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| ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary Device Q1 Q2 V(BR)DSS (V) 30 -30 QG (nC) 12.9 12.7 RDS(on) () 0.024 @ VGS= 10V 0.039 @ VGS= 4.5V 0.045 @ VGS= -10V 0.080 @ VGS= -4.5V ID (A) 7.3 5.7 5.3 4 Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for power management and battery charging functions. Features * * * Low on-resistance 4.5V gate drive capability Low profile SOIC package D1 D2 Applications * * * * * DC-DC Converters SMPS Load switching switches Motor control Backlighting G1 S1 Q1 N-Channel G2 S2 Q2 P-Channel Ordering information Device ZXMC3F31DN8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 S1 G1 S2 D1 N P D1 D2 D2 Device marking ZXMC 3F31 G2 Top view Issue 1 - September 2008 (c) Diodes Incorporated 2008 1 www.zetex.com www.diodes.com ZXMC3F31DN8 Absolute maximum ratings Parameter Symbol Nchannel Q1 30 Pchannel Q2 -30 Unit Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25C @ VGS= 10V; TA=70C @ VGS= 10V; TA=25C @ VGS= 10V; TA=25C @ VGS= 10V; TL=25C Pulsed Drain current (c) (b)(d) (b)(d) (b)(d) (a)(d) (a)(e) (f)(d) VDSS VGS ID V V A 20 7.3 5.9 5.7 6.8 7.8 20 5.3 4.3 4.1 4.9 5.7 23 3.2 23 1.25 10 1.8 14 2.1 17 2.35 19 IDM IS ISM PD PD PD PD Tj, Tstg 33 3.5 33 A A A W mW/C W mW/C W mW/C W mW/C C Continuous Source current (Body diode) Pulsed Source current (Body diode) Power dissipation at TA =25C Linear derating factor Power dissipation at TA =25C Linear derating factor Power dissipation at TA =25C Linear derating factor Power dissipation at TL =25C Linear derating factor (a)(d) (a)(e) (b)(d) (f) (d) (c)(d) Operating and storage temperature range -55 to 150 Thermal resistance Parameter Junction to ambient Junction to ambient Junction to ambient Junction to lead NOTES: (a) (b) (c) (d) (e) (f) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. Mounted on FR4 PCB measured at t 10 sec. Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us - pulse width limited by maximum junction temperature. For a device with one active die. For a device with two active die running at equal power. Thermal resistance from junction to solder-point (at the end of the drain lead). Symbol (a)(d) (a)(e) (b)(d) Value 100 70 60 53 Unit C/W C/W C/W C/W RJA RJA RJA RJL (f) (d) Issue 1 - September 2008 (c) Diodes Incorporated 2008 2 www.zetex.com www.diodes.com ZXMC3F31DN8 Thermal characteristics RDS(ON) 1 DC 1s 100ms Note (a)(d) 10ms 1ms 100us -ID Drain Current (A) ID Drain Current (A) 10 Limited RDS(ON) 10 Limited 1 DC 1s 100ms Note (a)(d) 10ms 1ms 100us 100m 100m 10m 0.1 NPN @ Single Pulse, Tamb=25C 10m 0.1 PNP @ Single Pulse, T amb=25C 1 10 1 10 VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) N-channel Safe Operating Area 100 80 60 40 D=0.2 D=0.5 P-channel Safe Operating Area 2.0 Max Power Dissipation (W) Thermal Resistance (C/W) 1.5 Two active die One active die 1.0 Single Pulse D=0.05 D=0.1 20 0 100 0.5 1m 10m 100m 1 10 100 1k 0.0 0 25 50 75 100 125 150 Pulse Width (s) Temperature (C) Transient Thermal Impedance Single Pulse T amb=25C Derating Curve Maximum Power (W) 100 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation Issue 1 - September 2008 (c) Diodes Incorporated 2008 3 www.zetex.com www.diodes.com ZXMC3F31DN8 Q1 N-channel electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Static Drain-Source breakdown voltage Zero Gate voltage Drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source () on-state resistance * Forward ( ) () Transconductance * Dynamic () Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs Min. 30 Typ. Max. Unit V Conditions ID = 250A, VGS=0V VDS=30V, VGS=0V VGS=20V, VDS=0V ID= 250A, VDS=VGS VGS= 10V, ID= 7.0A VGS= 4.5, ID= 6.0A VDS= 15V, ID= 7.0A 0.5 100 1.0 3.0 0.024 0.039 16.5 A nA V S Input capacitance Output capacitance Reverse transfer capacitance Switching Rise time Turn-off delay time Fall time Total Gate charge Gate-Source charge Gate-Drain charge Source-Drain diode Diode forward voltage Reverse recovery time () () () Ciss Coss Crss 608 132 72 pF pF pF VDS= 15V, VGS=0V f=1MHz Turn-on-delay time td(on) tr td(off) tf Qg Qgs Qgd 2.9 3.3 16 8 12.9 2.5 2.52 ns ns ns ns nC nC nC VDS= 15V, VGS= 10V ID= 7A VDD= 15V, VGS=10V ID= 1A RG 6.0, * VSD trr Qrr () 0.82 12 4.8 1.2 V ns nC IS= 1.7A,VGS=0V IS= 2.2A,di/dt=100A/s () Reverse recovery charge NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. ()Switching characteristics are independent of operating junction temperature. ()For design aid only, not subject to production testing Issue 1 - September 2008 (c) Diodes Incorporated 2008 4 www.zetex.com www.diodes.com ZXMC3F31DN8 Q1 Typical characteristics 10V 5V ID Drain Current (A) 3.5V 3V ID Drain Current (A) 10 4V T = 150C 10V 4V 3.5V 3V VGS 10 1 1 2.5V 0.1 T = 25C 0.1 2V 2.5V VGS 0.01 0.01 0.1 1.5V 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) 1 10 Output Characteristics 1.6 Output Characteristics VGS = 10V ID = 7A RDS(on) Normalised RDS(on) and VGS(th) 10 VDS = 10V ID Drain Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 T = 150C 1 T = 25C VGS = VDS ID = 250uA VGS(th) 0.1 Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance (W) 1000 T = 25C VGS Gate-Source Voltage (V) 2 3 4 Tj Junction Temperature (C) 50 100 150 Normalised Curves v Temperature 10 1 0.1 0.01 Vgs = -3V T = 150C VGS 100 10 1 0.1 0.01 0.01 3V 3.5V 4V 4.5V 10V ISD Reverse Drain Current (A) 2.5V T = 25C 0.1 On-Resistance v Drain Current ID Drain Current (A) 1 10 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 1E-3 0.2 0.4 0.6 0.8 1.0 Issue 1 - September 2008 (c) Diodes Incorporated 2008 5 www.zetex.com www.diodes.com ZXMC3F31DN8 Q1 Typical characteristics -cntd. 900 VGS Gate-Source Voltage (V) 800 VGS = 0V f = 1MHz CISS COSS CRSS 700 600 500 400 300 200 100 0 1 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 10 10 9 8 7 6 5 4 3 2 1 0 ID = 7A C Capacitance (pF) VDS = 15V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test circuits Issue 1 - September 2008 (c) Diodes Incorporated 2008 6 www.zetex.com www.diodes.com ZXMC3F31DN8 Q2 P-channel electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Static Drain-Source breakdown voltage Zero Gate voltage Drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source () on-state resistance * Forward ( ) () Transconductance * Dynamic () Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs Min. -30 Typ. Max. Unit V Conditions ID = -250A, VGS=0V VDS=-30V, VGS=0V VGS=20V, VDS=0V ID= -250A, VDS=VGS VGS= -10V, ID= -5.0A VGS= -4.5V, ID= -4.0A VDS= -15V, ID= -5.0A -5.0 -100 -1.0 -3.0 0.045 0.080 14 A nA V S Input capacitance Output capacitance Reverse transfer capacitance Switching Rise time Turn-off delay time Fall time Total Gate charge Gate-Source charge Gate-Drain charge Source-Drain diode Diode forward voltage Reverse recovery time () () () Ciss Coss Crss 670 126 70 pF pF pF VDS= -15V, VGS=0V f=1MHz Turn-on-delay time td(on) tr td(off) tf Qg Qgs Qgd 1.9 3 30 21 12.7 2 2.4 ns ns ns ns nC nC nC VDS= -15V, VGS= -10V ID= -5A VDD= -15V, VGS=-10V ID= -1A RG 6.0, * VSD trr Qrr () -0.82 16.5 11.5 -1.2 V ns nC IS= -2A,VGS=0V IS= -2.1A,di/dt=100A/s () Reverse recovery charge NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. ()Switching characteristics are independent of operating junction temperature. ()For design aid only, not subject to production testing Issue 1 - September 2008 (c) Diodes Incorporated 2008 7 www.zetex.com www.diodes.com ZXMC3F31DN8 Typical characteristics T = 25C 10V 4.5V 4V T = 150C 10V 4V 3.5V 3V 2.5V 2V -ID Drain Current (A) -ID Drain Current (A) 10 3.5V 3V 10 1 2.5V 1 0.1 VGS VGS 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 0.1 0.1 -VDS Drain-Source Voltage (V) 1 10 Output Characteristics 1.6 10 Output Characteristics VGS = 10V ID = 5A RDS(on) Normalised RDS(on) and VGS(th) VDS = 10V -ID Drain Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 T = 150C 1 T = 25C VGS = VDS ID = 250uA VGS(th) 0.1 2.0 Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () 2.5V -VGS Gate-Source Voltage (V) 2.5 3.0 3.5 Tj Junction Temperature (C) 50 100 150 Normalised Curves v Temperature 10 1 0.1 0.01 Vgs = 0V T = 150C T = 25C VGS 10 3V 3.5V 4V 1 -ISD Reverse Drain Current (A) T = 25C 0.1 4.5V 10V 0.01 0.01 0.1 On-Resistance v Drain Current -ID Drain Current (A) 1 10 1E-3 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 0.2 0.4 0.6 0.8 1.0 Issue 1 - September 2008 (c) Diodes Incorporated 2008 8 www.zetex.com www.diodes.com ZXMC3F31DN8 Typical characteristics 1000 -VGS Gate-Source Voltage (V) VGS = 0V C Capacitance (pF) 800 600 400 200 0 CISS f = 1MHz COSS CRSS -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 1 10 10 9 8 7 6 5 4 3 2 1 0 ID = 5A VDS = 15V 0 Q - Charge (nC) 5 10 15 Gate-Source Voltage v Gate Charge Test circuits Issue 1 - September 2008 (c) Diodes Incorporated 2008 9 www.zetex.com www.diodes.com ZXMC3F31DN8 Package outline SO8 SO8 Package Information DIM Inches Min. Max. 0.069 0.010 0.197 0.244 0.157 0.050 Millimeters Min. 1.35 0.10 4.80 5.80 3.80 0.40 Max. 1.75 0.25 5.00 6.20 4.00 1.27 DIM Inches Min. Max. Millimeters Min. Max. A A1 D H E L 0.053 0.004 0.189 0.228 0.150 0.016 e b c U h - 0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 - 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 - Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 1 - September 2008 (c) Diodes Incorporated 2008 10 www.zetex.com www.diodes.com ZXMC3F31DN8 Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office. Quality of product Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" Future device intended for production at some point. Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Diodes Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Diodes Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Diodes Incorporated 15660 N. Dallas Parkway Suite 850, Dallas TX75248, USA Telephone (1) 972 385 2810 www.diodes.com (c) 2008 Published by Diodes Incorporated Issue 1 - September 2008 (c) Diodes Incorporated 2008 11 www.zetex.com www.diodes.com |
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