 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ACE7401 Technology Description P-Channel Enhancement Mode MOSFET The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features * * * * * * * * * * * * * -30V/-2.8A, RDS(ON)=115m@VGS=-10V -30V/-2.5A, RDS(ON)=125m@VGS=-4.5V -30V/-1.5A, RDS(ON)=170m@VGS=-2.5V -30V/-1.0A, RDS(ON)=240m@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Symbol Max Unit VDSS -30 V VGSS 12 V TA=25 -2.8 Continuous Drain Current (TJ=150) A ID TA=70 -2.1 Pulsed Drain Current IDM -8 A Continuous Source Current (Diode Conduction) IS -1.4 A TA=25 0.33 Power Dissipation W PD TA=70 0.21 Operating Junction Temperature TJ -55/150 OC Storage Temperature Range TSTG -55/150 OC Thermal Resistance-Junction to Ambient RJA 105 OC/W Parameter Drain-Source Voltage Gate-Source Voltage VER 1.2 1 ACE7401 Technology Packaging Type SOT-23-3 3 P-Channel Enhancement Mode MOSFET Pin Symbol Description 1 G Gate 2 S Source 3 D Drain 1 2 Ordering information Selection Guide ACE7401 XX + H Halogen - free Pb - free CM : SOT-323 Electrical Characteristics TA=25, unless otherwise noted Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Symbol Conditions Static Min. Typ. Max. Unit V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) VGS=0V, ID=-250uA VDS=VGS, ID=-250uA VDS=0V,VGS=12V VDS=-24V, VGS=0V VDS=-24V, VGS=0V TJ=85 VDS=-5V, VGS=-4.5V VGS=-10V, ID=-2.8A VGS=-4.5V, ID=-2.5A -30 -0.4 -1.0 100 -1 -5 -4 0.105 0.125 0.115 0.135 VER 1.2 V nA uA A 2 ACE7401 0.170 0.240 S -1.2 V Technology P-Channel Enhancement Mode MOSFET VGS=-2.5V, ID=-1.5A VGS=-1.8V, ID=-1.0A 0.155 0.210 4 -0.8 5.8 VDS=-15V, VGS=-4.5V, ID=-2.0A 0.8 1.5 380 VDS=-15V, VGS=0V, f=1MHz 55 40 6 pF nC Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=-10V,ID=-2.8A IS=-1.2A, VGS=0V Dynamic VDD=-15V, RL=15, ID=-1.0A, VGEN=-10V, RG=3 3.9 40 15 nS Typical Performance Characteristics Output Characteristics Transfer Characteristics VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) VER 1.2 3 ACE7401 Technology On-Resistance vs. Drain Current P-Channel Enhancement Mode MOSFET Capacitance ID-Drain Current (A) VDS-Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature Qg-Total Gate Charge (nC) TJ-Junction Temperature () Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD-Source-to-Drain Voltage (V) VGS-Gate-to-Source Voltage (V) VER 1.2 4 ACE7401 Technology Threshold Voltage P-Channel Enhancement Mode MOSFET Single Pulse Power TJ-Temperature() Time (sec) Normalized Thermal Transient Impedance, Junction-to Foot VER 1.2 5 ACE7401 Technology Packing Information SOT-323 P-Channel Enhancement Mode MOSFET VER 1.2 6 ACE7401 Technology P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 7 |
Price & Availability of ACE7401
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |