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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL216
DESCRIPTION *Collector-Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) *High Switching Speed
APPLICATIONS *Designed for use in lighting applications and low cost switchmode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCES VCEO VEBO IC ICM IB
B
PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage
VALUE 1600 800 9
UNIT V
Collector Current-Continuous
Collector Current-peak tp<5ms Base Current-Continuous
ww w
scs .i
4 6 2 4 90 150 -65~150
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V V A A A A W
IBM PC Ti Tstg
Base Current-peak tp<5ms Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL Rth j-c Rth j-A PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.39 62.5 UNIT /W /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICES ICEO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 100mA; L= 25mH IE= 10mA; IC= 0 IC= 1A; IB= 0.2A
B
BUL216
MIN 800 9
TYP.
MAX
UNIT V V
1.0 3.0 1.2 1.2 0.1 0.5 0.25 40
V V V V mA mA
IC= 2A; IB= 0.66A
B
IC= 1A; IB= 0.2A
B
IC= 2A; IB= 0.66A
B
VCE= 1600V; VBE= 0 VCE= 1600V; VBE= 0, TC= 125
Switching Times, Inductive Load ts tf Storage Time Fall Time
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scs .i
VCE= 800V; IB= 0
IC= 0.4A; VCE= 5V
IC= 10mA; VCE= 5V
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12 10
IC= 1.5A; VCL= 250V; L= 200H; IB1= 0.5A; VBE(off)= -5V; RBB= 0
3.3 0.72
s s
isc Websitewww.iscsemi.cn

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Price & Availability of BUL216

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216 72K5961	STMicroelectronics	Transistor, Npn, 800V, 4A, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:800V; Continuous Collector Current:4A; Power Dissipation:90W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes \|Stmicroelectronics BUL216	10000: USD0.863 2500: USD0.913 1000: USD1.13 500: USD1.3 100: USD1.51 10: USD1.78 1: USD2.17	22116
BUL216 84AC0909	STMicroelectronics	Ptd High Voltage Rohs Compliant: Yes \|Stmicroelectronics BUL216	2500: USD0.823 1000: USD0.989	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216 497-2638-5-ND	STMicroelectronics	TRANS NPN 800V 4A TO220	10000: USD0.9965 5000: USD1.03062 2000: USD1.07088 1000: USD1.12724 500: USD1.32854 100: USD1.5701 50: USD1.9082 1: USD2.38	737

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216 BUL216	STMicroelectronics	Trans GP BJT NPN 800V 4A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: BUL216)	100000: USD1.04035 10000: USD1.06426 8000: USD1.08818 6000: USD1.11209 4000: USD1.13601 2000: USD1.15993 1000: USD1.18384	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216 511-BUL216	STMicroelectronics	Bipolar Transistors - BJT NPN Hi-Volt Fast Sw	1: USD2.23 10: USD1.82 100: USD1.52 250: USD1.5 500: USD1.29 1000: USD1.15 2000: USD0.996	2687

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216	STMicroelectronics	BUL216 Series NPN 800 V 4 A Fast-Switching Power Transistor - TO-220	2000: USD0.975 1000: USD1.03 500: USD1.06 150: USD1.1 50: USD1.15	650
BUL216	STMicroelectronics	BUL216 Series NPN 800 V 4 A Fast-Switching Power Transistor - TO-220	2000: USD0.975 1000: USD1.03 500: USD1.06 150: USD1.1 50: USD1.15	0
BUL216	STMicroelectronics	BUL216 Series NPN 800 V 4 A Fast-Switching Power Transistor - TO-220	2000: USD0.975 1000: USD1.03 500: USD1.06 150: USD1.1 50: USD1.15	0
BUL216	STMicroelectronics	BUL216 Series NPN 800 V 4 A Fast-Switching Power Transistor - TO-220	2000: USD0.975 1000: USD1.03 500: USD1.06 150: USD1.1 50: USD1.15	0
BUL216	STMicroelectronics	BUL216 Series NPN 800 V 4 A Fast-Switching Power Transistor - TO-220	2500: USD0.95 1000: USD1.03 250: USD1.07 100: USD1.11 1: USD1.16	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216 81012664	STMicroelectronics	Trans GP BJT NPN 800V 4A 9000mW 3-Pin(3+Tab) TO-220AB Tube	10000: USD0.7341 2500: USD0.7362 1000: USD0.7859 500: USD0.8742 100: USD0.9896 14: USD1.1751	1960
BUL216 30993107	STMicroelectronics	Trans GP BJT NPN 800V 4A 9000mW 3-Pin(3+Tab) TO-220AB Tube	500: USD0.58 200: USD0.62 100: USD0.6538 50: USD0.7637 35: USD0.8987	771

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216	STMicroelectronics			85

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216	SGS Thomson	Bipolar Junction Transistor, NPN Type, TO-220VAR	15: USD1.0968 4: USD1.4624 1: USD1.828	17

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216 BUL216	STMicroelectronics	Transistor: NPN; bipolar; 800V; 4A; 90W; TO220	1000: USD1.08 500: USD1.18 250: USD1.29 100: USD1.43 50: USD1.54 10: USD1.78 1: USD2.07	167

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216 BUL216	STMicroelectronics	Trans GP BJT NPN 800V 4A 3-Pin(3+Tab) TO-220 Tube (Alt: BUL216)		2350

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216 C1S730200414140	STMicroelectronics	Trans GP BJT NPN 800V 4A 3-Pin(3+Tab) TO-220 Tube	500: USD0.464 200: USD0.496 100: USD0.523 50: USD0.611 10: USD0.719 5: USD0.961	771

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216	STMicroelectronics			22343

Part #	Manufacturer	Description	Price	BuyNow Qty.
BUL216	STMicroelectronics	BUL216		0

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