 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LIGHT BAR LED DISPLAY LBD711SBKS-XX DATA SHEET DOC. NO REV. DATE : : QW0905- LBD711SBKS-XX A : 14 - Jul. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD711SBKS-XX Page 1/6 Package Dimensions 20.35(0.801") 190.25 6.3(0.248") 5.0 (0.197") LBD711SBKS-XX LIGITEK O 0.5 TYP 12.5(0.492") 4.2O 0.5 1 + PIN NO.1 2 - Note : 1.All dimension are in millimeters and (lnch) tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD711SBKS-XX Page 2/6 Internal Circuit Diagram LBD711SBKS-XX 2 1 Electrical Connection PIN NO.1 1 2 Anode Cathode LBD711SBKS-XX LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD711SBKS-XX Page 3/6 Absolute Maximum Ratings at Ta=25 J Ratings Parameter Symbol SBKS Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Electrostatic Discharge Operating Temperature Storage Temperature IF 30 mA UNIT IFP 100 mA PD Ir ESD Topr Tstg 120 50 500 -25 ~ +85 -25 ~ +85 mW g A V J J Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 J Part Selection And Application Information(Ratings at 25J ) Electrical CHIP PART NO Material LBD711SBKS-XX common cathode Emitted or anode Blue f D (nm) f (nm) Vf(v) Iv(mcd) Typ. IV-M Typ. Max. Min. InGaN/SiC Common Anode 475 26 3.5 4.2 18 31 2:1 Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The luminous intensity data did not including O 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD711SBKS-XX Page 4/6 Test Condition For Each Parameter Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio Symbol Vf Iv Unit volt mcd nm nm Test Condition If=20mA If=30mA If=20mA If=20mA Vr=5V f D f Ir IV-M g A LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD711SBKS-XX Page 5/6 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.1 Forward current vs. Forward Voltage 30 25 20 15 10 5 0 1 2 3 4 5 Fig.2 Relative Intensity vs. Forward Current Forward Current(mA) 1.5 Relative Intensity Normalize @20mA 1.25 1.0 0.75 0.5 0.25 0 0 5 10 15 20 25 30 Forward Voltage(V) Forward Current(mA) Fig.3 Forward Current vs. Temperature Fig.4 Relative Intensity vs. Wavelength Forward Current@20mA 30 20 10 0 0 25 50 75 100 Relative Intensity@20mA 40 1.0 0.5 0 380 430 480 530 580 630 680 Ambient Temperature(J ) Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD711SBKS-XX Page 6/6 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 JO 5J 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 JO 5J 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65JO 5J 2.RH=90 %~95% 3.t=240hrs O 2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 JO 5J &-40JO (10min) (10min) 2.total 10 cycles 5J The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 JO 5J 2.Dwell time= 10 O 1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 JO 5J 2.Dwell time=5 O 1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 |
Price & Availability of LBD711SBKS-XX
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |