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AGR19090E 90 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz-- 1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features
Typical performance over entire GSM band: -- P1dB: 90 W typical. -- Continuous wave (CW) power gain: @ P1dB = 14.0 dB. -- CW Efficiency @ P1dB = 50% typical. -- Return loss: -12 dB.
Device Performance Features
High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years.
AGR19090EU (unflanged)
AGR19090EF (flanged)
Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 90 W CW output power. Large signal impedance parameters available.
Figure 1. Available Packages
N-CDMA Features
Typical 2 carrier N-CDMA performance: VDD = 28 V, IDQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95 CDMA (pilot, sync, paging, traffic codes 8--13). Peak/average (P/A) = 9.72 dB at 0.01% probability on CCDF. 1.2288 MHz transmission bandwidth (BW). Adjacent channel power ratio (ACPR) measured over 30 kHz BW at f1 - 885 kHz and f2 + 885 kHz. Third-order intermodulation (IM3) distortion measured over a 1.2288 MHz BW at f1 - 2.5 MHz and f2 + 2.5 MHz. -- Output power (POUT): 18 W. -- Power gain: 15.0 dB. -- Efficiency: 25.8%. -- IM3: -34.5 dBc. -- ACPR: -50 dBc.
ESD Rating*
AGR19090E HBM MM CDM
Minimum (V) 500 50 1500
Class 1B A 4
EDGE Features
Typical EDGE performance (1960 MHz, 26 V, IDQ = 800 mA): -- Output power (POUT): 36 W. -- Power gain: 15.0 dB. -- Efficiency: 38%. -- Modulation spectrum: @ 400 kHz = -61.0 dBc. @ 600 kHz = -73.0 dBc. -- Error vector magnitude (EVM) = 2.2%.
* Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
AGR 19090 E 90 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19090EU AGR19090EF Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C: AGR19090EU AGR19090EF Derate Above 25 C: AGR19090EU AGR19090EF Operating Junction Temperature Storage Temperature Range Symbol VDSS VGS PD PD -- -- TJ Value 65 -0.5, 15 230 230 1.33 1.33 200 -65, 150 Unit Vdc Vdc W W W/C W/C C C Symbol RJC RJC Value 0.75 0.75 Unit C/W C/W
TSTG
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 3. dc Characteristics Off Characteristics 130 Drain-source Breakdown Voltage (VGS = 0 V, ID = 300 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.67 A) Gate Threshold Voltage (VDS = 10 V, ID = 270 A) Gate Quiescent Voltage (VDS = 28 V, ID = 800 mA) Drain-source On-voltage (VGS = 10 V, ID = 0.67 A) Parameter Symbol V(BR)DSS IGSS IDSS GFS VGS(th) VGS(Q) VDS(on) Min 65 -- -- -- -- -- -- Typ -- -- -- 6.0 -- 3.7 0.08 Max -- 2.7 150 8 -- 4.8 -- -- Un i t Vdc Adc Adc S Vdc Vdc Vdc
AG R190 90E 90 W, 1930 MHz --1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. RF Characteristics Parameter Dynamic Characteristics Symbol Min Typ Max Unit
CRSS -- 2.0 -- pF Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) (Part is internally matched both on input and output.) (in Agere Systems Supplied Test Fixture) Functional Tests (in Supplied Test Fixture) GPS 14.5 15.5 -- dB Common-source Amplifier Power Gain (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency -- 25.8 -- % (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Third-order Intermodulation Distortion IM3 -- -34.5 -- dBc (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration BW centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) ACPR -- -50 -- dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 1.2288 MHz integration BW centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) IRL -- -12 -- dB Input Return Loss (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Output Power at 1 dB Gain Compression P1dB 90 95 -- W (VDD = 28 V, POUT = 90 W CW, f = 1990 MHz, IDQ = 800 mA) Ruggedness No degradation in output (VDD = 28 V, POUT = 90 W CW, IDQ = 800 mA, f = 1930 MHz, power. VSWR = 10:1 [all phase angles])
AGR 19090 E 90 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19090E
R2 VGG R3 R4 FB1 C9 Z8 2 C11 C17 C12 C13 C14 C16 C15 Z9 Z10 C16 Z11 C2 Z12 RF OUTPUT VDD
+
C7 Z13 Z7 Z14 1 3 DUT
C10
C3
C4
C5
Z1 RF INPUT C8
Z2
C1
Z3
Z4
Z5
Z6
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
A. Schematic
B. Component Layout
Parts List: ? Microstrip line: Z1 0.390 in. x 0.065 in.; Z2 0.300 in. x 0.065 in.; Z3 0.070 in. x 0.065 in.; Z4 0.400 in. x 0.260 in.; Z5 0.100 in. x 0.540 in.; Z6 0.160 in. x 0.770 in.; Z7 0.275 in. x 1.160 in.; Z8 0.550 in. x 1.130 in.; Z9 0.300 in. x 0.205 in.; Z10 0.120 in. x 0.065 in.; Z11 0.165 in. x 0.065 in.; Z12 0.555 in. x 0.065 in.; Z13 0.185 in. x 0.030 in.; Z14 0.845 in. x 0.050 in. (R) ? ATC B case chip capacitors: C1, C2, 10 pF, 100B100JCA500X; C7, C11, 8.2 pF, 100B8R2CA500X. (R) ? Sprague tantalum SMT: C9, C10, C15 22 F, 35 V. (R) ? Kemet : B case chip capacitors: C3, C14 0.10 F, CDR33BX104AKWS; tantalum capacitor: C16, 1 F, 50 V T491C. (R) ? Vitramon 1206: C5, C12: 22000 pF. (R) ? Murata : 0805: C4, C13 0.01 F, GRM40X7R103K100AL. ? 0603: C12 220 pF. (R) ? Johanson Giga-Trim variable capacitors: C8, C18 0.4 pF--2.5 pF. ? Fixed film chip resistors (0.25 W, 0.08 x 0.13): R2 4.7 ; R3 1.02 k; R4 560 k. (R) ? Fair-Rite ferrite bead: FB1: 2743019447. (R) ? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
Figure 2. AGR19090E Test Circuit
AG R190 90E 90 W, 1930 MHz --1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
0.0 > WA VELE 0.49 N GTH S TOW A RD 0.48 0.0 D < 0.49 RD LOA TOW A 0.48 7 180 TH S 0.4 170 NG -170 EL E V WA < -90 90 -160
U CT
0.6
Z0 = 10
IN D
0.2
0.4
0.8
0.9
1.0
1.2
1.4
1.8
2.0
3.0
4.0
0.1
0.3
0.5
0.6
0.7
1.6
5.0
10
20
0.1
) / Yo (-jB CE
0.6
-85
AN PT CE US ES
1. 0
0.2
-80
6 0.4 4 0.0
IV CT
0
IN
DU
0.3
-15
-75
R
,O o)
5
0.0
5 0.4
-70
06
0.
0 -65 .5
0.6
-60
1.6
0.7
1.4
0.8
0.9
1.0
1.2
-5
5
0
-5
5
-4
MHz (f) 1930 (f1) 1960 (f2) 1990 (f3)
Note:
ZS (Complex Source Impedance) 2.16 - j2.62 2.44 - j2.57 2.49 - j2.76
ZL (Complex Optimum Load Impedance) 2.51 - j0.83 2.50 - j0.82 2.38 - j0.80
ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
GATE (2) ZS
DRAIN (1) ZL SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
0.
32
0.
1.8
18
0 -5 -25
4 .4
0
3 0.3 7 0.1
2.
0
-30
-60
0.3
0.1
4
6
-
35
-70
0.35
0.15
0.36
0.14 -80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11 -100
0.39
CA P AC I TI
0.1
0.4
-110
VE
RE AC TA N
0.0
0.4 1
9
-12
CE CO M
0
0.0
PO N
0.4
8
2
EN
T
(-j
-1
0.
40
4
Z X/
5.0
-15
4.0
-20
3.
0
1.
0
ZS
-10
f3
f1
0.
8
10
ZL
0.4
20
f3
f1
0.2
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
0.8
0.
-30
0.2 0.3
-4 0
8
0.6
0.4
10
0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES
L E OF ANG
0.2
-1
0. 07 30
0.
43
0.1
20
50
-20
0.2 2
0.2 8
0.2 9 0.2 1
0. 19 0. 31
AGR 19090 E 90 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
55 54 53 52 51 POUT (dBm)Z 50 49 48 47 46 45 44 43 30 31 32 33 34 35 36 37 38 39 40 41 42 POUT GPS 16 P3dB = 51.60 dBm (144.53 W) P1dB = 50.81 dBm (120.66 W) 15 14 13 12 GPS (dB)Z 11 10 9 8 7 6 5 4
PIN (dBm)Z
Test Conditions: VDD = 28 Vdc, IDQ = 800 mA, pulsed CW, 4 s (on), 40 s (off), center frequency = 1960 MHz.
Figure 4. Pulse CW POUT vs. PIN
50 45 40 -25
?
-30 885 kHz 2.25 MHz 1 MHz -35 -40 ACPR (dBc)Z -45 -50 -55 -60
? (%)Z
GPS (dB),
35 30 25 20 15 10 5 0 1 10 POUT (W) Avg.Z GPS
-65 -70 -75 100
Test Conditions: VDD = 28 Vdc, IDQ = 850 mA, f = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz).
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. POUT
AG R190 90E 90 W, 1930 MHz --1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
60 55 50 45 40 35 30 25 20 15 10 5 0 -10 IM3 -20
? (%)
?
ACP GPS
-30 -40 -50 -60 -70 100
1
10 POUT (W)
Test Conditions: VDD = 28 Vdc, IDQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. POUT
17 16 GPS (dB)Z 15 14 13 12 IDQ = 1100 mA IDQ = 850 mA IDQ = 650 mA IDQ = 450 mA
IDQ = 1300 mA
1
10 POUT (W)
IM3 (dBc), ACPR (dBc) 100
Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
GPS (dB),
Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT
AGR 19090 E 90 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
-30 -35 -40 ACPR (dBc)Z -45 -50 -55 -60 -65 -70 1 IDQ = 850 mA 10 100 IDQ = 650 mA IDQ = 450 mA
IDQ =1300 mA IDQ = 1100 mA
POUT (W)
Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 8. ACPR vs. POUT
-15 -20 -25 IM3 (dBc)Z -30 -35 -40 -45 -50 -55 1 IDQ = 450 mA IDQ = 650 mA
IDQ =1300 mA IDQ = 1100 mA 10 100
IDQ = 850 mA
POUT (W)Z
Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 9. IM3 vs. POUT
AG R190 90E 90 W, 1930 MHz --1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
50 45 -40 -50 -55 -60 400 kHz 600 kHz GPS EVM 0 10 20 30 40 50 60 70 -65 -70 -75 -80 -85 -90 SPECTRAL REGROWTH (dBc) SPECTRAL REGROWTH (dBc)Z -45
? (%), EVM (%) Z
40 35 30 25 20 15 10 5 0
?
GPS (dB),
POUT (W) Avg.Z
Test Conditions: VDD = 28 Vdc, IDQ = 800 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
50 45 -40 -45
? (%), EVM (%) Z
40 35 30 25 20 15 10 5 0 0 10 EVM 20
?
400 kHz 600 kHz GPS
-50 -55 -60 -65 -70 -75 -80 -85 -90
GPS (dB),
30
40
50
60
70
POUT (W) Avg.Z
Test Conditions: VDD = 26 Vdc, IDQ = 800 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
AGR 19090 E 90 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are 0.005 in. unless specified.
AGR19090EU
PINS: 1. DRAIN 2. GATE 3. SOURCE
1 PEAK DEVICES AGR19090EU XXXX 2 3
1
3 2
AGR19090EF
PINS: 1. DRAIN 2. GATE 3. SOURCE
1 PEAK DEVICES AGR19090EF 3
1 3 2
XXXX
2
XXXX - 4 Digit Trace Code

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AGR19090EF 974-AGR19090EF	Advanced Semiconductor Inc	RF MOSFET Transistors 1.93-1.99GHz 36Watt Gain 15dB	1: USD76.43 10: USD64.96 50: USD62.71 100: USD60.39	0

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