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SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0245-HF (RoHS Device) Io = 200 mA VR = 45 Volts Features Halogen free. Designed for mounting on small surface. Extremely thin/leadless package. Low leakage current (IR=0.1uA typ.@VR=10V). Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. 0.014(0.35) Typ. 0.033(0.85) 0.027(0.70) 0.012 (0.30) Typ. Marking code: cathode band & B6 Mounting position: Any Weight: 0.003 gram(approx.). 0.028(0.70) Typ. Dimensions in inches and (millimeter) Maximum Rating (at TA=25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit VRRM VR IO 50 45 200 V V mA 8.3ms single half sine-wave superimposed on rate load(JEDEC method) IFSM PD TSTG Tj -40 -40 2000 150 +125 +125 mA mW O C C O Electrical Characteristics (at TA=25 C unless otherwise noted) O Parameter Forward voltage Reverse current Capacitance between terminals VR = 10 V Conditions IF = 200 mA DC Symbol Min Typ Max Unit VF IR CT 9 0.55 1 V uA PF f = 1 MHZ, and 10VDC reverse voltage REV:A QW-G1068 Page 1 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBU0245-HF) Fig. 1 - Forward characteristics 1000 10m 1m Fig. 2 - Reverse characteristics 125 C Forward current (mA ) Reverse current ( A ) 100 100u 10u 1u 100n 10 75 C 1 0.1 125 C 75 C 25 C 25 C C 0.01 -25 -25 C 10n 1n 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 10 20 30 40 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Capacitance between terminals (pF) 100 Fig. 4 - Current derating curve f = 1 MHz Ta = 25 C Average forward current ( % ) Mounting on glass epoxy PCBs 100 80 10 60 40 20 1 0 5 10 15 0 20 25 30 35 0 25 50 75 100 125 150 Reverse voltage (V) Ambient temperature ( C ) REV:A QW-G1068 Page 2 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B Polarity W C P A 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 1.00 0.10 0.039 0.004 B 1.85 0.10 0.073 0.004 C 1.00 0.10 0.039 0.004 d 1.55 0.05 0.061 0.002 D 178 1 7.008 0.04 D1 60.0 MIN. 2.362 MIN. D2 13.0 0.20 0.512 0.008 U/0603 (mm) (inch) SYMBOL E 1.75 0.10 0.069 0.004 F 3.50 0.05 0.138 0.002 P 4.00 0.10 0.157 0.004 P0 4.00 0.10 0.157 0.004 P1 2.00 0.05 0.079 0.004 T 0.23 0.05 0.009 0.002 W 8.00 0.20 0.315 0.008 W1 13.5 MAX. 0.531 MAX. U/0603 (mm) (inch) REV:A QW-G1068 Page 3 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Marking Code Park Number CDBU0245-HF Marking Code B6 B6 Suggested PAD Layout U/0603 SIZE (mm) A B C D E 1.70 0.60 0.80 2.30 1.10 (inch) 0.067 0.024 0.031 C D A E 0.091 B 0.043 Standard Package Qty per Reel Case Type (Pcs) U/0603 4000 Reel Size (inch) 7 REV:A QW-G1068 Page 4 Comchip Technology CO., LTD. |
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