 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD788 DESCRIPTION *DC Current Gain: hFE= 40~250(Min)@ IC= -0.2A *Collector-Emitter Sustaining Voltage : VCEO(SUS)= -60V(Min) *Complement to type BD787 APPLICATIONS *Designed for low power audio amplifier and low current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE -80 UNIT V Collector Current-Continuous Collector Current-Peak w w scs .i w -60 -6 -4 -8 -1 15 150 -65~150 V V .cn mi e A A A Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range PC TJ Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 8.34 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BD788 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -0.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.6 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -0.8 V VCE(sat)-4 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.8A B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= 0.2A B VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain ww w scs .i B IC= -2A; VCE= -3V VCB= -80V;VBE(off)= -1.5V VCB= -40V;VBE(off)= -1.5V;TC=125 VCE= -30V; IB= 0 .cn mi e 40 25 -2.0 V -1.8 -1.0 -0.1 -0.1 V A mA mA A VEB= -6V; IC= 0 -1.0 IC= -0.2A; VCE= -3V 250 hFE-2 DC Current Gain IC= -1A; VCE= -3V hFE-3 DC Current Gain IC= -2A; VCE= -3V 20 hFE-4 DC Current Gain IC= -4A; VCE= -3V 5 fT Current-Gain--Bandwidth Product IC= -0.1A; VCE= -10V 50 MHz COB Collector Output Capacitance IE= 0; VCB= -10V; f= 0.1MHz 70 pF isc Websitewww.iscsemi.cn 2 |
Price & Availability of BD788
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |