View APT54GA60B_4522363.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT54GA60B APT54GA60S
600V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO APT54GA60S -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT54GA60B when switching at high frequency. Single die IGBT
(R)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
1
Ratings
600 96 54 161 30 416 161A @ 600V -55 to 150 300
Unit
V
A
V W
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 32A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 250 2500 100
Unit
V
VGE =VCE , IC = 1mA
A nA
6 - 2009 052-6328 Rev D
VGS = 30V
Thermal and Mechanical Characteristics
Symbol
RJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
5.9
Max
.3 -
Unit
C/W g in*lbf
10
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 32A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 32A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 32A RG = 4.74 TJ = +125C 161 17 20 112 86 534 466 16 21 146 145 891 838
APT54GA60B_S
Min Typ
4130 350 45 158 26 52 A nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
ns
J
ns
J
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6328 Rev D 6 - 2009
Typical Performance Curves
100
V
GE
APT54GA60B_S
350 TJ= 25C 300 IC, COLLECTOR CURRENT (A) 250 200 8V 150 100 50 0 7V 6V 5V 04 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 32A C T = 25C
J
= 15V
IC, COLLECTOR CURRENT (A)
TJ= 55C 75
15V 13V
10V 9V
TJ= 125C TJ= 150C
50
25
0
0
2
4
6
8
200
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 GATE CHARGE (nC) FIGURE 4, Gate charge 160
IC, COLLECTOR CURRENT (A)
150
VCE = 120V VCE = 300V
100
VCE = 480V
50
TJ= 25C TJ= 125C TJ= -55C 6 8 10 12 14
0
0
2
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
4
3
IC = 64A IC = 32A
3
IC = 64A IC = 32A
2 IC = 16A 1
2
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 16A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
0
6
0
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
0
25
160 140 IC, DC COLLECTOR CURRENT (A) 120 100 80 6 - 2009 25 50 052-6328 Rev D 60 40 20 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
Typical Performance Curves
21 td(ON), TURN-ON DELAY TIME (ns) 20 19 VGE = 15V 18 17 16 15 14 200 td(OFF), TURN-OFF DELAY TIME (ns)
VCE = 400V TJ = 25C, or 125C RG = 4.7 L = 100H
APT54GA60B_S
160
VGE =15V,TJ=125C
120
80
VGE =15V,TJ=25C
40
VCE = 400V RG = 4.7 L = 100H
0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 RG = 4.7, L = 100H, VCE = 400V 60
0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200
0
160 50 tr, RISE TIME (ns) tr, FALL TIME (ns) 40 30 20 10 0
TJ = 25 or 125C,VGE = 15V TJ = 125C, VGE = 15V
120
80
TJ = 25C, VGE = 15V
40
RG = 4.7, L = 100H, VCE = 400V
0
10
20
30
40
50
60
70
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 2400 Eon2, TURN ON ENERGY LOSS (J) 2000 1600 1200 800 400 0
TJ = 25C
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R =4.7
G
0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2400 2000 1600 1200 800 400 0
TJ = 25C
V = 400V CE V = +15V GE R = 4.7
G
0
TJ = 125C
TJ = 125C
0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 6000 SWITCHING ENERGY LOSSES (J) 5000 4000 3000 2000 1000 0 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance 0
Eoff,32A Eoff,64A
V = 400V CE V = +15V GE T = 125C
J
0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 2400
V = 400V CE V = +15V GE R = 10
G
Eon2,64A
SWITCHING ENERGY LOSSES (J)
Eon2,64A
2000 1600 1200
Eoff,64A
052-6328 Rev D 6 - 2009
Eon2,32A
Eon2,32A Eon2,16A Eoff,16A
800 400 0
Eoff,32A Eon2,16A Eoff,16A
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10000 Cies IC, COLLECTOR CURRENT (A) 100 C, CAPACITANCE (pF) 500
APT54GA60B_S
1000
10
Coes 100
1
Cres 10 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.35 ZJC, THERMAL IMPEDANCE (C/W) 0.30 0.25 0.7 0.20 0.5 0.15 0.10 0.05 0 10
-5
D = 0.9
Note:
PDM
0.3 0.1 0.05 10
-4
t1 t2
SINGLE PULSE 10 -3 10 -2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10 -1
1.0
RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
052-6328 Rev D
6 - 2009
APT54GA60B_S
10% Gate Voltage td(on) 90% TJ = 125C
APT30DQ60
tr
V CC IC V CE
Collector Current 5% Collector Voltage
5%
10%
A D.U.T.
Switching Energy
Figure 12, Inductive Switching Test Circuit
Figure 13, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 14, Turn-off Switching Waveforms and Definitions
TO-247 (B) Package Outline
e3 100% Sn Plated
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D3PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
Collector
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
052-6328 Rev D 6 - 2009
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Collector
Gate Collector
and Leads are Plated
Emitter
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
Emitter Collector
Dimensions in Millimeters and (Inches)
Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

▲Up To Search▲

Price & Availability of APT54GA60B

	To Download APT54GA60B Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .