAPACITANCE (pF) 8 VDD = 25 V VDD = 75 V 6 4 2 Coss 100 f = 1 MHz VGS = 0 V Crss 0 0 2 4 6 8 10 12 14 Qg, GATE CHARGE (nC) 10 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 30 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 9 8 7 6 5 4 3 2 25 20 Limited by Package VGS = 10 V VGS = 6 V TJ = 25 oC 15 10 5 RJC = 3 C/W o TJ = 100 oC TJ = 125 oC 1 0.01 0.1 1 10 30 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 50 10 100 s 1 ms Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) VGS = 10 V ID, DRAIN CURRENT (A) 100 1 THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms 1s 10 s DC 10 SINGLE PULSE RJA = 125 oC/W 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 oC 1 0.01 0.01 TA = 25 oC 0.1 1 10 100 500 0.5 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMC86102 Rev.C 4 www.fairchildsemi.com FDMC86102 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE RJA = 125 C/W o t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -2 0.001 -4 10 10 -3 10 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMC86102 Rev.C 5 www.fairchildsemi.com FDMC86102 N-Channel Power Trench(R) MOSFET Dimensional Outline and Pad Layout FDMC86102 Rev.C 6 www.fairchildsemi.com FDMC86102 N-Channel Power Trench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench(R) Auto-SPMTM F-PFSTM The Power Franchise(R) PowerXSTM Build it NowTM FRFET(R) (R) Global Power ResourceSM Programmable Active DroopTM CorePLUSTM Green FPSTM QFET(R) CorePOWERTM TinyBoostTM QSTM Green FPSTM e-SeriesTM CROSSVOLTTM TinyBuckTM Quiet SeriesTM CTLTM GmaxTM TinyLogic(R) RapidConfigureTM Current Transfer LogicTM GTOTM TINYOPTOTM EcoSPARK(R) IntelliMAXTM TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM TRUECURRENTTM* SPM(R) MicroPakTM (R) SerDesTM STEALTHTM MillerDriveTM (R) Fairchild SuperFETTM MotionMaxTM (R) Fairchild Semiconductor SuperSOTTM-3 Motion-SPMTM FACT Quiet SeriesTM SuperSOTTM-6 UHC(R) OPTOLOGIC(R) (R) FACT OPTOPLANAR(R) Ultra FRFETTM SuperSOTTM-8 (R) (R) FAST UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDMC86102 Rev.C 7 www.fairchildsemi.com |
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