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ECO-TOPTM 1 IGBT Module
Short Circuit SOA Capability Square RBSOA
Preliminary Data Sheet
S15 R15 A15 A7 A9 D1 A1 U1 V1 G15 V12 V13 K1 G1 V3 V6 N15 V9 V10 Q1 N1
PSII 30/12*
IC80 = VCES = VCE(sat)typ. =
33 A 1200 V 3.1 V
ECO-TOPTM 1
IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol
Conditions
TVJ = 25C to 150C
TC = 25C TC = 80C
VGE = 15 V; RG = 47 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H
VCE = VCES; VGE = 15 V; RG = 47 ; TVJ = 125C non-repetitive TC = 25C
Conditions
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES;
VCE = 0 V; VGE = 20 V
et he r se ta nd da l u e til t iv s tt en ta c n u opm te od el r ev pd
Maximum Ratings 1200 20
typical picture, for pin configuration see outline drawing
*NTC optional
V
V
49 33
A A
50 VCES
A
10
s W
208
Features
*
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 3.1 3.5 3.7
V V
* * * * * * * * * * * * * *
4.5
6.5
V
Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied
VGE = 0 V; TVJ = 25C TVJ = 125C
1.1 4.2
mA mA
Applications
180
nA
Inductive load, TVJ = 125C VCE = 600 V; IC = 30 A VGE = 15/0 V; RG = 47
100 70 500 70 4.6 3.4 1.65 1.2
ns ns ns ns mJ mJ nF 0.6 K/W K/W
AC and DC motor control AC servo and robot drives Power supplies Welding inverters
Advantages
Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Reverse diodes (FRED)
Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 30 A; TVJ = 25C TVJ = 125C Maximum Ratings 49 30 A A
Characteristic Values min. typ. max. 2.4 1.77 27 150 2.6 2.7 V V A ns
Temperature Sensor NTC
Symbol R25 B25/50 Conditions T = 25C
Module
Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight
et e sh er ta nd au dl e til iv s nt e at ct t n u opm te od el r ev pd
with heatsink compound (0.42 K/m.K; 50 m)
IF = 30 A; diF/dt = 500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V
1.3 K/W K/W
Characteristic Values min. typ. max. 4.75 5.0 3375
5.25 k K
Conditions
Maximum Ratings -40...+125 -40...+150 3000
C C
IISOL 1 mA; 50/60 Hz Mounting torque (M5)
V~
Max. allowable acceleration
3 26 50
Nm lb.in. m/s 2
Conditions
Characteristic Values min. typ. max.
Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink)
11.2 11.2
mm mm g
86
Package style and outline
Dimensions in mm (1mm = 0.0394")
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
80
A IC
VGE = 17 V 15 V 13 V 11V
80 A IC 60
VGE = 17V 15V 13V 11V
60
40
TVJ = 25C
40
20
9V
20
9V
0
42T120
TVJ = 125C
42T120
0
1
2
3
4
VCE
5
6V7
0
0
1
2
3
4
5
VCE
6V7
Fig. 1 Typ. output characteristics
80
A IC
60
40
20
TVJ = 125C
0
4
6
Fig. 3 Typ. transfer characteristics
20
V
15
VGE
et he r se ta nd da l u ve stil ent ti t ta c n u opm te od el r ev pd
Fig. 2 Typ. output characteristics
50 40 A 30 20 10 0
VCE = 20V
IF
TVJ = 125C
TVJ = 25C
TVJ = 25C
42T120
42T120
8
10
12
14 V 16
0
1
2
3
V
4
VGE
VF
Fig. 4 Typ. forward characteristics of free wheeling diode
50 40 A 30 20 10
200 160 ns 120 80 40
trr
trr
IRM
10
VCE = 600V IC = 25A
5
TVJ = 125C VR = 600 V IF = 15 A IRM
0
42T120
0
42T120
0
40
80
120
QG
nC
160
0
200
400
600
-di/dt
800 A/s
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
15
mJ Eon
VCE = 600 V VGE = 15 V RG = 47 TVJ = 125C
150 ns 100 t Eoff
12
mJ td(off) Eoff
600 ns 400 t
10
8
VCE = 600V VGE = 15V RG = 47 TVJ = 125C
td(on) tr
5
50
4
200
Eon
0
42T120
0
20
40
IC
A
60
0
0
tf 0 20 40 IC A
42T120
0 60
Fig. 7 Typ. turn on energy and switching
4
mJ Eon
3
Eon
2
1
0
0
20
Fig. 9 Typ. turn on energy and switching
60
A ICM
40
t ee sh er ta nd au dl ve stil ent ti t ta c n u opm te od el pr dev
td(on) 160 ns
Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current
td(off) 800 ns 600 t
8
mJ
120
t
Eoff
6
Eoff
tr
80
4
400
VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C
40
2
VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C
200
tf
42T120
40
60
80
100
0
0
42T120
0
20
40
60
80
100
0
RG
RG
Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor
diode
10
K/W 1
RG = 47 TVJ = 125C
ZthJC
IGBT
0,1 0,01 0,001
single pulse
20
0
42T120
0
200
400
600
800 1000 1200 1400 V
VCE
0,0001 0,00001 0,0001 0,001
MDI...50-12P1
0,01
0,1 t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance RBSOA
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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