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| JMnic Product Specification Silicon PNP Power Transistors 2SB1098 DESCRIPTION With TO-220F package Complement to type 2SD1589 DARLINGTON High DC current gain APPLICATIONS Low speed switching industrial use Low frequency power amplifier PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ae ae Open emitter Open base Open collector CONDITIONS MAX -100 -100 -7 -5 -8 -0.5 2 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-3A; IB=-3mA IC=-3A; IB=-3mA VCB=-100V ;IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-2V IC=-5A ; VCE=-2V 2000 500 MIN 2SB1098 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX -1.5 -2.0 -1 -3 15000 UNIT V V |I A mA Switching times ton ts tf Turn-on time Storage time Fall time IC=-3A ;IB1=-IB2=-3mA RL=17| ;VCC=-50V; 0.5 1 1 |I |I |I s s s hFE-1 Classifications R 2000-5000 O 3000-7000 Y 5000-15000 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1098 Fig.2 Outline dimensions 3 |
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