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| CHENMKO ENTERPRISE CO.,LTD SMALL FLAT NPN Epitaxial Transistor VOLTAGE 60 Volts APPLICATION * High current amplifier. CHT5113PPT CURRENT 6 Amperes FEATURE * Small flat package. ( DPAK ) * Low saturation voltage VCE(sat)=0.55V(Max.)(IC/IB=6A/0.3A) .050 (1.27) .030 (0.77) DPAK .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) .228(5..80) .217 (5.40) CONSTRUCTION * NPN Cilicon Transistor (1) (3) (2) .394 (10.00) .354 (9.00) .028 (0.70) .019 (0.50) .035 (0.90) .050 (1.27) .020 (0.51) .110 (2.80) .087 (2.20) .181 (4.60) .268 (6.80) .252 (6.40) .024 (0.60) CIRCUIT (1) B C (3) 1 Base 2 Emitter 3 Collector ( Heat Sink ) .023 (0.58) .018 (0.46) E (2) .020 (0.51) Dimensions in inches and (millimeters) DPAK MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM PTOT TSTG TJ TAMB CHT5113PPT 150 60 6 6 20 1.0 -55 to +150 +150 -55 to +150 UNITS Volts Volts Volts Amps Amps W o C C C o o 2007-05 RATING CHARACTERISTIC CURVES ( CHT5113PPT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector Cut-off Current Emitter Cut-off Current CONDITION IC=100uA IC=10mA IE=100uA IE=0; VCB=120V IC=0; VEB=6V VCE=1V; IC=10mA VCE=1V; IC=2A VCE=1V; IC=5A VCE=1V; IC=10A IC=100mA; IB=5mA IC=1A; IB=50mA IC=2A; IB=100mA IC=6A; IB=300mA IC=6A; IB=300mA VCE=1V; IC=6A IE=ie=0; VCB=10V; f=1MHz IE=-100mA; VCE=10V SYMBOL BVCBO BVCEO BVEBO ICBO IEBO MIN. 150 60 6 100 hFE 120 75 TYPE 170 70 8 200 100 30 20 80 150 400 1.15 1.05 50 150 MAX. 50 10 300 50 120 220 550 1.3 1.2 mVolts UNITS Volts Volts Volts nA nA DC Current Gain Collector-Emitter Saturation Voltage VCEsat Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance Transition Frequency VBEsat VBEon Cob fT Volts Volts pF MHz RATING CHARACTERISTIC CURVES ( CHT5113PPT ) Figure 1. Collector-Emitter Saturation Voltage vs Collector Current COLLECTOR-EMITTER SATURATION VOLTAGE, VCEsat(mV) 1000 Figure 2. Base-Emitter Saturation Voltage vs Collector Current 10 100 BASE-EMITTER SATURATION VOLTAGE, VBEsat(V) IC/IB=20 IC/IB=20 1 Ta = 25oC Ta = 25oC 10 0.001 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT, IC(A) COLLECTOR CURRENT, IC(A) Figure 3. DC Current Gain 1000 VCE=1.0V DC CURRENT GAIN, hFE Ta = 25oC 100 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT, IC(A) |
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