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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAW62 High-speed diode
Product data sheet Supersedes data of April 1996 1996 Sep 17
NXP Semiconductors
Product data sheet
High-speed diode
FEATURES * Hermetically sealed leaded glass SOD27 (DO-35) package * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 75 V * Repetitive peak forward current: max. 450 mA.
The diode is type branded.
handbook, halfpage k
BAW62
DESCRIPTION The BAW62 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
a
MAM246
APPLICATIONS * High-speed switching * Fast logic applications. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 4 1 0.5 350 +200 200 A A A mW C C see Fig.2; note 1 CONDITIONS MIN. - - - - MAX. 75 75 250 450 V V mA mA UNIT Fig.1 Simplified outline (SOD27; DO-35) and symbol.
1996 Sep 17
2
NXP Semiconductors
Product data sheet
High-speed diode
ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 5 mA IF = 100 mA IF = 100 mA; Tj = 100 C IR reverse current see Fig.5 VR = 20 V VR = 50 V VR = 75 V VR = 20 V; Tj = 150 C VR = 75 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 50 mA; tr = 20 ns; see Fig.8 - - - - - - - 25 200 5 50 100 2 4 620 - - 750 1 000 930 CONDITIONS MIN.
BAW62
MAX.
UNIT mV mV mV nA nA A A A pF ns
Vfr
forward recovery voltage
-
2.5
V
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 500 UNIT K/W K/W
1996 Sep 17
3
NXP Semiconductors
Product data sheet
High-speed diode
GRAPHICAL DATA
BAW62
handbook, halfpage
300
MBG448
handbook, halfpage
600
MBG464
IF (mA) 200
IF (mA) 400
(1) (2) (3)
100
200
0 0 100 Tamb (oC) 200
0 0
(1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values.
1
VF (V)
2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 10
102
103
tp (s)
104
Based on square wave currents. Tj = 25 C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 17
4
NXP Semiconductors
Product data sheet
High-speed diode
BAW62
103 handbook, halfpage IR (A)
MGD006
MGD004
handbook, halfpage
1.2
102
Cd (pF) 1.0
(1) (2) (3)
10
0.8
1
10-1
0.6
10-2 0 100 Tj (oC) 200
0.4 0 10 VR (V) 20
(1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values.
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1996 Sep 17
5
NXP Semiconductors
Product data sheet
High-speed diode
BAW62
handbook, full pagewidth
tr
tp t
D.U.T.
RS = 50 V = VR I F x R S
10% SAMPLING OSCILLOSCOPE IF t rr t
IF
R i = 50
VR 90% (1)
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 k
450
I 90%
V
R = 50 S
D.U.T.
OSCILLOSCOPE R i = 50 10%
MGA882
V fr
t tr tp
t
input signal
output signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 17
6
NXP Semiconductors
Product data sheet
High-speed diode
PACKAGE OUTLINE
BAW62
0.56 max 1.85 max 25.4 min 4.25 max 25.4 min
mla428 - 1
Dimensions in mm.
Fig.9 SOD27 (DO-35).
1996 Sep 17
7
NXP Semiconductors
Product data sheet
High-speed diode
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
BAW62
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
1996 Sep 17
8
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 1996 Sep 17

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