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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1413 DESCRIPTION *With TO-220Fa package *High DC current gain *Low saturation voltage *Complement to type 2SB1023 *DARLINGTON APPLICATIONS *Power amplifier and switching applications *Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60 40 5 3 0.5 20 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1413 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=25mA; IB=0 IC=2A ;IB=4mA IC=2A ;IB=4mA VCB=60V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V 2000 1000 MIN 40 1.5 2.0 20 2.5 TYP. MAX UNIT V V V A mA Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC=30V ,RL=10 0.1 1.0 0.2 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1413 Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm) 3 |
Price & Availability of 2SD1413
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