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BLF3G22-30
UHF power LDMOS transistor
Rev. 01 -- 21 June 2007 Product data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation 2-tone 2-carrier
[1] [2]
f1 (MHz) 2170
f2 (MHz) 2170.1 2165
VDS (V) 28 28
IDq (mA) 450 450
PL(PEP) (W) 36 -
PL(AV) (W) 6
Gp (dB) 14 15
D (%) 34 21
IMD (dBc) -24 -
ACPR (dBc) -42[2]
IMD3 (dBc) -38
W-CDMA[1]
2115
3GPP test model 1; 64 channels with 66 % clippings Measured within 10 kHz bandwidth
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Excellent back off linearity I Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and IDq of 450 mA: N Average output power = 6 W N Gain = 15 dB N Efficiency = 21 % N ACPR = -42 dBc (at 3.84 MHz) N IMD3 = -38 dBc I Easy power control I Excellent ruggedness I High power gain I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I ESD protection
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range I Broadcast drivers
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1
Symbol
1
3 2
2 3
sym112
[1]
Connected to flange
3. Ordering information
Table 3. Ordering information Package Name BLF3G22-30 Description flanged ceramic package; 2 mounting holes; 2 leads Version SOT608A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -65 Max 65 15 12 +150 200 Unit V V A C C
BLF3G22-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 21 June 2007
2 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
5. Thermal characteristics
Table 5. Symbol Thermal characteristics Parameter Conditions Th = 25 C
[1]
Typ
Unit
Rth(j-case) thermal resistance from junction to case
[1]
1.85 K/W
Thermal resistance is determined under specified RF operating conditions
6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specified Symbol Parameter VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 70 mA VGS = 0 V; VDS = 26 V VGS = VGS(th) + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 V VDS = 10 V; ID = 3.5 A Min Typ Max Unit 65 2.0 9 3 0.3 1.7 3.0 1.5 V V A A V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.7 mA
150 nA S pF
drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 2.5 A feedback capacitance VGS = 0 V; VDS = 26 V; f = 1 MHz
7. Application information
Table 7. Symbol Gp RLin D IMD3 Application information Parameter power gain input return loss drain efficiency third order intermodulation distortion Conditions PL(PEP) = 30 W PL(PEP) = 30 W PL(PEP) = 30 W PL(PEP) = 30 W PL(PEP) < 6 W Min Typ 14 -15 33 -24 < -50 Max Unit dB dB % dBc dBc
Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2170 MHz; IDq = 450 mA
Mode of operation: Two-tone W-CDMA; 3GPP test model 1; 1 - 64 DPCH with 66 % clipping; f1 = 2115 MHz; f2 = 2165 MHz; IDq = 450 mA Gp RLin D IMD3 ACPR
[1]
power gain input return loss drain efficiency third order intermodulation distortion
PL(AV) = 6 W PL(AV) = 6 W PL(AV) = 6 W PL(AV) = 6 W
[1]
13 18 -
15 -10 21 -38 -42
-8 -35 -38
dB dB % dBc dBc
adjacent channel power ratio PL(AV) = 6 W
Measured within 10 kHz bandwidth.
BLF3G22-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 21 June 2007
3 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF3G22-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 450 mA; PL = 30 W (CW); f = 2170 MHz.
7.2 One-tone
20 Gp (dB) 16
001aag535
50 D (%) 40
Gp
12
30
8
20
4
D
10
0 10-1
1
10 PL(AV) (W)
0 102
VDS = 28 V; IDq = 450 mA; Th = 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz
Fig 1. Power gain and drain efficiency as functions of average load power; typical values
7.3 Two-tone
20 Gp (dB) 16
001aag536
50 D (%) 40
Gp
12
30
8
20
4 D 0 10-1
10
1
10 PL(PEP) (W)
0 102
VDS = 28 V; IDq = 450 mA; Th = 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz
Fig 2. Power gain and drain efficiency as functions of peak envelope load power; typical values
BLF3G22-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 21 June 2007
4 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
0 IMD (dBc) -30
001aag541
0 IMD3 (dBc) -30
(1) (2)
001aag542
IMD3 -60 IMD5 IMD7 -90 10-1 1 10 PL(PEP) (W) 102 -90 10-1 1 10 PL(PEP) (W) 102 -60
(3)
VDS = 28 V; IDq = 450 mA; Th = 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz
VDS = 28 V; Th = 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz (1) IDq = 400 mA (2) IDq = 450 mA (3) IDq = 500 mA
Fig 3. Intermodulation distortion as function of peak envelope load power; typical values
Fig 4. IMD3 as function of peak envelope load power; typical values
BLF3G22-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 21 June 2007
5 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
7.4 Two-carrier W-CDMA
Input signals: 3GPP W-CDMA, test model 1, 1-64 DPCH with 66 % clipping; peak-to-average power ratio: 8.5 dB at 0.01 % probability on CCDF; channel spacing = 10 MHz; bandwidth = 3.84 MHz.
20 Gp (dB) 16
001aag537
50 D (%) 40
0 IMD3, ACPR (dBc) -20
001aag538
Gp
12
30
8
20 -40
4
D
10
IMD3 ACPR
0 26 30 34
0 38 42 PL(AV) (W)
-60 26 30 34 38 42 PL(AV) (W)
VDS = 28 V; IDq = 450 mA; Th = 25 C; f1 = 2115 MHz; f2 = 2165 MHz
VDS = 28 V; IDq = 450 mA; Th = 25 C; f1 = 2115 MHz; f2 = 2165 MHz
Fig 5. Power gain and drain efficiency as functions of average load power; typical values
Fig 6. IMD3 and ACPR as functions of average load power; typical values.
7.5 Input impedance and load impedances measured under CW conditions
12 Zi () 8 Ri
001aag539
8 RL ZL () 4
001aag540
0
4
Xi -4
XL 0 2 2.05 2.1 2.15 f (GHz) 2.2 -8 2 2.05 2.1 2.15 f (GHz) 2.2
VDS = 28 V; IDq = 450 mA; PL = 30 W; Th 25 C
VDS = 28 V; IDq = 450 mA; PL = 30 W; Th 25 C
Fig 7. Input impedance as function of frequency (series components); typical values
Fig 8. Load impedance as function of frequency (series components); typical values
BLF3G22-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 21 June 2007
6 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
8. Test information
L1
VDD
C8 C7 C6 L6 C3 C11 L3 C4 C1 C5 L4 L5 L7 L8 C9 C2 L12 C16 C18 C15 L9 C10 C12 L10 L11 C13 C17 C14 C19 C20
VGate
R1
input 50
L2
output 50
mld944
Fig 9. Class-AB test circuit
BLF3G22-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 21 June 2007
7 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
40 mm
40 mm
60 mm
BLF3G22-30 testjig input
BLF3G22-30 testjig output
C8
R1 L1
C13 C17 C14 C19 C20
C6
C7
C3 C4 C1
C5
C11 C12 C2 C9 C15 C18 C16 C10
BLF3G22-30 testjig input
BLF3G22-30 testjig output
001aag543
Dimensions in mm. The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (r = 2.2); thickness = 0.79 mm. The other side is unetched and serves as a ground plane. See Table 8 for list of components.
Fig 10. Component layout for 2.17 GHz class-AB test circuit
BLF3G22-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 21 June 2007
8 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
Table 8.
List of components (see Figure 9 and Figure 10) Description Tekelec variable capacitor; type 37271 multilayer ceramic chip capacitor multilayer ceramic chip capacitor
[1]
Component C1, C2, C9, C10 C3, C4, C11, C12 C5
Value 0.6 pF to 4.5 pF 6.8 pF 2.2 pF 12 pF 10 F 1.5 F
[2]
Dimensions
Catalogue No.
[1] [1]
C6, C7, C13, multilayer ceramic chip capacitor C14, C15, C16 C8 C17, C18 C19 C20 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11, L12
[1] [2] [3]
tantalum capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor handmade; enamelled 1 mm copper wire stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline
[3] [3] [3] [3] [3] [3] [3] [3] [3] [3]
TDK C3225X7R1H155M
1 nF 100 F; 63 V 50 43 29 10 56 9 29 41 50 17 2 loops; 4 mm in diameter 12 mm x 2.4 mm 18 mm x 3 mm 4 mm x 5 mm 5 mm x 18.4 mm 34.4 mm x 2 mm 10 mm x 20 mm 4 mm x 5 mm 20 mm x 3.2 mm 5 mm x 2.4 mm 24.5 mm x 10 mm
American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality. The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (r = 2.2); thickness = 0.79 mm.
BLF3G22-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 21 June 2007
9 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads SOT608A
D
A F
3
D1
U1 q C
B c
1
H
U2
p
E1
E
w1 M A M B M
A b
2
w2 M C M Q 0 5 scale 10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.62 3.76 0.182 0.148 b 7.24 6.99 c 0.15 0.10 D D1 E E1 F 1.14 0.89 H 15.75 14.73 p 3.30 2.92 0.130 0.115 Q 1.70 1.35 q 15.24 U1 20.45 20.19 0.805 0.795 U2 9.91 9.65 w1 0.25 w2 0.51
10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395
10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395
0.285 0.006 0.275 0.004
0.045 0.620 0.035 0.580
0.067 0.600 0.053
0.390 0.010 0.020 0.380
OUTLINE VERSION SOT608A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-02-22 02-02-11
Fig 11. Package outline SOT608A
BLF3G22-30_1 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 21 June 2007
10 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
10. Abbreviations
Table 9. Acronym 3GPP CCDF CW DPCH LDMOS RF UHF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Laterally Diffused Metal Oxide Semiconductor Radio Frequency Ultra High Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access
11. Revision history
Table 10. Revision history Release date 20070621 Data sheet status Product data sheet Change notice Supersedes Document ID BLF3G22-30_1
BLF3G22-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 21 June 2007
11 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BLF3G22-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 21 June 2007
12 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 One-tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . 6 Input impedance and load impedances measured under CW conditions . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 June 2007 Document identifier: BLF3G22-30_1

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