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| BCP69T1 PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features http://onsemi.com * High Current: IC = -1.0 A * The SOT-223 Package can be soldered using wave or reflow. * SOT-223 package ensures level mounting, resulting in improved * * thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. NPN Complement is BCP68 Pb-Free Package is Available MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value -20 -25 -5.0 -1.0 1.5 12 -65 to 150 Unit Vdc Vdc Vdc Adc W mW/C C 1 EMITTER 3 4 2 3 MARKING DIAGRAM AYW CEG G SOT-223 (TO-261) CASE 318E STYLE 1 CE A Y W G THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction-to-Ambient (Surface Mounted) Lead Temperature for Soldering, 0.0625 in from case Time in Solder Bath Symbol RqJA TL Max 83.3 260 10 Unit C/W C Sec = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. ORDERING INFORMATION Device BCP69T1 BCP69T1G Package SOT-223 SOT-223 (Pb-Free) Shipping 1000 / Tape & Reel 1000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 October, 2008 - Rev. 8 1 Publication Order Number: BCP69T1/D BCP69T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -100 mAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector-Base Cutoff Current (VCB = - 25 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = - 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = - 5.0 mAdc, VCE = -10 Vdc) (IC = - 500 mAdc, VCE = -1.0 Vdc) (IC = -1.0 Adc, VCE = -1.0 Vdc) Collector-Emitter Saturation Voltage (IC = -1.0 Adc, IB = -100 mAdc) Base-Emitter On Voltage (IC = -1.0 Adc, VCE = -1.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = - 5.0 Vdc) fT - 60 - MHz hFE 50 85 60 - - - - - - - - 375 - -0.5 -1.0 - V(BR)CES V(BR)CEO V(BR)EBO ICBO IEBO -25 -20 -5.0 - - - - - - - - - - -10 -10 Vdc Vdc Vdc mAdc mAdc Symbol Min Typ Max Unit VCE(sat) VBE(on) Vdc Vdc http://onsemi.com 2 BCP69T1 TYPICAL ELECTRICAL CHARACTERISTICS 200 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 300 200 hFE , CURRENT GAIN 100 70 50 VCE = -1.0 V TJ = 25C 100 70 50 VCE = -10 V TJ = 25C f = 30 MHz 20 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 30 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 1. DC Current Gain -1.0 TJ = 25C - 0.8 V, VOLTAGE (VOLTS) V(BE)sat @ IC/IB = 10 C, CAPACITANCE (pF) 160 Figure 2. Current Gain Bandwidth Product TJ = 25C 120 - 0.6 V(BE)on @ VCE = -1.0 V 80 Cib 40 Cob 0 Cob Cib - 5.0 -1.0 -1.0 - 2.0 -1.5 - 3.0 - 2.0 - 4.0 - 2.5 - 5.0 - 0.4 - 0.2 V(CE)sat @ IC/IB = 10 0 -1.0 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Figure 3. Saturation and "ON" Voltages VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances 10 10 ms IC, COLLECTOR CURRENT (A) 1s 1.0 Thermal Limit 100 ms 1 ms 0.1 Single Pulse Test @ TA = 25C 0.01 0.1 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) 100 Figure 5. Safe Operating Area http://onsemi.com 3 BCP69T1 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE M D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE E 1 2 3 e1 b e A q L1 C DIM A A1 b b1 c D E e e1 L1 HE q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 0.08 (0003) A1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 BCP69T1/D |
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