 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-247 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJW16018 Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg Collector-base voltage PARAMETER INC Collector-emitter voltage Emitter-base voltage ANG H E SEM Open base Open emitter OND IC CONDITIONS TOR UC VALUE 1500 800 6 10 15 8 12 UNIT V V V A A A A W ae ae Open collector Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae TC=100ae 125 50 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector outoput capacitance CONDITIONS IC=50mA; IB=0 IC=5A ;IB=2A TC=110ae IC=10A ;IB=5A IC=5A ;IB=2A TC=110ae VCEV=1500V,VBE(off)=1.5Vdc TC=100ae VCE=1500V; RBE=50| TC=100ae VEB=6V; IC=0 IC=5A ; VCE=5V IE=0;f=1kHz ; VCB=10V 4 MIN 800 MJW16018 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEV ICER IEBO hFE COB TYP. MAX UNIT V 1.0 1.5 5.0 1.5 1.5 0.25 1.50 2.5 0.1 V V V mA mA mA Switching times resistive load td tr ts tf Delay time Rise time INC Fall time E SEM ANG H OND IC TOR UC 450 0.085 0.90 4.5 0.2 0.2 2.0 9.0 0.4 |I |I |I |I pF s s s s Storage time IC=5A; IB1= IB2=2.0A VCC=250V ,RB2=3| PW=25|I s Duty CycleU 2% 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJW16018 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
Price & Availability of MJW16018
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |