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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5068 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *High Reliability APPLICATIONS *Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature 30 A PC 150 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN KSD5068 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 6A ; VCE= 5V IC= 6A , IB1= 1.2A ; IB2= -2.4A RL= 33.3; VCC= 200V 5 tf Fall Time 0.3 s isc Websitewww.iscsemi.cn 2 |
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