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| MBRM2H100T3G Surface Mount Schottky Power Rectifier POWERMITE(R) Power Surface Mount Package The Schottky Powermite(R) employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite(R) has the same thermal performance as the SMA while being 50% smaller in footprint area. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection, and "ORing" of multiple supply voltages and any other application where performance and size are critical. Features http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 100 VOLTS CATHODE ANODE POWERMITE CASE 457 PLASTIC * * * * * * * * * * * Low Profile - Maximum Height of 1.1 mm Small Footprint - Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink This is a Pb-Free Device Powermite(R) is JEDEC Registered as D0-216AA Case: Molded Epoxy Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 16.3 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260C Maximum for 10 Seconds MARKING DIAGRAM M B2HG 1 2 Mechanical Characteristics: M B2H G = Date Code = Device Code = Pb-Free Package ORDERING INFORMATION Device Package Shipping 12000/Tape & Reel MBRM2H100T3G Powermite (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 April, 2009 - Rev. 0 1 Publication Order Number: MBRM2H100/D MBRM2H100T3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 160C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) Symbol VRRM VRWM VR IO IFSM Tstg, TJ Value 100 Unit V 2.0 50 -65 to +175 A A C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Lead (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Thermal Resistance, Junction-to-Ambient (Note 3) Symbol YJCL RqJA RqJA Value 12 75 260 Unit C/W C/W C/W ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25C) (IF = 2.0 A, TJ = 25C) (IF = 1.0 A, TJ = 125C) (IF = 2.0 A, TJ = 125C) Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 125C) 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%. Symbol VF Value 0.76 0.84 0.61 0.68 20 1.0 Unit V IR mA mA http://onsemi.com 2 MBRM2H100T3G TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (A) 150C 125C 10 25C IF, FORWARD CURRENT (A) 100 150C 125C 10 25C 1 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 10 IR, REVERSE CURRENT (mA) 1 0.1 0.01 0.001 0.0001 25C IR, REVERSE CURRENT (mA) 150C 10 150C 1 0.1 0.01 0.001 25C 125C 125C 0.0001 0.00001 0 10 20 30 40 50 60 70 80 90 0.00001 0 100 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current IF(AV), AVERAGE FORWARD CURRENT (A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 RqJL = 12C/W dc PFO, AVERAGE POWER DISSIPATION (W) 4.0 Square Wave 0 135 140 145 150 155 160 165 170 175 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 TJ = 175C Square Wave dc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 IO, AVERAGE FORWARD CURRENT (A) TL, LEAD TEMPERATURE (C) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 MBRM2H100T3G TYPICAL CHARACTERISTICS 140 120 C, CAPACITANCE (pF) 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 TJ = 25C VR, REVERSE VOLTAGE (V) Figure 7. Capacitance 1000 50% (DUTY CYCLE) 25% 10% 5.0% 2.0% 1.0% 100 R(t) (C/W) 10 1.0 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 1.0 10 100 1000 Figure 8. Thermal Response, Junction-to-Ambient (20 mm2 pad) 100 50% (DUTY CYCLE) 25% 10 R(t) (C/W) 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 1.0 10 100 1000 Figure 9. Thermal Response, Junction-to-Ambient (1 in2 pad) http://onsemi.com 4 MBRM2H100T3G PACKAGE DIMENSIONS POWERMITE CASE 457-04 ISSUE E F 0.08 (0.003) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 -0.05 +0.10 -0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF -A- S C J M TB S C S -B- K PIN 1 PIN 2 R J H -T- L DIM A B C D F H J K L R S D 0.08 (0.003) M TB S C S SOLDERING FOOTPRINT* 0.635 0.025 0.762 0.030 2.67 0.105 2.54 0.100 1.27 0.050 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 MBRM2H100/D |
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