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| Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor General Description these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment TO-220 Features 5.5A, 400V, RDS(on) <1.0@VGS = 10 V * Fast switching * 100% avalanche tested * Improved dv/dt capability * Equivalent Type:IRF730 * 1- G 2-D 3-S Maximum RatingsTa=25 unless otherwise specified T stg ----Storage Temperature ------------------------------------------------------ -55~150 T j ----Operating Junction Temperature -------------------------------------------------- 150 V DSS ---- Drain-Source Voltage ----------------------------------------------------------400V VDGR ---- Drain-Gate Voltage (RGS=20k) -------------------------------------------------------VGSS ---- Gate-Source Voltage -----------------------------------------------------------------------ID ---- Drain Current (Continuous) ------------------------------------------------------------------400V 20V 5.5A PD ---- Maximum Power Dissipation ------------------------------------------------------------- 73W IAR ---- Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 5.5 A EAS---- Single Pulse Avalanche Energy (starting Tj = 25, ID = IAR, VDD = 50 V) --------------------------------------------------- 330 mJ EAR---- Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 7.3mJ Thermal Characteristics Symbol Rthj-case Rthj-amb Rth c-s Items Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink TO-220 Max 1.71 Max 62.5 Typ 0.5 Unit /W /W /W Shantou Huashan Electronic Devices Co.,Ltd. HFP730 Electrical CharacteristicsTa=25 unless otherwise specified Symbol Off Characteristics BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage 2.0 2.9 1000 100 26 40 120 180 110 33 4.3 11 5.5 22 1.5 400 25 250 V A A nA V ID=250A ,VGS=0V VDS =400V, VGS=0V VDS =320V, VGS=0V,Tj=125 VGS= 20V , VDS =0V VDS = VGS , ID=250A VGS=10V, ID=3A VDS=40V, ID=3A (Note 1) Items Min. Typ. Max. Unit Conditions 100 4.0 1.0 On Characteristics Gate Threshold Voltage VGS(th) RDS(on) gFS Ciss Coss Crss Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge S pF pF pF nS nS nS nS nC nC nC A A V Dynamic Characteristics and Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1.0 MHz td(on) tr td(off) tf Qg Qgs Qgd VDD = 200 V, ID = 5.5Apk RG= 25 (Note 1,2) VDS=0.8VDSS, ID=5.5A, VGS = 10 V (Note 1,2) Drain-Source Diode Characteristics and Maximun Ratings Continuous Source-Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source-Drain Diode Forward VSD On-Voltage Notes: 1. Pulse Test: Pulse width300S,Duty cycle2% 2. Essentially independent of operating temperature IS=5.5A,VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. HFP730 Typical Characteristics Shantou Huashan Electronic Devices Co.,Ltd. Typical Characteristics HFP730 Shantou Huashan Electronic Devices Co.,Ltd. Typical Characteristics HFP730 Shantou Huashan Electronic Devices Co.,Ltd. Typical Characteristics HFP730 |
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