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| SMG1332E Elektronische Bauelemente 600mA, 20V,RDS(ON)600m[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG1332E provide the designer with best combination of fast swirching, low on-resistance and cost-effectiveness. S 2 A L 3 Top View SC-59 Dim A B 1 Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 B C D G H J K D Features * Simple Gate Drive * 2KV ESD Rating (Per MIL-STD-883D) * Small Package Outline H G C J K L S Drain Gate Source All Dimension in mm D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 20 5 600 470 2.5 1.0 0.008 Unit V V mA mA A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 125 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 1 of 4 SMG1332E Elektronische Bauelemente 600mA, 20V,RDS(ON)600m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance o o Unless otherwise specified) Symbol BVDSS Min. 20 _ Typ. _ Max. _ _ Unit V V/ C V uA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=5V VDS=20V,VGS=0 VDS=16V,VGS=0 VGS=4.5V, ID=600mA VGS=2.5V, ID=400mA o BVDS/ Tj VGS(th) IGSS IDSS 0.02 _ _ _ _ _ _ 0.5 _ _ _ _ 1.2 10 1 10 600 1200 2 _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ [ Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time nput Capacitance I Output Capacitance Reverse Transfer Capacitance Forward Transconductance 1.3 0.3 0.5 4 10 15 2 38 17 12 1 nC ID=600mA VDS=16V VGS=4.5V _ _ _ _ _ _ _ VDD=10V ID=600mA nS VGS=10V RG=3.3 [ RD=16.7[ _ _ _ 60 _ _ pF VGS=0V VDS=10V f=1.0MHz _ _ S VDS=5V, ID=600mA Source-Drain Diode Parameter Forward On Voltage 2 Symbol VDS Min. _ Typ. _ Max. 1.2 Unit V Test Condition IS=300mA, VGS=0V. Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on FR4 board, tO 10sec. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 2 of 4 SMG1332E Elektronische Bauelemente 600mA, 20V,RDS(ON)600m[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 3 of 4 SMG1332E Elektronische Bauelemente 600mA, 20V,RDS(ON)600m[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 4 of 4 |
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