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| NTR4171P Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23 Features * * * * Low RDS(on) at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(on) MAX 75 mW @ -10 V -30 V 110 mW @ -4.5 V 150 mW @ -2.5 V ID MAX -2.2 A -1.8 A -1.0 A Applications * Load Switch * Optimized for Battery and Load Management Applications in MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Pulsed Drain Current tp = 10 ms IDM TJ, Tstg IS TL TA = 25C TA = 85C TA = 25C TA = 25C PD 1.25 -15.0 -55 to 150 -1.0 260 ID Symbol VDSS VGS Value -30 12 -2.2 -1.5 -3.5 0.48 Portable Equipment like Cell Phones, PDA's, Media Players, etc. P-CHANNEL MOSFET Unit V V G A D W 3 A C mA C 1 2 SOT-23 CASE 318 STYLE 21 S MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain TRFMG G 1 Gate 2 Source Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 10 s (Note 1) Symbol RqJA RqJA Max 260 100 Unit C/W TRF = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTR4171PT1G NTR4171PT3G Package SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 10000/Tape & Reel 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 June, 2008 - Rev. 0 1 Publication Order Number: NTR4171P/D NTR4171P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = -10 V, ID = -2.2 A VGS = -4.5 V, ID = -1.8 A VGS = -2.5 V, ID = -1.0 A Forward Transconductance gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD RG td(on) tr td(off) tf td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, IS = -1.0 A, dISD/dt = 100 A/ms VGS = 0 V, IS = -1.0 A, TJ = 25C VGS = -4.5 V, VDS = -15 V, ID = -3.5 A, RG = 6 W VGS = -10 V, VDS = -15 V, ID = -3.5 A, RG = 6 W VGS = -4.5 V, VDS = -15 V, ID = -3.5 A VGS = -10 V, VDS = -15 V, ID = -3.5 A VDS = -5.0 V, ID = -2.2 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance 720 VGS = 0 V, f = 1.0 MHz, VDS = -15 V 95 65 15.6 0.7 1.6 2.6 7.4 0.7 1.6 2.6 6.1 W ns nC nC pF VGS = VDS, ID = -250 mA -0.7 -1.15 3.5 50 60 90 7.0 75 110 150 S -1.4 V mV/C mW V(BR)DSS V(BR)DSS /TJ IDSS IGSS VGS = 0 V, ID = -250 mA ID = -250 mA, Reference to 25C VGS = 0 V, VDS = -24 V, TJ = 25C VGS = 0 V, VDS = -24 V, TJ = 85C VDS = 0 V, VGS = "12 V -30 24 -1.0 -5.0 0.1 V mV/C mA mA Symbol Test Condition Min Typ Max Units SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge -0.8 14 10 4.0 8.0 nC -1.2 V ns 8.0 11 32 14 9.0 16 25 22 ns 2. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTR4171P TYPICAL CHARACTERISTICS 10 9.0 -ID, DRAIN CURRENT (A) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 VGS = -2.0 V -2.2 V -4.5 V -ID, DRAIN CURRENT (A) -10 V -2.5 V 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 TJ = 125C 1.0 1.25 1.5 1.75 TJ = 25C VDS = -5 V TJ = -55C 2.0 2.25 2.5 2.75 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) -VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.30 0.25 0.20 0.15 0.10 0.05 0 TJ = 25C ID = -2.2 A RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.30 Figure 2. Transfer Characteristics -2.0 V 0.25 0.20 -2.2 V TJ = 25C -2.5 V 0.15 0.10 0.05 0 -4.5 V VGS = -10 V 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 -VGS, GATE VOLTAGE (V) RDS(on), NORMALIZED DRAIN-TO-SOURCE RESISTANCE (W) -ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 10 VGS = -4.5 V ID = -2.2 A IDSS, LEAKAGE (nA) 1000 10,000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage TJ = 150C TJ = 125C 100 -25 0 25 50 75 100 125 150 0 5.0 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTR4171P TYPICAL CHARACTERISTICS -VDS, DRAIN-TO-SOURCE VOLTAGE (V) -VGS, GATE-TO-SOURCE VOLTAGE (V) 1100 1000 900 C, CAPACITANCE (pF) 800 700 600 500 400 300 200 100 C rss 0 0 Coss Ciss 12 10 -VDS 8.0 6.0 4.0 QGS 2.0 0 QGD VDS = -15 V TJ = 25C ID = -3.5 A -VGS QT 16 14 12 10 8.0 6.0 4.0 2.0 0 2.0 4.0 6.0 8.0 10 12 14 0 16 VGS = 0 V TJ = 25C f = 1 MHz 5.0 10 15 20 25 30 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 10 -IS, SOURCE CURRENT (A) Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = -10 V VDD = -15 V ID = -3.5 A t, TIME (ns) 100 td(off) tf TJ = 125C 1.0 TJ = 150C 10 tr td(on) TJ = 25C TJ = -55C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.0 1.0 10 RG, GATE RESISTANCE (W) 100 0.1 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1.5 1.4 1.3 POWER (W) -VGS(th) (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 ID = -250 mA 30 25 20 15 10 5.0 0 Figure 10. Diode Forward Voltage vs. Current 0.001 0.01 0.1 1.0 10 100 1000 TJ, TEMPERATURE (C) SINGLE PULSE TIME (s) Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation http://onsemi.com 4 NTR4171P TYPICAL CHARACTERISTICS 100 -ID, DRAIN CURRENT (A) VGS = -12 V Single Pulse TC = 25C 10 10 ms 100 ms 1.0 1 ms 10 ms 0.1 0.01 RDS(on) Limit Thermal Limit Package Limit 0.1 1.0 10 dc 100 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) 1.0 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 0.01 Figure 14. FET Thermal Response http://onsemi.com 5 NTR4171P PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTR4171P/D |
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