 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 m (P-Ch) -2.8 A, -30 V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen and lead-free DESCRIPTION The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits where high-side switching, low in-line power loss and resistance to transients are needed. FEATURES N-Channel 30V/2.8A, RDS(ON) = 68m@VGS = 10 V 30V/2.3A, RDS(ON) = 78m@VGS = 4.5 V 30V/1.5A, RDS(ON) = 108m@VGS = 2.5 V P-Channel -30V/-2.8A, RDS(ON) = 105m@VGS = 10 V -30V/-2.5A, RDS(ON) = 120m@VGS = 4.5 V -30V/-1.5A, RDS(ON) = 150m@VGS = 2.5 V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design APPLICATIONS Battery powered systems Portable devices Power management in NB DC to DC converter, load switch, DSC, LCD display inverter PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0 10 0.30 0.50 0.95 Ref 1.90 Ref Week code: A~Z (1~26); a ~ z (27 ~ 52) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150) Pulsed Drain Current Power Dissipation Continuous Source Current (Diode Conduction) Thermal Resistance- Junction to Ambient T 10 sec Steady State Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 PD @TA=70 IS RJA Tj, Tstg Ratings N-Channel P-Channel Unit V V A A W A /W 30 12 2.8 2.3 10 1.15 0.75 -30 12 -2.8 -2.1 -8 Operating Junction and Storage Temperature Range 1.25 -1.4 50 52 90 90 -55 ~ +150 01-June-2007 Rev. C Page 1 of 6 STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 m (P-Ch) -2.8 A, -30 V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Zero Gate Voltage Drain Current P-Ch (Tj=25) Symbol BVDSS VGS(th) gfs IGSS Min. 30 -30 0.8 -0.4 - Typ. - Max. 1.6 -1.0 Unit V Test Conditions VGS=0, ID=250uA VGS=0, ID=-250uA VDS=VGS, ID=250uA VDS=VGS, ID=-250uA VDS=4.5V, ID=-6.0A VDS=-10V, ID=-2.8A VDS= 0 V, VGS=12 V VDS= 0 V, VGS=12 V VDS=24 V, VGS=0 V VDS=-24V, VGS=0 V VDS=24V, VGS=0 V, TJ=55 VDS=-24V, VGS=0 V, TJ=55 VDS 5V, VGS=10 V VDS -5V, VGS= -10 V VGS=10V, ID=2.8A VGS=-10V, ID=-2.8A VGS=4.5V, ID=2.3A VGS=-4.5V, ID=-2.5A VGS=2.5V, ID=1.5A VGS=-2.5V, ID=-1.5A V Forward Transconductance 4.6 4 0.048 0.077 0.054 0.092 0.079 0.118 4.2 5.8 0.6 0.8 1.5 1.5 2.5 6 2.5 3.9 20 40 4 15 100 100 1 -1 10 -10 0.068 0.105 0.078 0.120 0.108 0.150 6 - S Gate Leakage Current nA N-Ch P-Ch IDSS - uA On-State Drain Current N-Ch P-Ch N-Ch P-Ch ID(on) 6 -6 - A Drain-Source On-Resistance N-Ch P-Ch N-Ch P-Ch RDS(ON) - Total Gate Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Qg Qgs Qgd Td(on) Tr Td(off) Tf - Gate-Source Charge nC N-Channel VDS=15V, VGS=4.5V , ID=2.0A P-Channel VDS=-15V, VGS=-4.5V ,ID=-2.0A Gate-Drain Charge Turn-on Time P-Ch N-Ch P-Ch N-Ch ns Turn-off Time P-Ch N-Ch P-Ch N-Channel VDD=15V RL=10 VGEN=10V RG=3 P-Channel VDD=-15V RL=15 VGEN=-10V RG=3 01-June-2007 Rev. C Page 2 of 6 STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 m (P-Ch) -2.8 A, -30 V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (N-Channel) 01-June-2007 Rev. C Page 3 of 6 STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 m (P-Ch) -2.8 A, -30 V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET 01-June-2007 Rev. C Page 4 of 6 STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 m (P-Ch) -2.8 A, -30 V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (N-Channel) 01-June-2007 Rev. C Page 5 of 6 STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 m (P-Ch) -2.8 A, -30 V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET 01-June-2007 Rev. C Page 6 of 6 |
Price & Availability of STT6601
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |