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  Datasheet File OCR Text:
 High Voltage Diode Module (TRACTION - PACTM)
PSTKD 82
IFRMS = 180 A IFAVM = 82 A VRRM = 600-1800 V
Preliminary Data Sheet
VRSM V 700 900 1100 1300 1500 1700 1900 Symbol IFRMS IFAVM ITSM VRRM V 600 800 1000 1200 1400 1600 1800 Type PSTKD PSTKD PSTKD PSTKD PSTKD PSTKD PSTKD 82/06 82/08 82/10 82/12 82/14 82/16 82/18
3
-
2
+
~ 1
Features
Test Conditions TVJ = TVJM TC = 110C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
Maximum Ratings 180 82 1700 1950 1530 1740 14450 15700 11700 12500 -40 ...125 125 -40 ...125 A A A A A A A2 s A2 s A2 s A2 s C C C
l
International standard package, JEDEC TO-240 AA Direct Copper Bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~
Applications

oi2dt
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies
Advantages

TVJ TVJM Tstg VISOL Md Weight Symbol IRRM, IDRM VT VT0 rT QS IRM RthJC RthJK dS dA a 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Mounting torque (M5) Terminal connection torque (ISK M5) Typical including screws Test Conditions TVJ = TVJM; VR = VRRM IT = 200 A; TVJ = 25C For power-loss calculations only (TVJ = TVJM) TVJ = TVJM TVJ = 125 C; IF=50 A, -di/dt = 3 A/s per diode; DC current per module per diode; DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration
3000 V~ 3600 V~ 5.0/44 Nm/lb.in. 3.0/26 Nm/lb.in. 56 g Characteristic Values 15 1.74 0.8 2.7 170 45 0.35 0.18 0.55 0.275 12.7 9.6 50 mA V V m C A K/W K/W K/W K/W mm mm m/s2
Space and weight savings Simple mounting with two screws Improved temperature and power cycling Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSTKD 82
Fig. 1 Surge overload current IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode)
Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSTKD 82
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.35 0.37 0.39 0.43 0.47
Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.013 0.072 0.265 ti (s) 0.0014 0.062 0.375
Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.55 0.57 0.59 0.63 0.67
Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.013 0.072 0.265 0.2 ti (s) 0.0014 0.062 0.375 1.32
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20


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