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| NTD4913N Power MOSFET Features 30 V, 32 A, Single N-Channel, DPAK/IPAK * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS 30 V http://onsemi.com RDS(ON) MAX 10.5 mW @ 10 V 15 mW @ 4.5 V D ID MAX 32 A Applications * CPU Power Delivery * DC-DC Converters MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25C TA = 100C TA = 25C TA = 25C TA = 100C TA = 25C TC = 25C TC = 100C TC = 25C TA = 25C TA = 25C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 20 10.5 7.4 2.5 7.7 5.4 1.36 32 23 24 132 60 -55 to +175 20 8.0 22 W A A C A V/ns mJ W A W A Unit V V A G S N-CHANNEL MOSFET 4 4 12 1 4 3 CASE 369AA DPAK (Bent Lead) STYLE 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 23 1 2 Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 49 13NG 4 Drain YWW 49 13NG 4 Drain YWW 49 13NG Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = 21 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. 2 1 23 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4913N G = Year = Work Week = Device Code = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. (c) Semiconductor Components Industries, LLC, 2009 June, 2009 - Rev. 0 1 Publication Order Number: NTD4913N/D NTD4913N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Case (Drain) Junction-to-TAB (Drain) Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - Steady State (Note 4) 3. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 4. Surface-mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJC-TAB RqJA RqJA Value 6.2 4.3 59 110 C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V VGS = 4.5 V Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 10 21 14.7 2.3 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1.0 MHz, VDS = 15 V 1013 370 12.5 6.2 1.7 3.7 0.9 13 nC nC pF gFS ID = 30 A ID = 15 A ID = 30 A ID = 15 A VDS = 1.5 V, ID = 30 A VGS = 0 V, VDS = 24 V TJ = 25 C TJ = 125C VGS = 0 V, ID = 250 mA 30 15 1 10 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VDS = 0 V, VGS = 20 V VGS = VDS, ID = 250 mA 1.0 1.67 4.0 8.2 8.2 12.5 12.5 39 2.2 V mV/C 10.5 mW 15 S 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils. http://onsemi.com 2 NTD4913N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR ta tb QRR LS LD LD LG RG TA = 25C VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A VGS = 0 V, IS = 30 A TJ = 25C TJ = 125C 0.92 0.70 26 14 12 15 nC ns 1.1 V td(ON) tr td(OFF) tf VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 7.1 18 19 1.7 ns Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance (Note 7) Drain Inductance, DPAK Drain Inductance, IPAK (Note 7) Gate Inductance (Note 7) Gate Resistance 2.99 0.0164 1.88 4.9 1.0 2.0 nH W 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils. ORDERING INFORMATION Device NTD4913NT4G NTD4913N-1G NTD4913N-35G Package DPAK (Pb-Free) DPAK-3 (Pb-Free) IPAK Trimmed Lead (3.5 " 0.15 mm) (Pb-Free) Shipping 2500 / Tape & Reel 75 Units / Rail 75 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NTD4913N TYPICAL CHARACTERISTICS 55 50 ID, DRAIN CURRENT (A) 45 40 35 30 25 20 15 10 5 0 3.0 V 2.8 V 2.6 V 2.4 V 0 1 2 3 4 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 10 V 7V 5.0 4.5 4.0 V ID, DRAIN CURRENT (A) VGS = 3.8 V 3.6 V TJ = 25C 3.4 V 3.2 V 55 50 45 40 35 30 25 20 15 10 5 0 TJ = 25C TJ = 125C TJ = -55C 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE-TO-SOURCE VOLTAGE (V) VDS = 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.026 0.024 0.022 0.020 0.018 0.016 0.014 0.012 0.010 0.008 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 ID = 30 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 Figure 2. Transfer Characteristics TJ = 25C VGS = 4.5 V VGS = 10 V 15 20 25 30 35 40 45 50 VGS (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. VGS 2.2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 10 ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10,000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C TJ = 125C 100 TJ = 85C 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NTD4913N TYPICAL CHARACTERISTICS 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 Crss 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Coss Ciss VGS = 0 V TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (V) 15.0 13.5 12.0 10.5 9.0 7.5 6.0 4.5 3.0 1.5 0 Qgs Qgd VDD = 15 V VGS = 10 V ID = 30 A 3 4 5 6 7 8 9 10 11 12 13 14 15 TJ = 25C QT 0 1 2 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) VDD = 15 V ID = 15 A VGS = 10 V t, TIME (ns) 100 td(off) tf tr 10 td(on) 30 25 20 15 10 5 0 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 125C 1 TJ = 25C 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) 1000 25 Figure 10. Diode Forward Voltage vs. Current ID = 21 A 20 15 10 5 0 ID, DRAIN CURRENT (A) 100 10 ms VGS = 10 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 ms 1 ms 10 ms dc 10 1 0.1 100 25 50 75 100 125 150 175 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTD4913N TYPICAL CHARACTERISTICS 100 10 R(t) (C/W) 1 0.1 0.01 0.001 Psi Tab-A 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) 0.1 1 10 100 1000 Duty Cycle = 50% 20% 10% 5% 2% 1% Single Pulse Figure 13. FET Thermal Response 45 40 35 30 GFS (S) 25 20 15 10 5 0 0 5 10 15 20 ID (A) 25 30 35 40 VDS = 1.5 V Figure 14. GFS vs. ID http://onsemi.com 6 NTD4913N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369AA-01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E S A 1 2 3 Z H U F L D 2 PL J DIM A B C D E F H J L R S U V Z 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTD4913N PACKAGE DIMENSIONS 3 IPAK, STRAIGHT LEAD CASE 369AC-01 ISSUE O NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE IS ON TOP OF DAMBAR POSITION. 4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE. DIM A B C D E F G H J K R V W INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.043 0.090 BSC 0.034 0.040 0.018 0.023 0.134 0.142 0.180 0.215 0.035 0.050 0.000 0.010 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.09 2.29 BSC 0.87 1.01 0.46 0.58 3.40 3.60 4.57 5.46 0.89 1.27 0.000 0.25 B V R C E A SEATING PLANE W F G K J D H 3 PL 0.13 (0.005) W IPAK (STRAIGHT LEAD DPAK) CASE 369D-01 ISSUE B B V R 4 C E Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- S -T- SEATING PLANE A 1 2 3 K F D G 3 PL J H M 0.13 (0.005) T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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