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APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT35GA90B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. (R) APT35GA90S D3PAK Single die IGBT FEATURES * Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant TYPICAL APPLICATIONS * ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TJ Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage 2 1 Ratings 900 63 35 105 30 290 105A @ 900V -55 to 150 300 Unit V A V W Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0mA VGE = 15V, IC = 18A VCE = 900V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 900 Typ 2.5 2.2 4.5 Max 3.1 6 250 1000 100 Unit V VGE =VCE , IC = 1mA A nA 052-6332 Rev C 6 - 2009 VGS = 30V Thermal and Mechanical Characteristics Symbol RJC WT Torque Characteristic Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Min - Typ 5.9 Max 0.43 10 Unit C/W g in*lbf Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6 TJ = 25C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 18A TJ = 150C, RG = 104, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 18A RG = 104 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V IC = 18A RG = 104 TJ = +125C 105 12 15 104 86 642 382 11 14 154 144 1044 907 APT35GA90B_S Min Typ 1934 173 28 84 14 34 A nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Max Unit ns J ns J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6332 Rev C 6 - 2009 Typical Performance Curves 60 50 40 30 20 10 0 V GE APT35GA90B_S 250 15V 13V IC, COLLECTOR CURRENT (A) 200 11V 10V 100 9V 8V 50 7V 6V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C) I = 18A C T = 25C J = 15V TJ= 125C TJ= 55C TJ= 25C TJ= 150C IC, COLLECTOR CURRENT (A) 150 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 0 100 16 14 12 10 8 6 4 2 0 IC, COLLECTOR CURRENT (A) 80 VCE = 180V VCE = 450V VCE = 720V 60 40 TJ= -55C TJ= 25C TJ= 125C 0 0 2 4 6 8 10 12 14 20 0 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 36A 3 IC = 18A TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 5 40 60 80 GATE CHARGE (nC) FIGURE 4, Gate charge 100 4 IC = 36A 3 2 IC = 3A IC = 18A 2 IC = 3A 1 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 1 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 0 6 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 0 0 25 1.15 80 70 IC, DC COLLECTOR CURRENT (A) 60 50 40 052-6332 Rev C 6 - 2009 30 20 10 50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 0 25 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature -50 -25 Typical Performance Curves 15 td(ON), TURN-ON DELAY TIME (ns) td(OFF), TURN-OFF DELAY TIME (ns) VCE = 600V TJ = 25C, or 125C RG = 10 L = 100H APT35GA90B_S 200 14 160 VGE =15V,TJ=125C 13 120 12 80 VGE =15V,TJ=25C 11 40 VCE = 600V RG = 10 L = 100H 10 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 50 RG = 10, L = 100H, VCE = 600V 45 40 35 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 180 160 140 tr, FALL TIME (ns) 120 100 80 60 40 20 0 RG = 10, L = 100H, VCE = 600V TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V 0 tr, RISE TIME (ns) 30 25 20 15 10 5 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 0 TJ = 25 or 125C,VGE = 15V 2500 Eon2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J) V = 600V CE V = +15V GE R =10 G 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 TJ = 25C TJ = 125C V = 600V CE V = +15V GE R = 10 G 2000 TJ = 125C 1500 1000 TJ = 25C 500 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 3500 SWITCHING ENERGY LOSSES (J) 3000 2500 2000 1500 Eon2,18A Eoff,36A 0 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 3000 SWITCHING ENERGY LOSSES (J) V = 600V CE V = +15V GE R = 10 G V = 600V CE V = +15V GE T = 125C J Eon2,36A 2500 2000 1500 1000 500 0 Eon2,36A Eoff,36A 052-6332 Rev C 6 - 2009 Eon2,18A Eoff,18A Eon2,9A Eoff,9A 1000 500 0 Eoff,18A Eon2,9A Eoff,9A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 Typical Performance Curves 10,000 Cies 1,000 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 100 APT35GA90B_S 10 100 Coes Cres 10 1 0 200 400 600 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 1 1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area 0.1 0.50 ZJC, THERMAL IMPEDANCE (C/W) 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.3 0.7 0.5 D = 0.9 Note: PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1 052-6332 Rev C 6 - 2009 APT35GA90B_S 10% Gate Voltage td(on) 90% tr V CC IC V CE TJ = 125C APT30DQ120 Collector Current 5% Collector Voltage 5% 10% A D.U.T. Switching Energy Figure 20, Inductive Switching Test Circuit Figure 21, Turn-on Switching Waveforms and Definitions 90% td(off) TJ = 125C Gate Voltage Collector Voltage tf 10% 0 Collector Current Switching Energy Figure 22, Turn-off Switching Waveforms and Definitions TO-247 (B) Package Outline e3 100% Sn Plated (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D3PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532) Collector 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15(.045) Collector 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) 052-6332 Rev C 6 - 2009 Gate Collector Heat Sink (Drain) and Leads are Plated Emitter 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Emitter Collector Dimensions in Millimeters and (Inches) Gate Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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